Hybrid multi-level cell programming sequences
AssigneeSanDisk Technologies LLC
InventorsSteven Sprouse, Chris Avila, Sergey Anatolievich Gorobets
Life of this patent
Estimating the term…
Loading patent…
AssigneeSanDisk Technologies LLC
InventorsSteven Sprouse, Chris Avila, Sergey Anatolievich Gorobets
Estimating the term…
A memory device implements hybrid programming sequences for writing data to multiple level cells (MLCs). The memory device obtains specified data to write to the MLC and selects among multiple different programming techniques to write the specified data. Each of the programming techniques establishes a charge configuration in the MLC that represents multiple data bits. The memory device writes the specified data to the MLC using the selected programming technique. In one implementation, the programming techniques include a robust programming technique that preserves previously written data in the MLC in the event of a write abort of the specified data and an additional programming technique that has higher average performance than the robust programming technique. The selection may be made based on a wide variety of criteria, including whether data has been previously written to a block that includes the MLC.
A method for writing data to a multiple level cell (MLC) in a memory device, the method comprising, in the memory device:
A memory device comprising:
A memory device comprising:
Dependencies are inferred from the claim text.