# US 2013/0157458 A1 · Semiconductor device having a copper plug

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- Number: US 2013/0157458 A1
- Document ID: US20130157458A1
- Status: Published application
- Kind: A1
- Application number: 13/767,845
- Filed: 2013-02-14
- Published: 2013-06-20
- Earliest claimed: 2009-10-05
- Assignees: International Business Machines Corporation
- Inventors: Mukta G. Farooq; Emily R. Kinser; Ian D. Melville; Krystyna Waleria Semkow
- Web page: https://patentgrep.com/patent/US20130157458A1

## CPC

- H10P 14/40: of conductive or resistive materials
- H10W 20/425: {Barrier, adhesion or liner layers}
- H10W 72/01904: {using temporary auxiliary members, e.g. using sacrificial coatings or handle substrates}
- H10W 72/01938: {in gaseous form, e.g. by CVD or PVD}
- H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu}
- H10W 72/29: Bond pads specially adapted therefor
- H10W 72/921: {Structures or relative sizes of bond pads}
- H10W 72/923: {Bond pads having multiple stacked layers}
- H10W 72/934: {Cross-sectional shape, i.e. in side view}
- H10W 72/9415: {relative to the surface, e.g. recessed, protruding}
- H10W 72/942: {relative to underlying supporting features, e.g. bond pads, RDLs or vias}
- H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Disclosed is a process of making a semiconductor device wherein an insulation layer has a copper plug in contact with the last wiring layer of the device. There may also be a barrier layer separating the copper plug from the insulation layer. There may also be a cap layer over the copper plug to protect it from oxidation. There may also be a dielectric layer over the cap layer.

## Claims

### Claim 1

A method of forming a semiconductor device comprising:
obtaining a semiconductor substrate having a plurality of wiring layers wherein the last wiring layer comprises a conductive material;
forming an insulation layer on the last wiring layer, forming a via opening in the insulation layer to expose the conductive material in the last wiring layer;
forming a barrier layer in the via opening;
forming a copper plug on the barrier layer and filling the via opening; and
forming a cap layer over the insulation layer and the copper plug to prevent oxidation of the copper in the copper plug.

### Claim 2 (depends on 1)

The method of claim 1 wherein the barrier layer is contacting the conductive material in the last wiring layer.

### Claim 3 (depends on 1)

The method of claim 1 further comprising forming a dielectric layer on the cap layer and having an opening aligned with the copper plug.

### Claim 4 (depends on 1)

The method of claim 1 further comprising forming a dielectric layer on the cap layer and having an opening aligned with the copper plug and the cap layer over the copper plug.

### Claim 5 (depends on 3)

The method of claim 3 further comprising removing a portion of the cap layer within the opening to expose the copper plug.

### Claim 6 (depends on 1)

The method of claim 1 wherein the cap layer is a nitride layer.

### Claim 7 (depends on 1)

The method of claim 1 wherein the cap layer is selected from the group consisting of cobalt, cobalt/tungsten/phosphorus, and cobalt alloys.

### Claim 8 (depends on 3)

The method of claim 3 further comprising forming ball limiting metallurgy on the dielectric layer and in the opening.

### Claim 9

A method of forming a semiconductor device comprising:
forming an insulation layer on a last wiring layer of a semiconductor device;
forming a via opening in the insulation layer to expose a conductive material in the last wiring layer; and
forming a copper plug in, and filling, the via opening; and
forming a cap layer over the insulation layer and the copper plug to prevent oxidation of the copper in the copper plug.

### Claim 10 (depends on 9)

The method of claim 9 further comprising forming a dielectric layer on the cap layer and having an opening aligned with the copper plug.

### Claim 11 (depends on 9)

The method of claim 9 further comprising forming a dielectric layer on the cap layer and having an opening aligned with the copper plug and the cap layer over the copper plug.

### Claim 12 (depends on 10)

The method of claim 10 further comprising removing a portion of the cap layer within the opening to expose the copper plug.

### Claim 13 (depends on 9)

The method of claim 9 wherein the cap layer is a nitride layer.

### Claim 14 (depends on 9)

The method of claim 9 wherein the cap layer is selected from the group consisting of cobalt, cobalt/tungsten/phosphorus, and cobalt alloys.

### Claim 15 (depends on 10)

The method of claim 10 further comprising forming ball limiting metallurgy on the dielectric layer and in the opening.