Wafer processing method and system using multi-zone chuck

A wafer processing method, comprising:

• measuring warpage of a wafer,
• measuring a thickness of a dielectric layer on a back side of the wafer,
• supporting the back side of the wafer on a multi-zone electrostatic chuck having a plurality of zones with controllable clamping forces,
• securing the wafer to the multi-zone chuck by controlling the clamping forces in the corresponding zones in accordance with measured values of the warpage and the thickness of the dielectric layer in said zones.

A wafer processing system, comprising:

• at least one metrology chamber configured to measure a first property on a back side of a wafer;
• a process chamber configured to perform a treatment on a front side of the wafer, the process chamber including therein a multi-zone chuck, said multi-zone chuck configured to support a back side of the wafer, the back side opposite the front side, said multi-zone chuck having a plurality of zones with controllable clamping forces, and
• a controller coupled to the metrology chamber and the multi-zone chuck, said controller configured to
• collect measured values of the first property in said zones, and
• control the clamping forces in the corresponding zones in accordance with the measured values of the first property in said zones, thereby securing the wafer to the multi-zone chuck.