# US 2013/0157467 A1 · Method for forming semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2013/0157467 A1 - Document ID: US20130157467A1 - Status: Published application - Kind: A1 - Application number: 13/327,947 - Filed: 2011-12-16 - Published: 2013-06-20 - Earliest claimed: 2011-12-16 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd. - Inventors: Jen-Yi CHEN; Kun-Ei CHEN; Ling-Sung WANG; Chen-Chieh CHANG - Web page: https://patentgrep.com/patent/US20130157467A1 ## CPC - H10W 20/081: {by forming openings in the dielectric parts} - H10P 50/73: {using masks for insulating materials} - H10P 76/20: of masks comprising organic materials - H10P 95/00: Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass - H10W 20/096: {by contacting with gases, liquids or plasmas} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A method of patterning a material layer of a semiconductor device is disclosed, the method including treating a material layer above a semiconductor substrate with plasma oxygen; depositing a layer of photoresist over a first surface of the material layer after the treating of the material layer; patterning the layer of photoresist, thereby forming a patterned photoresist, exposing portions of the material layer; etching the exposed portions of at least the material layer to form at least one contact via in the material layer extending to a source or drain region of a device at a surface of the substrate; and removing the patterned photoresist from the first surface of the material layer. ## Claims ### Claim 1 A method comprising: (a) treating a material layer above a semiconductor substrate with plasma oxygen; (b) depositing a layer of photoresist over a first surface of the material layer after the treating of the material layer; (c) patterning the layer of photoresist, thereby forming a patterned photoresist and exposing portions of the material layer; (d) etching the exposed portions of at least the material layer to form at least one contact via in the material layer extending to a source or drain region or gate electrode of a device at a surface of the substrate; and (e) removing the patterned photoresist from the first surface of the material layer. ### Claim 2 (depends on 1) The method according to claim 1, wherein the material layer comprises an SiN film. ### Claim 3 (depends on 1) The method according to claim 1, wherein an etch stop layer is disposed beneath the material layer, and a bottom surface of the at least one contact via extends at least to a top surface of the etch stop layer. ### Claim 4 (depends on 2) The method according to claim 2, wherein treating the material layer provides for oxidation of the SiN film. ### Claim 5 (depends on 1) The method according to claim 1, wherein the material layer comprises a dielectric material having a dielectric constant of about 3.5 or less. ### Claim 6 (depends on 3) The method according to claim 3, wherein the etch stop layer emits a contaminant while etching the exposed portions of at least the material layer, and wherein treating the first surface of the material layer results in oxidation of the first surface. ### Claim 7 (depends on 6) The method according to claim 6, wherein the contaminant emitted by the etch stop layer comprises NHx. ### Claim 8 (depends on 6) The method according to claim 6, wherein the etch stop layer comprises SiC, tetra ethyl oxysilane (TEOS), SiN, or combinations thereof. ### Claim 9 (depends on 6) The method according to claim 6, wherein the at least one contact via further comprises sidewalls, and wherein the contaminant causes formation of photoresist scum on the sidewalls and bottom surface of the at least one contact via. ### Claim 10 (depends on 9) The method according to claim 9, wherein treating the first surface of the material layer with plasma oxygen prevents the photoresist scum from remaining on the sidewalls and bottom surface of the at least one contact via. ### Claim 11 A method of fabricating a semiconductor device, the method comprising: (a) providing a substrate; (b) depositing an insulating material layer over the substrate; (c) treating the insulating material layer with plasma oxygen; (d) depositing a layer of photoresist over a first surface of the insulating material layer after the treating of the insulating material layer; (e) patterning the layer of photoresist, thereby forming a patterned photoresist, exposing portions of the insulating material layer; (f) etching the exposed portions of at least the insulating material layer to form at least one contact via in the insulating material layer extending to a source or drain region or gate electrode of a device at a surface of the substrate; and (g) removing the patterned photoresist from the first surface of the insulating material layer. ### Claim 12 (depends on 11) The method according to claim 11, wherein the insulating material layer comprises an SiN film. ### Claim 13 (depends on 11) The method according to claim 11, wherein an etch stop layer is disposed beneath the insulating material layer, and a bottom surface of the at least one contact via extends at least to a top surface of the etch stop layer. ### Claim 14 (depends on 12) The method according to claim 12, wherein treating the insulating material layer provides for oxidation of the SiN film. ### Claim 15 (depends on 11) The method according to claim 11, wherein the insulating material layer comprises a dielectric material having a dielectric constant of about 3.5 or less. ### Claim 16 (depends on 13) The method according to claim 13, wherein the etch stop layer emits a contaminant during etching the exposed portions of at least the material layer, and wherein treating the first surface of the material layer results in surface oxidation. ### Claim 17 (depends on 16) The method according to claim 16, wherein the contaminant emitted by the etch stop layer comprises NHx. ### Claim 18 (depends on 16) The method according to claim 16, wherein the etch stop layer comprises SiC, tetra ethyl oxysilane (TEOS), SiN, or combinations thereof. ### Claim 19 (depends on 16) The method according to claim 16, wherein the at least one contact via further comprises sidewalls, wherein the contaminant causes formation of photoresist scum on the sidewalls and bottom surface of the at least one contact via. ### Claim 20 (depends on 19) The method according to claim 19, wherein treating the first surface of the material layer with plasma oxygen prevents the photoresist scum from remaining on the sidewalls and bottom surface of the at least one contact via.