# US 2013/0156950 A1 · Film-forming apparatus and film-forming method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2013/0156950 A1 - Document ID: US20130156950A1 - Status: Published application - Kind: A1 - Application number: 13/713,326 - Filed: 2012-12-13 - Published: 2013-06-20 - Earliest claimed: 2011-12-14 - Assignees: NuFlare Technology, Inc. - Inventors: Takumi Yamada; Yuusuke Sato - Web page: https://patentgrep.com/patent/US20130156950A1 ## CPC - C23C 16/0236: {by etching with a reactive gas} - C23C 16/4405: {Cleaning of reactor or parts inside the reactor by using reactive gases} - C23C 16/4412: {Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps} - Y02C 20/30: of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6] - Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - Y02C: CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG] - Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS ## Abstract A film-forming apparatus 1 includes a reaction chamber 2, an exhaust mechanism 3, and a pipe 4 connecting them. An inert gas supply pipe 11 supplying an inert gas 15 in the pipe 4, and a trap section 5′ connecting with an exhaust pipe 16 exhausting a reaction product 14 are provided in the pipe 4. A substrate is disposed in the reaction chamber 2 and film formation is performed on the substrate by supplying a reaction gas 7 from a reaction gas supply pipe 8. The reaction product 14 is collected in the trap section 5′. An inert gas 15 is supplied to the trap section 5′ to pressure-feed the reaction product 14 from the exhaust pipe 16 to a detoxifying apparatus 20. Cleaning is performed by supplying a cleaning gas 21 to the reaction chamber 2 and exhausting the same while bypassing the trap section 5. ## Claims ### Claim 1 A film-forming apparatus comprising: a reaction chamber having a reaction gas supply section which supplies a reaction gas, the reaction chamber configured to perform film formation on a substrate according to a vapor-phase growth reaction; a trap section configured to capture a reaction product resulting from the vapor-phase growth reaction in an exhaust gas exhausted from the reaction chamber; an exhaust mechanism configured to exhaust the exhaust gas except for the reaction product captured in the trap section to the outside; and an inert gas supply section configured to supply an inert gas into the trap section in order to pressure-feed the reaction product captured to the outside of the trap section. ### Claim 2 (depends on 1) The film-forming apparatus according to claim 1, further comprising a discarding system configured to discard the reaction product which has been pressure-fed from the trap section. ### Claim 3 (depends on 1) The film-forming apparatus according to claim 1, wherein the reaction chamber has a cleaning gas supply section supplying a cleaning gas for removing the reaction product, and wherein the exhaust mechanism exhausts a cleaning exhaust gas containing the cleaning gas from the reaction chamber via a bypass pipe bypassing the trap section. ### Claim 4 (depends on 1) The film-forming apparatus according to claim 1, wherein a cooling water passage is provided around the trap section. ### Claim 5 (depends on 1) The film-forming apparatus according to claim 1, further comprising a cooling apparatus configured to cool an exhaust gas exhausted from the reaction chamber and feeding the exhaust gas to the trap section. ### Claim 6 (depends on 2) The film-forming apparatus according to claim 2, wherein the inert gas supply section adjusts a supply pressure of the inert gas according to a distance between the trap section and the discarding system. ### Claim 7 (depends on 2) The film-forming apparatus according to claim 2, wherein the discarding system is a sealing container which can be sealed and can discard the reaction product without exposing the reaction product to the atmosphere. ### Claim 8 (depends on 2) The film-forming apparatus according to claim 2, wherein the discarding system is a detoxifying apparatus which can detoxify and discard the reaction product. ### Claim 9 (depends on 8) The film-forming apparatus according to claim 8, wherein the detoxifying apparatus is a scrubber. ### Claim 10 (depends on 2) The film-forming apparatus according to claim 2, further comprising a second inert gas supply section configured to supply an inert gas between the trap section and the discarding system. ### Claim 11 (depends on 2) The film-forming apparatus according to claim 2, wherein the inert gas supply section further supplies an inert gas between the trap section and the discarding system. ### Claim 12 (depends on 3) The film-forming apparatus according to claim 3, wherein the cleaning gas is a chlorine trifluoride gas. ### Claim 13 (depends on 3) The film-forming apparatus according to claim 3, further comprising a flow rate control section configured to control a flow rate of the exhaust gas or the cleaning exhaust gas each of which is exhausted by the exhaust mechanism. ### Claim 14 (depends on 13) The film-forming apparatus according to claim 13, wherein the flow rate control section is a throttle valve. ### Claim 15 A film-forming method comprising: providing a substrate in a reaction chamber and supplying a reaction gas into the reaction chamber to perform film formation on the substrate according to a vapor-phase growth reaction; introducing an exhaust gas exhausted from the reaction chamber into a trap section, capturing a reaction product contained in the exhaust gas, and exhausting the exhaust gas except for the captured reaction product; and supplying an inert gas into the trap section to pressure-feed the reaction product captured to the outside of the trap section. ### Claim 16 (depends on 15) The film-forming method according to claim 15, further comprising: supplying a cleaning gas into the reaction chamber for cleaning the reaction product, and exhausting a cleaning exhaust gas containing the cleaning gas through a bypass pipe bypassing the trap section. ### Claim 17 (depends on 16) The film-forming method according to claim 16, wherein the cleaning performed by supplying the cleaning gas into the reaction chamber is performed after a vapor-phase growth reaction has been performed and before the reaction product captured by the trap section is pressure-fed to the outside of the trap section. ### Claim 18 (depends on 16) The film-forming method according to claim 16, wherein the cleaning performed by supplying the cleaning gas into the reaction chamber is performed after the reaction product captured by the trap section has been pressure-fed to the outside of the trap section.