# US 2013/0157398 A1 · Display device and method of fabricating the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2013/0157398 A1 - Document ID: US20130157398A1 - Status: Published application - Kind: A1 - Application number: 13/755,614 - Filed: 2013-01-31 - Published: 2013-06-20 - Earliest claimed: 2002-04-15 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Inventors: Masahiko HAYAKAWA; Satoshi MURAKAMI; Shunpei YAMAZAKI; Kengo AKIMOTO - Web page: https://patentgrep.com/patent/US20130157398A1 ## CPC - H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings - H10D 30/6715: {characterised by the doping profiles, e.g. having lightly-doped source or drain extensions} - H10D 86/00: Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates - H10D 86/0231: {using masks, e.g. half-tone masks} - H10D 86/451: {characterised by the compositions or shapes of the interlayer dielectrics} - H10D 86/60: wherein the TFTs are in active matrices - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract To achieve promotion of stability of operational function of display device and enlargement of design margin in circuit design, in a display device including a pixel portion having a semiconductor element and a plurality of pixels provided with pixel electrodes connected to the semiconductor element on a substrate, the semiconductor element includes a photosensitive organic resin film as an interlayer insulating film, an inner wall face of a first opening portion provided at the photosensitive organic resin film is covered by a second insulating nitride film, a second opening portion provided at an inorganic insulating film is provided on an inner side of the first opening portion, the semiconductor and a wiring are connected through the first opening portion and the second opening portion and the pixel electrode is provided at a layer on a lower side of an activation layer. ## Claims ### Claim 1 A method of fabricating a display device comprising a method of fabricating a display device comprising the steps of forming a pixel electrode covered by a base film on a substrate; forming a semiconductor film over the base film; forming a gate insulating film over the semiconductor film; forming a gate electrode over the gate insulating film; forming an impurity region at the semiconductor film; forming a first insulating nitride film over the gate electrode; forming an organic resin film over the first insulating nitride film; forming a first opening portion at the organic resin film over the impurity region; forming a second insulating nitride film to cover the first opening portion; forming a second opening portion by etching the second insulating nitride film, the first insulating nitride film and the gate insulating film at a bottom face of the first opening portion; forming a wiring over the second insulating nitride film and connecting the impurity region and the wiring through the first opening portion and the second opening portion: wherein in forming the first opening portion, the organic resin film is etched over the pixel electrode; in forming the second opening portion, the pixel electrode is exposed by etching the second insulating nitride film, the first insulating nitride film, the gate insulating film and the base film and thereafter connecting the pixel electrode and the wiring. ### Claim 2 A method of fabricating a display device comprising a method of fabricating a display device comprising the steps of: forming a pixel electrode covered by a base film on a substrate; forming a semiconductor film over the base film; forming a gate insulating film over the semiconductor film; forming a gate electrode over the gate insulating film; forming an impurity region at the semiconductor film; forming a first insulating nitride film over the gate electrode; forming an acrylic film over the first insulating nitride film; forming a first opening portion at the acrylic film over the impurity region; forming a second insulating nitride film to cover the first opening portion; forming a second opening portion by etching the second insulating nitride film, the first insulating nitride film and the gate insulating film at a bottom face of the first opening portion, forming a wiring over the second insulating nitride film and connecting the impurity region and the wiring through the first opening portion and the second opening portion: wherein in forming the first opening portion, the acrylic film is etched over the pixel electrode, in forming the second opening portion, the pixel electrode is exposed by etching the second insulating nitride film, the first insulating nitride film, the gate insulating film and the base film and thereafter connecting the pixel electrode and the wiring. ### Claim 3 (depends on 1) The display device according to claim 1, wherein said organic resin film is a photosensitive organic resin film. ### Claim 4 (depends on 2) The display device according to claim 2, wherein said acrylic film is a positive type photosensitive acrylic film. ### Claim 5 (depends on 1) The method of fabricating a display device according to claim 1, wherein the first insulating nitride film and the second insulating nitride film each comprises a silicon nitride film, a silicon nitrooxide film, a silicon oxynitride film, an aluminum nitride film, an aluminum nitrooxide film or an aluminum oxynitride film. ### Claim 6 (depends on 2) The method of fabricating a display device according to claim 2, wherein the first insulating nitride film and the second insulating nitride film each comprises a silicon nitride film, a silicon nitrooxide film, a silicon oxynitride film, an aluminum nitride film, an aluminum nitrooxide film or an aluminum oxynitride film. ### Claim 7 (depends on 1) The method of fabricating a display device according to claim 1, wherein a radius of curvature at an upper end portion of the first opening portion falls in a range of 3 through 30 μm. ### Claim 8 (depends on 2) The method of fabricating a display device according to claim 2, wherein a radius of curvature at an upper end portion of the first opening portion falls in a range of 3 through 30 μm. ### Claim 9 (depends on 1) The method of fabricating a display device according to claim 1, wherein a radius of curvature at an upper end portion of the first opening portion is changed continuously in a range of 3 through 30 μm. ### Claim 10 (depends on 2) The method of fabricating a display device according to claim 2, wherein a radius of curvature at an upper end portion of the first opening portion is changed continuously in a range of 3 through 30 μm. ### Claim 11 (depends on 1) The method of fabricating a display device according to claim 1, wherein a contact angle θ at a lower end portion of the first opening portion is set to 30°<θ<65°. ### Claim 12 (depends on 2) The method of fabricating a display device according to claim 2, wherein a contact angle θ at a lower end portion of the first opening portion is set to 30°<θ<65°.