Variable resistance memory device
AssigneeSK hynix Inc.
InventorJae-Yun YI
Life of this patent
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Abstract
A variable resistance memory device includes: first and second structures that each include a first electrode, a second electrode, and a variable resistance material layer interposed between the first and second electrodes and configured to switch between different resistance states depending on a voltage applied across the variable resistance material layer; and a material layer interposed between the first and second structures and configured to pass a bidirectional current according to a voltage applied across the material layer. The first and second structures are symmetrical with respect to the material layer.
Claims14
A variable resistance memory device comprising:
- first and second structures that each comprise a first electrode, a second electrode, and a variable resistance material layer interposed between the first and second electrodes and configured to switch between different resistance states depending on a voltage applied across the variable resistance material layer;
- and
- a material layer interposed between the first and second structures and configured to pass a bidirectional current according to a voltage applied across the material layer,
- wherein the first and second structures are symmetrical with respect to the material layer.
A variable resistance memory device comprising:
- a plurality of first conductive lines;
- a plurality of second conductive lines crossing the first conductive lines;
- and
- a plurality of cells arranged at intersections between the first conductive lines and the second conductive lines,
- wherein each of the cells comprises:
- a material layer configured to pass a bidirectional current according to a voltage applied across the material layer;
- and
- first and second structures that each comprise a first electrode and a variable resistance material layer, wherein the first and second structures are formed symmetrically with respect to the material layer.
Dependencies are inferred from the claim text.