# US 2013/0158698 A1 · Fabrication system of cigs thin film solar cell equipped with real-time analysis facilities for profiling the elemental components of cigs thin film using laser-induced breakdown spectroscopy

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- Number: US 2013/0158698 A1
- Document ID: US20130158698A1
- Status: Published application
- Kind: A1
- Application number: 13/326,247
- Filed: 2011-12-14
- Published: 2013-06-20
- Earliest claimed: 2011-12-14
- Assignees: Gwangju Institute of Science and Technology
- Inventors: Sungho JEONG; Seokhee LEE; Hee-Sang SHIM
- Web page: https://patentgrep.com/patent/US20130158698A1

## CPC

- H10F 77/1694: {the films including Group I-III-VI materials, e.g. CIS or CIGS}
- G01N 21/718: {Laser microanalysis, i.e. with formation of sample plasma}
- H10F 19/33: Patterning processes to connect the photovoltaic cells, e.g. laser cutting of conductive or active layers
- H10F 77/126: {comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]}
- Y02E 10/541: CuInSe2 material PV cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

The present invention relatives to a fabrication processing system of CIGS thin film solar cell, more particularly to a fabrication processing system CIGS of thin film solar cell equipped with real-time analysis facilities for profiling the elemental components of CIGS thin film using laser-induced breakdown spectroscopy. The system of the present invention is to provide a process control system for determining whether abnormalities are present or not by measuring a physical and chemical properties on a continuous production process lines of CIGS thin film solar cell in real time, and performing a production and quality management at the same time by providing a feedback to CIGS fabrication process.

## Claims

### Claim 1

A copper indium gallium selenide (CIGS) thin film solar cell fabrication process system comprising:
an object transfer section to continuously transfer a process object for fabrication of CIGS thin film solar cells;
a thin film fabrication process section to perform a CIGS thin film fabrication process on the process object during transfer;
at least one header including at least one laser irradiation sectional to radiate a laser beam to CIGS thin film manufactured by the thin film fabrication process section, at least one spectroscopy detection optical section to detect the spectroscopy from a plasma generated CIGS thin film by the irradiated laser beam, and a beam irradiation positioning section to adjust an irradiation position of the laser beam; wherein the header is located above the CIGS thin film;
a header transfer section combined with a transfer path of the object and moving the header in the same speed and direction as a moving speed and a moving direction of the CIGS thin film manufactured by the thin film fabrication process section;
a spectroscopy information storage section in which a spectroscopy state information is stored;
a spectroscopy analyzing section connected electrically to the spectroscopy detection optical section to analyze a material distribution state within the CIGS thin film from the spectroscopy detected by the spectroscopy detection optical section based on the information stored in the spectroscopy information storage section;
a process control section connected to the spectroscopy analyzing section to control the thin film fabrication process section based on the material distribution state within the CIGS thin film analyzed by the spectroscopy analyzing section; and
a scribing section to pattern the CIGS thin film manufactured by the thin film fabrication process section.

### Claim 2 (depends on 1)

The CIGS thin film solar cell fabrication process system of claim 1, wherein the laser irradiation section includes a laser section and an auto-focus section.

### Claim 3

(canceled)

### Claim 4 (depends on 1)

The CIGS thin film solar cell fabrication process system of claim 1, wherein the CIGS thin film fabrication process is CIGS deposition process.

### Claim at position 5

5-7. (canceled)

### Claim 8 (depends on 1)

The CIGS thin film solar cell fabrication process system of claim 1, wherein the beam irradiation positioning section is a galvanometer.

### Claim 9

(canceled)

### Claim 10 (depends on 1)

The CIGS thin film solar cell fabrication process system of claim 1, further comprising an index recognition optical section recognizing an index to trace a position that the laser beam is radiated.

### Claim 11

(canceled)

### Claim 12 (depends on 1)

The CIGS thin film solar cell fabrication process system of claim 1, wherein the scribing comprises a second scribing process.

### Claim 13

(canceled)

### Claim 14 (depends on 1)

The CIGS thin film solar cell fabrication process system of claim 1, wherein the control modifies a rate and distribution value of an element including CIGS thin film provide a feedback on the thin film fabrication process section.

### Claim 15

(canceled)

### Claim 16

A copper indium gallium selenide (CIGS) thin film solar cell fabrication process system comprising:
an object transfer section to continuously transfer a process object for fabrication of CIGS thin film solar cells;
a thin film fabrication process section to perform a CIGS thin film fabrication process on the process object during transfer;
at least one header including a laser irradiation section for at least one scribing to radiate a laser beam to pattern CIGS thin film manufactured by the thin film fabrication process, at least a spectroscopy detection optical section to detect a spectroscopy from plasma generated from the CIGS thin film by the radiated laser beam, and a beam irradiation positioning section to adjust an irradiation position of the laser beam; wherein the header is located above the CIGS thin film;
a header transfer section combined with a transfer path of the object and moving the header in the same speed and direction as a moving speed and a moving direction of the CIGS thin film manufactured by the thin film structure process section;
a spectroscopy information storage section in which a spectroscopy state information is stored;
a spectroscopy analyzing section to analyze a material distribution state within the CIGS thin film from the spectroscopy detected by the spectroscopy detection optical section based on the information stored in the spectroscopy information storage section; and
a process control section to control the thin film fabrication process section based on the material distribution state within the CIGS thin film analyzed by the spectroscopy analyzing section.

### Claim 17 (depends on 16)

The CIGS thin film solar cell fabrication process system of claim 16, wherein the CIGS thin film fabrication process is CIGS deposition process.

### Claim 18

(canceled)

### Claim 19 (depends on 16)

The CIGS thin film solar cell fabrication process system of claim 16, wherein the beam irradiation positioning section is a galvanometer.

### Claim 20 (depends on 16)

The CIGS thin film solar cell fabrication process system of claim 16, further comprising an index recognition optical section recognizing an index to trace a position that the laser beam is radiated.

### Claim 21 (depends on 16)

The CIGS thin film solar cell fabrication process system of claim 16, wherein the scribing comprises a second scribing process.

### Claim 22 (depends on 16)

The CIGS thin film solar cell fabrication process system of claim 16, wherein the control modifies a rate and distribution value of an element including CIGS thin film provide a feedback on the thin film fabrication process section.