# US 2013/0157434 A1 · Phase change memory apparatus and fabrication method thereof

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- Number: US 2013/0157434 A1
- Document ID: US20130157434A1
- Status: Published application
- Kind: A1
- Application number: 13/731,522
- Filed: 2012-12-31
- Published: 2013-06-20
- Earliest claimed: 2009-06-29
- Assignees: SK hynix Inc.
- Inventors: Jang Uk LEE
- Web page: https://patentgrep.com/patent/US20130157434A1

## CPC

- H10N 70/011: {Manufacture or treatment of multistable switching devices}
- H10B 63/20: {comprising selection components having two electrodes, e.g. diodes}
- H10N 70/066: {by filling of openings, e.g. damascene method}
- H10N 70/231: {based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect}
- H10N 70/826: {adapted for essentially vertical current flow, e.g. sandwich or pillar type devices}
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

A phase change memory apparatus is provided that includes a first electrode of a bar type having a trench formed on an active region of a semiconductor substrate, a second electrode formed in a bottom portion of the trench, and a bottom electrode contact formed on the second electrode.

## Claims

### Claim 1

A method of manufacturing a phase change memory apparatus, comprising:
forming a selective epitaxial growth layer on an active region of a semiconductor substrate;
forming a trench in the selective epitaxial growth layer;
forming an electrode having an opposite conductivity to the selective epitaxial growth layer in a portion of the trench; and
forming an electrode contact on the electrode.

### Claim 2 (depends on 1)

The method of claim 1, wherein the electrode contact is formed to be self-aligned with the trench.

### Claim 3 (depends on 1)

The method of claim 1, wherein the electrode comprises a metal material.

### Claim 4 (depends on 1)

The method of claim 1, wherein forming the electrode comprises implanting ions having an opposite conductivity to the selective epitaxial growth layer in the selective epitaxial growth layer.

### Claim 5 (depends on 1)

The method of claim 1, wherein forming the electrode comprises depositing a material of an opposite conductivity to the selective epitaxial growth layer.

### Claim 6 (depends on 1)

The method of claim 1, wherein the electrode contact is formed on the electrode to a determined height within the trench.

### Claim 7 (depends on 5)

The method of claim 5, further comprising forming a phase change material layer on the electrode contact.

### Claim 8 (depends on 7)

The method of claim 7, wherein at least one of the phase change material layer and the electrode contact is buried within the trench.

### Claim 9 (depends on 1)

The method of claim 1, further comprising:
forming a contact hole in the selective epitaxial growth layer to expose a portion of the active region;
forming an ionization layer on a side wall of the contact hole; and
forming a word line contact within the contact hole.