# US 2013/0157178 A1 · Method for correcting layout pattern and method for manufacturing photomask > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2013/0157178 A1 - Document ID: US20130157178A1 - Status: Published application - Kind: A1 - Application number: 13/330,680 - Filed: 2011-12-20 - Published: 2013-06-20 - Earliest claimed: 2011-12-20 - Assignees: United Microelectronics Corp. - Inventors: Chen-Hua Tsai; Chia-Wei Huang - Web page: https://patentgrep.com/patent/US20130157178A1 ## CPC - G03F 1/70: Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) ## Abstract A method for correcting a layout pattern includes the following steps. A first layout pattern, a second layout pattern, and a mis-alignment value are provided. The first layout pattern includes a first conducting line pattern, and the second layout pattern includes at least one contact via pattern. The contact via pattern at least partially overlaps the first conducting line pattern. The layout pattern is verified whether spacing between the contact via pattern and the first conducting line pattern is smaller than the mis-alignment value by a computing system. A first modified contact via pattern is then obtained by expanding the contact via pattern along a direction away from the spacing smaller than the mis-alignment value. ## Claims ### Claim 1 A method for correcting a layout pattern, comprising: providing a first layout pattern and a second layout pattern, wherein the first layout pattern comprises a first conducting line pattern, the second layout pattern comprises at least one contact via pattern, and the contact via pattern at least partially overlaps the first conducting line pattern; providing a mis-alignment value; verifying whether spacing between the contact via pattern and the first conducting line pattern is smaller than the mis-alignment value by a computing system; and expanding the contact via pattern along a direction away from the spacing smaller than the mis-alignment value for generating a first modified contact via pattern. ### Claim 2 (depends on 1) The method of claim 1, wherein the method of expanding the contact via pattern comprises expanding the contact via pattern with an additional length. ### Claim 3 (depends on 2) The method of claim 2, wherein the additional length is larger than or equal to the mis-alignment value. ### Claim 4 (depends on 2) The method of claim 2, wherein a difference between the mis-alignment value and the spacing between the contact via pattern and the first conducting line pattern is smaller than or equal to the additional length. ### Claim 5 (depends on 1) The method of claim 1, wherein the mis-alignment value is substantially smaller than 10 nanometers. ### Claim 6 (depends on 1) The method of claim 1, further comprising providing a third layout pattern, wherein the third layout pattern comprises a second conducting line pattern and a third conducting line pattern, and the contact via pattern at least partially overlaps the second conducting line pattern. ### Claim 7 (depends on 6) The method of claim 6, further comprising: providing a critical space value; verifying whether spacing between the first modified contact via pattern and the third conducting line pattern is smaller than the critical space value by the computing system; and shrinking the first modified contact via pattern along a direction away from the spacing smaller than the critical space value for generating a second modified contact via pattern, wherein spacing between the second modified contact via pattern and the third conducting line pattern is larger than or equal to the critical space value. ### Claim 8 (depends on 7) The method of claim 7, wherein the critical space value is substantially smaller than 10 nanometers. ### Claim 9 A method for manufacturing a photomask, comprising: providing a first layout pattern and a second layout pattern, wherein the first layout pattern comprises a first conducting line pattern, the second layout pattern comprises at least one contact via pattern, and the contact via pattern at least partially overlaps the first conducting line pattern; providing a mis-alignment value; verifying whether spacing between the contact via pattern and the first conducting line pattern is smaller than the mis-alignment value by a computing system; expanding the contact via pattern along a direction away from the spacing smaller than the mis-alignment value for generating a first modified contact via pattern; and outputting the second layout pattern to at least one photomask. ### Claim 10 (depends on 9) The method of claim 9, wherein the mis-alignment value is substantially smaller than 10 nanometers. ### Claim 11 (depends on 9) The method of claim 9, wherein the method of expanding the contact via pattern comprises expanding the contact via pattern with an additional length. ### Claim 12 (depends on 11) The method of claim 11, wherein the additional length is larger than or equal to the mis-alignment value. ### Claim 13 (depends on 11) The method of claim 11, wherein a difference between the mis-alignment value and the spacing between the contact via pattern and the first conducting line pattern is smaller than or equal to the additional length. ### Claim 14 A method for manufacturing a photomask, comprising: providing a first layout pattern, a second layout pattern, and a third layout pattern, wherein the first layout pattern comprises a first conducting line pattern, the second layout pattern comprises at least one contact via pattern, the third layout pattern comprises a second conducting line pattern and a third conducting line pattern, the contact via pattern at least partially overlaps the first conducting line pattern, and the contact via pattern at least partially overlaps the second conducting line pattern; providing a mis-alignment value and a critical space value; verifying whether spacing between the contact via pattern and the first conducting line pattern is smaller than the mis-alignment value by a computing system; expanding the contact via pattern along a direction away from the spacing smaller than the mis-alignment value to generate a first modified contact via pattern; verifying whether spacing between the first modified contact via pattern and the third conducting line pattern is smaller than the critical space value by the computing system; shrinking the first modified contact via pattern along a direction away from the spacing smaller than the critical space value for generating a second modified contact via pattern, wherein spacing between the second modified contact via pattern and the third conducting line pattern is larger than or equal to the critical space value; and outputting the second layout pattern to at least one photomask. ### Claim 15 (depends on 14) The method of claim 14, wherein the mis-alignment value is substantially smaller than 10 nanometers. ### Claim 16 (depends on 14) The method of claim 14, wherein the critical space value is substantially smaller than 10 nanometers. ### Claim 17 (depends on 14) The method of claim 14, wherein the method of expanding the contact via pattern comprises expanding the contact via pattern with an additional length. ### Claim 18 (depends on 17) The method of claim 17, wherein the additional length is larger than or equal to the mis-alignment value. ### Claim 19 (depends on 17) The method of claim 17, wherein a difference between the mis-alignment value and the spacing between the contact via pattern and the first conducting line pattern is smaller than or equal to the additional length.