# US 2013/0155409 A1 · Method for determining the active doping concentration of a doped semiconductor region > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2013/0155409 A1 - Document ID: US20130155409A1 - Status: Published application - Kind: A1 - Application number: 13/689,473 - Filed: 2012-11-29 - Published: 2013-06-20 - Earliest claimed: 2010-06-04 - Assignees: Katholieke Universiteit Leuven; Imec - Inventors: Janusz BOGDANOWICZ; Trudo CLARYSSE; Wilfried VANDERVORST - Web page: https://patentgrep.com/patent/US20130155409A1 ## CPC - G01N 21/55: Specular reflectivity - G01N 21/1717: {with a modulation of one or more physical properties of the sample during the optical investigation, e.g. electro-reflectance} - G01N 21/9501: {Semiconductor wafers (manufacturing processes per se of semiconductor devices implementing a measuring step H10P74/20)} - G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q) ## Abstract A method and system for optically determining a substantially fully activated doping profile are disclosed. The substantially fully activated doping profile is characterized by a set of physical parameters. In one aspect, the method includes obtaining a sample comprising a fully activated doping profile and a reference, and obtaining photomodulated reflectance (PMOR) offset curve measurement data and DC reflectance measurement data for the sample including the fully activated doping profile and for the reference. The method also includes determining values for the set of physical parameters of the doping profile based on both the photomodulated reflectance offset curve measurements and the DC reflectance measurements. ## Claims ### Claim 1 A method of optically determining a substantially fully activated doping profile, the substantially fully activated doping profile being characterized by a set of physical parameters, the method comprising: obtaining a sample comprising a fully activated doping profile and a reference; obtaining photomodulated reflectance (PMOR) offset curve measurement data and DC reflectance measurement data for the sample comprising the fully activated doping profile and for the reference; and determining values for the set of physical parameters of the doping profile based on both the photomodulated reflectance offset curve measurements and the DC reflectance measurements, wherein determining the set of physical parameters of the doping profile comprises determining from the photomodulated reflectance offset curve measurement data on the sample and from the DC reflectance measurement on the sample at least one of a junction depth Xj, an active doping concentration Nact and a profile abruptness or backside slope Sact. ### Claim 2 (depends on 1) The method according to claim 1, wherein obtaining photomodulated reflectance offset curve measurement data and DC reflectance measurement data comprises performing a photomodulated reflectance offset curve measurement and a DC reflectance measurement. ### Claim 3 (depends on 1) The method according to claim 1, wherein obtaining photomodulated reflectance offset curve measurement data and DC reflectance measurement data comprises obtaining data recorded using the same measurement setup. ### Claim 4 (depends on 3) The method according to claim 3, wherein the DC reflectance measurement data is DC reflectance of a probe laser of a photomodulated reflectance offset curve measurements used for determining the photomodulated reflectance offset curve measurements. ### Claim 5 (depends on 1) The method according to claim 1, wherein obtaining photomodulated reflectance offset curve measurement data and DC reflectance measurement data comprises obtaining data which is recorded substantially simultaneous. ### Claim 6 (depends on 1) The method according to claim 1, wherein the method comprises selecting a predetermined profile shape for fully activated doping profile defined by the set of physical parameters, wherein determining values for the set of physical parameters comprises determining values for the set of physical parameters defining the predetermined profile shape. ### Claim 7 (depends on 6) The method according to claim 6, wherein the predetermined profile shape is any of the following: part of a Gaussian shape, part of a Lorentzian shape, part of a complementary error function, and a box shape or box-like shape. ### Claim 8 (depends on 1) The method according to claim 1, wherein determining the set of physical parameters of the doping profile comprises determining a surface excess carrier concentration ΔNsub and excess temperature ΔTsurf from the photomodulated reflectance offset curve measurement data obtained for the reference and determining a reflectance R0 from the DC measurement data obtained for the reference. ### Claim 9 (depends on 1) A non-transitory computer-readable medium having stored therein instructions which, when executed on a processor, performs the method according to claim 1. ### Claim 10 A system for optically determining a substantially fully activated doping profile, the substantially fully activated doping profile being characterized by a set of physical parameters, the system comprising: a measurement module comprising a pump laser and a probe laser configured to obtain photomodulated reflectance (PMOR) offset curve measurement data and to obtain DC reflectance measurement data of the probe laser; and a processing module configured to receive photomodulated reflectance (PMOR) offset curve measurement data, to receive DC reflectance measurement data of the probe laser for a sample and a reference, and to determine, based on the measurement data, values for the set of physical parameters of the doping profile. ### Claim 11 (depends on 10) The system according to claim 10, wherein the measurement module is configured to perform a photomodulated reflectance offset curve measurement and a DC reflectance measurement. ### Claim 12 (depends on 10) The system according to claim 10, wherein the measurement module is configured to obtain data recorded using the same measurement setup. ### Claim 13 (depends on 12) The system according to claim 12, wherein the DC reflectance measurement data is DC reflectance of a probe laser of a photomodulated reflectance offset curve measurements used for determining the photomodulated reflectance offset curve measurements. ### Claim 14 (depends on 10) The system according to claim 10, wherein the measurement module is configured to obtain data which is recorded substantially simultaneous. ### Claim 15 (depends on 10) The system according to claim 10, wherein the processing module is configured to select a predetermined profile shape for fully activated doping profile defined by the set of physical parameters and to determine values for the set of physical parameters defining the predetermined profile shape. ### Claim 16 (depends on 15) The system according to claim 15, wherein the predetermined profile shape is any of the following: part of a Gaussian shape, part of a Lorentzian shape, part of a complementary error function, and a box shape or box-like shape. ### Claim 17 (depends on 10) The system according to claim 10, wherein the processing module is configured to determine a surface excess carrier concentration ΔNsub and excess temperature ΔTsurf from the photomodulated reflectance offset curve measurement data obtained for the reference and to determine a reflectance R0 from the DC measurement data obtained for the reference. ### Claim 18 A non-transitory computer-readable medium having stored therein a computer program product comprising executable machine readable computer code which, when executed on a processor, performs a method of determining a substantially fully activated doping profile, the substantially fully activated doping profile being characterized by a set of physical parameters, the method comprising: receiving photomodulated reflectance (PMOR) offset curve measurement data; receiving DC reflectance measurement data of the probe laser for a sample and a reference; and determining, based on the measurement, data values for the set of physical parameters of the doping profile. ### Claim 19 A system for optically determining a substantially fully activated doping profile, the substantially fully activated doping profile being characterized by a set of physical parameters, the system comprising: means for obtaining a sample comprising a fully activated doping profile and a reference; means for obtaining photomodulated reflectance (PMOR) offset curve measurement data and DC reflectance measurement data for the sample comprising the fully activated doping profile and for the reference; and means for determining values for the set of physical parameters of the doping profile based on both the photomodulated reflectance offset curve measurements and the DC reflectance measurements, wherein the determining means further comprises means for determining from the photomodulated reflectance offset curve measurement data on the sample and from the DC reflectance measurement on the sample at least one of a junction depth Xj, an active doping concentration Nact and a profile abruptness or backside slope Sact.