# US 2013/0155573 A1 · Electronic component and manufacturing method thereof

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- Number: US 2013/0155573 A1
- Document ID: US20130155573A1
- Status: Published application
- Kind: A1
- Application number: 13/720,405
- Filed: 2012-12-19
- Published: 2013-06-20
- Earliest claimed: 2011-12-19
- Assignees: Samsung Electro-Mechanics Co., Ltd.
- Inventors: Hyun Tae Kim; Hee Jung Jung; Dae Bok Oh; Sang Hoon Kwon; Seoung Ho Kim; Jong Woo Choi
- Web page: https://patentgrep.com/patent/US20130155573A1

## CPC

- H01G 13/00: Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
- H01G 4/0085: {Fried electrodes}
- H01G 4/2325: {characterised by the material of the terminals}
- H01G 4/30: Stacked capacitors (H01G4/33 takes precedence)
- H01G 4/12: Ceramic dielectrics {(H01G4/085 takes precedence)}
- H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10)

## Abstract

There is provided an electronic component including a ceramic sintered body having a plurality of internal electrodes formed therein, and external electrodes formed on an outer surface of the ceramic sintered body. Each of the external electrodes includes a copper (Cu) electrode layer electrically connected to the internal electrodes, a copper (Cu)-tin (Sn) alloy layer formed on an outer surface of the electrode layer, and a tin (Sn) plating layer formed on an outer surface of the alloy layer.

## Claims

### Claim 1

An electronic component, comprising:
a ceramic sintered body having a plurality of internal electrodes formed therein; and
external electrodes formed on an outer surface of the ceramic sintered body,
wherein each of the external electrodes includes a copper (Cu) electrode layer electrically connected to the internal electrodes, a copper (Cu)-tin (Sn) alloy layer formed on an outer surface of the electrode layer, and a tin (Sn) plating layer formed on an outer surface of the alloy layer.

### Claim 2 (depends on 1)

The electronic component of claim 1, wherein the alloy layer includes nickel (Ni).

### Claim 3 (depends on 1)

The electronic component of claim 1, wherein the plating layer includes bismuth (Bi).

### Claim 4

A manufacturing method of an electronic component, the manufacturing method comprising:
preparing a ceramic sintered body;
forming at least one electrode layer on an outer surface of the ceramic sintered body;
forming an alloy layer by a primary dipping process of dipping the electrode layer in a first molten solder; and
forming a plating layer by a secondary dipping process of dipping the alloy layer in a second molten solder.

### Claim 5 (depends on 4)

The manufacturing method of claim 4, wherein the electrode layer is formed of copper (Cu).

### Claim 6 (depends on 4)

The manufacturing method of claim 4, wherein the first molten solder is formed of a composition including nickel (Ni), copper (Cu), and tin (Sn).

### Claim 7 (depends on 6)

The manufacturing method of claim 6, wherein the alloy layer is formed of a copper (Cu)-tin (Sn) alloy including nickel (Ni).

### Claim 8 (depends on 4)

The manufacturing method of claim 4, wherein the second molten solder is formed of a composition including tin (Sn) and bismuth (Bi).

### Claim 9 (depends on 8)

The manufacturing method of claim 8, wherein the plating layer is a tin (Sn) plating layer including bismuth (Bi).

### Claim 10 (depends on 4)

The manufacturing method of claim 4, wherein the primary dipping process is performed by using the first molten solder having a high temperature, and
the secondary dipping process is performed by using the second molten solder having a low temperature.

### Claim 11 (depends on 10)

The manufacturing method of claim 10, wherein the first molten solder is melted at a temperature of 260□ or higher, and
the second molten solder is melted at a temperature of 220□ or lower.

### Claim 12 (depends on 4)

The manufacturing method of claim 4, wherein the primary dipping process is performed for a shorter time than that of the secondary dipping process.

### Claim 13 (depends on 4)

The manufacturing method of claim 4, wherein the electronic component is a multilayer ceramic capacitor.