# US 2013/0157412 A1 · Chip on wafer bonder > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2013/0157412 A1 - Document ID: US20130157412A1 - Status: Published application - Kind: A1 - Application number: 13/767,554 - Filed: 2013-02-14 - Published: 2013-06-20 - Earliest claimed: 2007-11-30 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd. - Inventors: Chen-Hua Yu; Jui-Pin Hung; Weng-Jin Wu; Jean Wang; Wen-Chih Chiou - Web page: https://patentgrep.com/patent/US20130157412A1 ## CPC - H10W 90/00: Package configurations - H10P 72/0414: {using mainly spraying means, e.g. nozzles} - H10W 72/0198: {batch processes} - H10W 72/0711: {Apparatus therefor} - H10W 72/01371: {Cleaning, e.g. oxide removal or de-smearing} - H10W 72/073: {of die-attach connectors} - H10W 72/07311: {Treating the bonding area before connecting, e.g. by applying flux or cleaning} - H10W 72/07337: {using a polymer adhesive, e.g. an adhesive based on silicone or epoxy} - H10W 72/30: Die-attach connectors - Y10T 156/14: Surface bonding means and/or assembly means with shaping, scarifying, or cleaning joining surface only - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ## Abstract The present disclosure provides a bonding apparatus. The bonding apparatus includes a cleaning module designed for cleaning chips; and a chip-to-wafer bonding chamber configured to receive the chips from the cleaning module and designed for bonding the chips to a wafer. ## Claims ### Claim 1 A chip-to-wafer bonding method, comprising: loading a plurality of chips to a chip-to-wafer bonding apparatus having: a cleaning module designed for cleaning the plurality of chips; and a chip-to-wafer bonding chamber configured to receive the plurality of chips from the cleaning module and designed to bond the plurality of chips to a wafer; cleaning the plurality of chips; and bonding the plurality of chips to a wafer. ### Claim 2 (depends on 1) The chip-to-wafer bonding method of claim 1, further comprising performing a wafer level bonding to the plurality of chips bonded to the wafer in a wafer level bonding chamber integrated with the chip-to-wafer bonding apparatus. ### Claim 3 (depends on 1) The chip-to-wafer bonding method of claim 1, wherein cleaning the plurality of chips includes performing one of a wet cleaning process and a dry cleaning process. ### Claim 4 (depends on 1) The chip-to-wafer bonding method of claim 1, wherein the cleaning module is separate from the chip-to-wafer bonding chamber, and wherein cleaning the plurality of chips includes cleaning the plurality of chips within the cleaning module by providing a cleaning gas that removes oxide from the plurality of chips and by providing a protective gas that protects the plurality of chips from oxidation occurring on the plurality of chips. ### Claim 5 (depends on 1) The chip-to-wafer bonding method of claim 1, wherein the cleaning module is separate from the chip-to-wafer bonding chamber, and wherein cleaning the plurality of chips includes cleaning the plurality of chips within the cleaning module by providing a protective gas at a proximal portion and a distal portion of the cleaning and by providing a cleaning gas between the proximal and distal portions, wherein the cleaning gas removes oxide from the plurality of chips and the protective gas protects the plurality of chips from oxidation occurring on the plurality of chips. ### Claim 6 (depends on 5) The chip-to-wafer bonding method of claim 5, wherein the protective gas is different from the cleaning gas. ### Claim 7 A method comprising: cleaning a chip within a cleaning module of a chip-to-wafer bonding apparatus, wherein cleaning the chip within the cleaning module includes providing a cleaning material that removes oxide from the chip and providing a protective material that protects the chip from oxidation occurring on the chip; and bonding the chip to a wafer within a bonding module of the chip-to-wafer bonding apparatus, the bonding module being different than the cleaning module. ### Claim 8 (depends on 7) The method of claim 7, further comprising cleaning the wafer within a wafer cleaning module of chip-to-wafer bonding apparatus by providing the cleaning material to remove oxide from the wafer. ### Claim 9 (depends on 8) The method of claim 8, wherein the wafer cleaning module is different from the cleaning module. ### Claim 10 (depends on 7) The method of claim 7, wherein cleaning the chip within the cleaning module further includes moving the chip from a proximal portion to a distal portion of the cleaning module and providing the protective material at the proximal and distal portions of the cleaning module. ### Claim 11 (depends on 10) The method of claim 10, wherein cleaning the chip within the cleaning module further includes providing the cleaning material between the proximal and distal portions of the cleaning module. ### Claim 12 The method of claim of 11, wherein moving the chip from the proximal portion to the distal portion of the cleaning module includes moving by a conveyor belt. ### Claim 13 (depends on 7) The method of claim 7, wherein the cleaning material is selected from the group consisting of an formic acid vapor, forming gas, and combinations thereof. ### Claim 14 (depends on 7) The method of claim 7, further comprising providing the cleaning material and the protective material to the bonding module of the chip-to-wafer bonding apparatus. ### Claim 15 A method comprising: cleaning a chip within a cleaning module of a chip-to-wafer bonding device, wherein cleaning the chip within the cleaning module includes: providing a cleaning material that removes oxide from the chip; and providing a protective material that protects the chip from oxidation occurring on the chip, wherein providing the protective material includes providing the protective material on either side of the cleaning material; and bonding the chip to a wafer within a bonding module of the chip-to-wafer bonding device, the bonding module being different than the cleaning module. ### Claim 16 (depends on 15) The method of claim 15, wherein the cleaning material is different than the protective material. ### Claim 17 (depends on 15) The method of claim 15, further comprising cleaning the chip within the bonding module by providing the cleaning material to remove oxide from the chip within the bonding module. ### Claim 18 (depends on 17) The method of claim 17, wherein cleaning the chip within the bonding module further includes providing the protective material to protect the chip from oxidation occurring on the chip ### Claim 19 (depends on 15) The method of claim 15, further comprising performing a wafer level bonding process to the bonded chip and wafer in a wafer level bonding module, the wafer level bonding module being different than the bonding module. ### Claim 20 (depends on 15) The method of claim 15, wherein cleaning the chip within the cleaning module includes transporting the chip through the cleaning module along a conveyor belt.