# US 2013/0157201 A1 · Resist composition, method of forming resist pattern, and polymeric compound

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- Number: US 2013/0157201 A1
- Document ID: US20130157201A1
- Status: Published application
- Kind: A1
- Application number: 13/678,955
- Filed: 2012-11-16
- Published: 2013-06-20
- Earliest claimed: 2011-11-25
- Assignees: Tokyo Ohka Kogyo Co., Ltd.
- Inventors: Daichi Takaki; Daiju Shiono; Yoshiyuki Utsumi; Jun Iwashita
- Web page: https://patentgrep.com/patent/US20130157201A1

## CPC

- C08F 220/1812: {C12-(meth)acrylate, e.g. lauryl (meth)acrylate}
- C08F 220/382: {and containing oxygen, e.g. 2-sulfoethyl (meth)acrylate}
- C08F 220/58: containing oxygen in addition to the carbonamido oxygen {, e.g. N-methylolacrylamide, N-(meth)acryloylmorpholine}
- G03F 7/004: Photosensitive materials (G03F7/12, G03F7/14 take precedence)
- G03F 7/0045: {with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors}
- G03F 7/0392: {the macromolecular compound being present in a chemically amplified positive photoresist composition}
- G03F 7/0397: {the macromolecular compound having an alicyclic moiety in a side chain}
- G03F 7/2041: {in the presence of a fluid, e.g. immersion; using fluid cooling means}
- C08F: MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)

## Abstract

A resist composition containing a base component (A) which generates acid upon exposure, and exhibits changed solubility in a developing solution under the action of acid, wherein the base component (A) contains a polymeric compound (A1) having a structural unit (a5) represented by general formula (a5-0) shown below and a structural unit (a6) that generates acid upon exposure. In the formula, R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, R1 represents a sulfur atom or an oxygen atom, R2 represents a single bond or a divalent linking group, and Y represents a hydrocarbon group in which a carbon atom or a hydrogen atom may be substituted with a substituent.

## Claims

### Claim 1

A resist composition, comprising a base component (A) which generates acid upon exposure, and exhibits changed solubility in a developing solution under action of acid, wherein
the base component (A) comprises a polymeric compound (A1) having a structural unit (a5) represented by general formula (a5-0) shown below and a structural unit (a6) that generates acid upon exposure:
wherein R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, R1 represents a sulfur atom or an oxygen atom, R2 represents a single bond or a divalent linking group, and Y represents a hydrocarbon group in which a carbon atom or a hydrogen atom may be substituted with a substituent.

### Claim 2 (depends on 1)

The resist composition according to claim 1, wherein the structural unit (a6) comprises a structural unit having a group represented by general formula (a6-0-1) or general formula (a6-0-2) shown below:
wherein each of Q1 and Q2 independently represents a single bond or a divalent linking group, each of R3, R4 and R5 independently represents an organic group, wherein R4 and R5 may be bonded to each other to form a ring in combination with a sulfur atom in the formula, V− represents a counter anion, A− represents an organic group containing an anion, and Mm+ represents an organic cation having a valency of m, wherein m represents an integer of 1 to 3.

### Claim 3 (depends on 1)

The resist composition according to claim 1, wherein the polymeric compound (A1) also has a structural unit (a1) containing an acid-decomposable group that exhibits increased polarity under action of acid.

### Claim 4 (depends on 1)

A method of forming a resist pattern, the method including: using the resist composition of claim 1 to form a resist film on a substrate, conducting exposure of the resist film, and developing the resist film to form a resist pattern.

### Claim 5

A polymeric compound having a structural unit (a5) represented by general formula (a5-0) shown below and a structural unit (a6) that generates acid upon exposure:
wherein R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, R1 represents a sulfur atom or an oxygen atom, R2 represents a single bond or a divalent linking group, and Y represents a hydrocarbon group in which a carbon atom or a hydrogen atom may be substituted with a substituent.

### Claim 6 (depends on 5)

The polymeric compound according to claim 5, wherein the structural unit (a6) comprises a structural unit having a group represented by general formula (a6-0-1) or general formula (a6-0-2) shown below:
wherein each of Q1 and Q2 independently represents a single bond or a divalent linking group, each of R3, R4 and R5 independently represents an organic group, wherein R4 and R5 may be bonded to each other to form a ring in combination with a sulfur atom in the formula, V− represents a counter anion, A− represents an organic group containing an anion, and Mm+ represents an organic cation having a valency of m, wherein m represents an integer of 1 to 3.

### Claim 7 (depends on 5)

The polymeric compound according to claim 5, having a structural unit (a1) containing an acid-decomposable group that exhibits increased polarity under action of acid.