Drive Method for Memory Element and Storage Device Using Memory Element

A storage device, comprising:

• a memory element comprising an insulating substrate;
• a first electrode and a second electrode provided on the insulating substrate;
• and an inter-electrode gap portion provided between the first electrode and the second electrode and having a gap of an order of nanometers where a phenomenon of a change in resistance value between the first and second electrodes occurs;
• and
• a current pulse generating unit that generates a current pulse for performing a shift from a high-resistance state to a low-resistance state, wherein
• the current pulse generating unit applies the current pulse to the memory element by a constant current circuit.

A storage device, comprising:

• a memory element comprising an insulating substrate, a first electrode and a second electrode provided on the insulating substrate, and an inter-electrode gap portion provided between the first electrode and the second electrode and having a gap of an order of nanometers where a phenomenon of a change in resistance value between the first and second electrodes occurs;
• and
• a voltage pulse generating unit, wherein
• there are a plurality of memory elements, and at least a constant current element is series-connected to each of the memory elements, and a voltage pulse is applied from the voltage pulse generating unit to at least one memory element to which the constant current element is series-connected.