# US 2013/0155754 A1 · Method and system for providing a magnetic memory utilizing a shift register > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2013/0155754 A1 - Document ID: US20130155754A1 - Status: Published application - Kind: A1 - Application number: 13/332,230 - Filed: 2011-12-20 - Published: 2013-06-20 - Earliest claimed: 2011-12-20 - Assignees: Samsung Electronics Co., Ltd. - Inventors: Dmytro Apalkov; Vladimir Nikitin; Alexey Vasilyevitch Khvalkovskiy - Web page: https://patentgrep.com/patent/US20130155754A1 ## CPC - G11C 19/0841: {using electric current} - G11C 11/161: {details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell} - G11C 11/1675: {Writing or programming circuits or methods} - G11C: STATIC STORES (semiconductor memory devices H10B) ## Abstract A magnetic memory is described. The magnetic memory includes magnetic memory elements corresponding to magnetic memory cells and at least one shift register. Each magnetic memory element includes a pinned layer, a free layer, and a nonmagnetic spacer layer between the pinned and free layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic memory element. The shift register(s) correspond to the magnetic memory elements. Each shift register includes domains separated by domain walls. A domain is antiparallel to an adjoining domain. The shift register(s) are configured such that an equilibrium state aligns a portion of the domains with the magnetic memory elements. The shift register(s) are also configured such that each domain walls shifts to a location of an adjoining domain wall when a shift current is passed through the shift register(s) in a direction along adjoining domains. ## Claims ### Claim 1 A magnetic memory comprising: a plurality of magnetic memory elements corresponding to a plurality of magnetic memory cells, each of the plurality of magnetic memory elements including a pinned layer, a free layer, and a nonmagnetic spacer layer residing between the pinned layer and the free layer, each of the plurality of magnetic memory elements being configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic memory element of the plurality of magnetic memory elements; and at least one shift register corresponding to the plurality of magnetic memory elements, each of the at least one shift register including a plurality of domains separated by a plurality of domain walls, a domain of the plurality of domains being antiparallel to an adjoining domain, the at least one shift register being configured such that an equilibrium state aligns a portion of the plurality of domains with the plurality of magnetic memory elements, the at least one shift register being configured such that each of the plurality of domain walls is shifted to a location of an adjoining domain wall when a shift current is passed through the at least one shift register in a direction along adjoining domains. ### Claim 2 (depends on 1) The magnetic memory of claim 1 wherein each of the portion of the plurality of domains alternate with a non-aligned domain of the plurality of domains, the non-aligned domain residing between magnetic memory elements. ### Claim 3 (depends on 2) The magnetic memory of claim 2 wherein each the plurality of magnetic memory elements includes an additional nonmagnetic spacer layer and an aligned domain of the portion of the plurality of domains, the aligned domain being a reference layer such that the aligned domain is in-stack for the each of the plurality of magnetic memory elements. ### Claim 4 (depends on 3) The magnetic memory of claim 3 wherein at least one of the nonmagnetic spacer layer and the additional nonmagnetic spacer layer is a tunneling barrier layer. ### Claim 5 (depends on 3) The magnetic memory of claim 3 wherein the plurality of magnetic memory elements is configured to be read when the aligned domain and the pinned layer are in an anti-dual state. ### Claim 6 (depends on 3) The magnetic memory of claim 3 wherein the plurality of magnetic memory elements is configured to be written when the aligned domain and the pinned layer are in a dual state. ### Claim 7 (depends on 3) The magnetic memory of claim 3 wherein the free layer, the pinned layer, and the aligned domain each has a magnetization perpendicular to plane. ### Claim 8 (depends on 3) The magnetic memory of claim 3 wherein the pinned layer is a synthetic antiferromagnet (SAF) including a plurality of ferromagnetic layers separated by a nonmagnetic separation layer, the plurality of ferromagnetic layers being antiferromagnetically aligned. ### Claim 9 (depends on 3) The magnetic memory of claim 3 further comprising: a plurality of contacts, each of the plurality of magnetic memory elements having a first contact and a second contact of the plurality of contacts, the first contact being adjacent to the aligned domain, the second contact being adjacent to the pinned layer. ### Claim 10 (depends on 2) The magnetic memory of claim 2 wherein the register layer is adjacent to the plurality of magnetic memory elements such that no domain of the plurality of domains is in stack for any of the plurality of magnetic memory elements. ### Claim 11 (depends on 10) The magnetic memory of claim 10 wherein the nonmagnetic layer is a tunneling barrier layer. ### Claim 12 (depends on 10) The magnetic memory of claim 10 wherein the plurality of magnetic memory elements is configured to be read when each of the portion of the plurality of domains aligned with the plurality of magnetic memory elements and the pinned layer of an aligned magnetic memory element of the plurality of magnetic memory elements are in an anti-dual state. ### Claim 13 (depends on 10) The magnetic memory of claim 10 wherein the plurality of magnetic memory elements is configured to be written when each of the portion of the plurality of domains aligned with the plurality of magnetic memory elements and the pinned layer of an aligned magnetic memory element of the plurality of magnetic memory elements are in a dual state. ### Claim 14 (depends on 10) The magnetic memory of claim 10 wherein the free layer, the pinned layer, and each of the plurality of domains each has a magnetization perpendicular to plane. ### Claim 15 (depends on 10) The magnetic memory of claim 10 wherein the pinned layer is a synthetic antiferromagnet (SAF) including a plurality of ferromagnetic layers separated by a nonmagnetic separation layer, the plurality of ferromagnetic layers being antiferromagnetically aligned. ### Claim 16 A method for programming a magnetic memory, the magnetic memory including a plurality of magnetic memory elements corresponding to a plurality of magnetic memory cells, each of the plurality of magnetic memory elements including a pinned layer, a free layer, and a nonmagnetic spacer layer residing between the pinned layer and the free layer, each of the plurality of magnetic memory elements being configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic memory element of the plurality of magnetic memory elements, the method comprising: driving a shift current through at least one shift register corresponding to the plurality of magnetic memory elements, each of the at least one shift register including a plurality of domains separated by a plurality of domain walls, a domain of the plurality of domains being antiparallel to an adjoining domain, the at least one shift register being configured such that an equilibrium state aligns a portion of the plurality of domains with the plurality of magnetic memory elements, the at least one shift register being configured such that each of the plurality of domain walls is shifted to a location of an adjoining domain wall when the shift current is passed through the at least one shift register in a direction along adjoining domains such that each of the plurality of magnetic memory elements is in a dual state with the portion of plurality of domains; and driving the write current through at least one of the plurality of magnetic memory elements being written. ### Claim 17 A method for programming a magnetic memory, the magnetic memory including a plurality of magnetic memory elements corresponding to a plurality of magnetic memory cells, each of the plurality of magnetic memory elements including a pinned layer, a free layer, and a nonmagnetic spacer layer residing between the pinned layer and the free layer, each of the plurality of magnetic memory elements being configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic memory element of the plurality of magnetic memory elements, the method comprising: driving the write current through at least a portion of at least one shift register corresponding to the plurality of magnetic memory elements and through at least one of the plurality of magnetic memory elements being written, each of the at least one shift register including a plurality of domains separated by a plurality of domain walls, a domain of the plurality of domains being antiparallel to an adjoining domain, the at least one shift register being configured such that an equilibrium state aligns a portion of the plurality of domains with the plurality of magnetic memory elements, the at least one shift register being configured such that each of the plurality of domain walls is shifted to a location of an adjoining domain wall when the write current is passed through the at least one shift register in a direction along adjoining domains such that each of the plurality of magnetic memory elements is in a dual state with the portion of plurality of domains. ### Claim 18 A method for initializing a magnetic memory, the magnetic memory including a plurality of magnetic memory elements corresponding to a plurality of magnetic memory cells, each of the plurality of magnetic memory elements including a pinned layer, a free layer, and a nonmagnetic spacer layer residing between the pinned layer and the free layer, each of the plurality of magnetic memory elements being configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic memory element of the plurality of magnetic memory elements, the method comprising: applying a magnetic field in a perpendicular direction to at least a portion of the plurality of magnetic memory elements and at least one shift register corresponding to the plurality of magnetic memory elements, each of the at least one shift register including a plurality of domains separated by a plurality of domain walls, a domain of the plurality of domains being antiparallel to an adjoining domain, the at least one shift register being configured such that an equilibrium state aligns a portion of the plurality of domains with the plurality of magnetic memory elements, the at least one shift register being configured such that each of the plurality of domain walls is shifted to a location of an adjoining domain wall when a shift current is passed through the at least one shift register in a direction along adjoining domains; wherein at least the free layer and the pinned layer provide a magnetostatic field antiparallel to the magnetic field at an additional portion of the plurality of domains between the plurality of magnetic memory elements such that each of the portion of the plurality of domains alternate with a non-aligned domain of the plurality of domains, the non-aligned domain residing between magnetic memory elements. ### Claim 19 (depends on 18) The method of claim 18 further comprising: heating at least a portion of the magnetic memory. ### Claim 20 (depends on 18) The method of claim 18 wherein the step of heating further includes: driving a current through the at least one shift register. ### Claim 21 (depends on 18) The method of claim 18 further comprising: applying an in-plane magnetic field. ### Claim 22 (depends on 21) The method of claim 21 wherein the in-plane magnetic field saturates each of the plurality of domains.