# US 2013/0156940 A1 · Adjustable nozzle for plasma deposition and a method of controlling the adjustable nozzle > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2013/0156940 A1 - Document ID: US20130156940A1 - Status: Published application - Kind: A1 - Application number: 13/328,474 - Filed: 2011-12-16 - Published: 2013-06-20 - Earliest claimed: 2011-12-16 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd. - Inventors: Wei-Ching WU; Wen-Long LEE; Ding-I LIU - Web page: https://patentgrep.com/patent/US20130156940A1 ## CPC - H01J 37/3244: {Gas supply means} - C23C 16/45563: {Gas nozzles} - C23C 16/45589: {Movable means, e.g. fans} - C23C 16/52: Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract The description relates to an adjustable nozzle capable of pivoting about an axis of the nozzle and translating along the axis of the nozzle. A high density plasma chemical vapor deposition (HDP CVD) chamber houses a plurality of adjustable nozzles. A feedback control system includes a control unit coupled to the adjustable nozzle and the HDP CVD chamber to form a more uniform thickness profile of films deposited on a wafer in the HDP CVD chamber. ## Claims ### Claim 1 A high density plasma chemical vapor deposition (HDP CVD) chamber comprising: a plurality of adjustable nozzles, wherein an adjustable nozzle comprises a base having a hollow center portion for conducting gas, the base configured for connection to a gas source; and a tip coupled to the base and having an opening formed therein for conducting gas from the base to the exterior of the nozzle, wherein the base is configured for pivoting about a longitudinal axis of the base and/or for translation along the longitudinal axis of the base in response to a control signal generated by a control unit. ### Claim 2 (depends on 1) The HDP CVD chamber of claim 1, wherein the control unit is configured for generating the control signal based on a measured thickness profile of a wafer having a film deposited on a surface thereof. ### Claim 3 (depends on 1) The HDP CVD chamber of claim 1, wherein the base of each of the plurality of adjustable nozzles is configured for pivoting about a longitudinal axis of the base and for translating along the longitudinal axis of the base in response to the control signal generated by the control unit. ### Claim 4 (depends on 1) The HDP CVD chamber of claim 1, wherein all nozzles in the HDP CVD chamber are adjustable nozzles. ### Claim 5 (depends on 1) The HDP CVD chamber of claim 1, further comprising a plurality of stationary nozzles. ### Claim 6 (depends on 1) The HDP CVD chamber of claim 1, further comprising a baffle positioned in a top portion of the HDP CVD chamber, wherein the baffle includes an adjustable nozzle. ### Claim 7 (depends on 1) The HDP CVD chamber of claim 1, further comprising a plurality of nozzle groups, wherein a distance between nozzles within one of the plurality of nozzle groups is less than a distance between each of the plurality of nozzle groups, and each of the plurality of nozzle groups includes at least one adjustable nozzle. ### Claim 8 A method of controlling a position of an adjustable nozzle comprising: depositing a film on a surface of a wafer using a high density plasma chemical vapor deposition (HDP CVD) chamber; measuring a thickness profile of the surface of the wafer; comparing the measurement of the thickness profile of the surface of the wafer with a reference value using a control unit; and transmitting a control signal to the adjustable nozzle to alter the position of the adjustable nozzle based on the result of the comparison, wherein the adjustable nozzle comprises: a base having a hollow center portion for conducting gas, the base configured for connection to a gas source; and a tip coupled to the base and having an opening formed therein for conducting gas from the base to the exterior of the nozzle, wherein the base is configured for pivoting about a longitudinal axis of the base and/or for translating along the longitudinal axis of the base in response to the control signal. ### Claim 9 (depends on 8) The method of claim 8, further comprising pivoting the base about the longitudinal axis of the base and translating the base along the longitudinal axis of the base in response to the control signal. ### Claim 10 (depends on 8) The method of claim 8, further comprising updating, using a feedback control system, the reference value after processing the wafer processed in the HDP CVD chamber. ### Claim 11 (depends on 8) The method of claim 8, further comprising determining, by the HDP CVD chamber, the thickness profile; and transmitting the determined thickness profile to the control unit. ### Claim 12 (depends on 8) The method of claim 8, further comprising determining, by the control unit, the thickness profile based on thickness data received from the HDP CVD chamber. ### Claim 13 (depends on 8) The method of claim 8, wherein the HDP CVD chamber houses a plurality of adjustable nozzles. ### Claim 14 (depends on 13) The method of claim 13, further comprising altering, using a feedback control system, the position of some of the plurality of adjustable nozzles to control the thickness profile uniformity. ### Claim 15 (depends on 13) The method of claim 13, further comprising altering, using the feedback control system, the position of each of the plurality of adjustable nozzles to control the thickness profile uniformity. ### Claim 16 A feedback control system for a high density plasma chemical vapor deposition (HDP CVD) chamber controlling a position of an adjustable nozzle comprising: a plurality of adjustable nozzles housed in the HDP CVD chamber; a control unit for generating a control signal, wherein an adjustable nozzle comprising: a base having a hollow center portion for conducting gas, the base configured for connection to a gas source; and a tip coupled to the base and having an opening formed therein for conducting gas from the base to the exterior of the nozzle, wherein the base is configured for pivoting about a longitudinal axis of the base and/or for translating along the longitudinal axis of the base in response to a control signal generated by a control unit. ### Claim 17 (depends on 16) The feedback control system of claim 16, wherein the control unit is configured for generating the control signal based on a thickness profile of a wafer having a film deposited on a surface thereof in the HDP CVD chamber. ### Claim 18 (depends on 16) The adjustable nozzle of claim 16, wherein the base is configured for pivoting about a longitudinal axis of the base and for translating along the longitudinal axis of the base in response to the control signal generated by the control unit. ### Claim 19 (depends on 16) The feedback control system of claim 16, wherein the feedback control system is configured for altering the position of some of the plurality of adjustable nozzles to optimize the thickness profile uniformity. ### Claim 20 (depends on 16) The feedback control system of claim 16, wherein the feedback control system is configured for altering the position of each of the plurality of adjustable nozzles to optimize the thickness profile uniformity.