# US 2013/0155404 A1 · System for real-time analysis of material distribution in cigs thin film using laser-induced breakdown spectroscopy

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- Number: US 2013/0155404 A1
- Document ID: US20130155404A1
- Status: Published application
- Kind: A1
- Application number: 13/325,840
- Filed: 2011-12-14
- Published: 2013-06-20
- Earliest claimed: 2011-12-14
- Assignees: Gwangju Institute of Science and Technology
- Inventors: Sungho JEONG; Seokhee LEE; Hee-Sang SHIM
- Web page: https://patentgrep.com/patent/US20130155404A1

## CPC

- G01J 3/443: Emission spectrometry
- G01N 21/718: {Laser microanalysis, i.e. with formation of sample plasma}
- G01J: MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY (light sources F21, H01J, H01K, H05B; investigating properties of materials by optical means G01N)
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)

## Abstract

The present invention relates to a process control system which can measure the physical properties of a CIGS thin film in real-time in a continuous production line of a CIGS thin film solar cell, more specifically to a system for real-time analysis of material distribution of a CIGS thin film comprising: a header, which comprises a laser irradiation unit producing plasma from the CIGS thin film by irradiating a laser beam to a part of the CIGS thin film; and a spectrum detection optical unit detecting a spectrum generated from the plasma; a transfer unit, which transfers the header at the same rate and to the direction with the transfer rate and direction of the CIGS thin film; and a spectrum analysis unit, which analyzes the spectrum detected by the spectrum detection optical unit.

## Claims

### Claim 1

A system for real-time analysis of material distribution of a CIGS thin film comprising:
a header, which comprises a laser irradiation unit producing plasma by irradiating a laser beam to a part of the CIGS thin film; and a spectrum detection optical unit detecting a spectrum generated from the plasma;
a transfer unit, which transfers the header at the same rate and to the direction with the transfer rate and direction of the CIGS thin film by being bound to the upper part of the header; and
a spectrum analysis unit, which analyzes the spectrum detected by the spectrum detection optical unit by being electrically connected with the spectrum detection optical unit.

### Claim 2 (depends on 1)

The system for real-time analysis of material distribution of a CIGS thin film of claim 1, wherein the laser irradiation unit comprises a laser unit producing laser; and an automatic focusing unit adjusting focus of the laser beam supplied from the laser unit.

### Claim 3 (depends on 1)

The system for real-time analysis of material distribution of a CIGS thin film of claim 1, wherein the header further comprises a beam irradiation position adjustment unit controlling the irradiation position of the laser beam.

### Claim 4 (depends on 3)

The system for real-time analysis of material distribution of a CIGS thin film of claim 3, wherein the beam irradiation position adjustment is a galvanometer.

### Claim 5 (depends on 3)

The system for real-time analysis of material distribution of a CIGS thin film of claim 3, wherein the irradiation position of the laser beam is within a range of −180° to +180° on the basis of the transfer direction of the CIGS thin film (D).

### Claim 6 (depends on 1)

The system for real-time analysis of material distribution of a CIGS thin film of claim 1, wherein the header further comprises an indicator recognition optical unit recognizing an indicator to trace the position where the laser beam is irradiated.