# US 2013/0155381 A1 · Methods for small trench patterning using chemical amplified photoresist compositions > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2013/0155381 A1 - Document ID: US20130155381A1 - Status: Published application - Kind: A1 - Application number: 13/328,278 - Filed: 2011-12-16 - Published: 2013-06-20 - Earliest claimed: 2011-12-16 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd. - Inventors: Ya Hui Chang; Chia-Chu Liu - Web page: https://patentgrep.com/patent/US20130155381A1 ## CPC - G03F 7/2022: {Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure} - G03F 7/0045: {with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors} - G03F 7/095: having more than one photosensitive layer (G03F7/075 takes precedence) - G03F 7/2004: {characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light} - G03F 7/203: {comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation} - G03F 7/32: Liquid compositions therefor, e.g. developers - H10P 76/2041: {Photolithographic processes} - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A method for forming a pattern on a substrate is described. The method includes providing a substrate, forming a photosensitive layer over the substrate, exposing the photosensitive layer to a first exposure energy through a first mask, exposing the photosensitive layer to a second exposure energy through a second mask, baking the photosensitive layer, and developing the exposed photosensitive layer. The photosensitive layer includes a polymer that turns soluble to a developer solution, at least one photo-acid generator (PAG), and at least one photo-base generator (PBG). A portion of the layer exposed to the second exposure energy overlaps with a portion exposed to the first exposure energy. ## Claims ### Claim 1 A method for forming a pattern on a substrate, the method comprising: providing a substrate; forming a photosensitive layer over the substrate, wherein the photosensitive layer comprises a polymer that turns soluble to a developer solution, at least one photo-acid generator (PAG), and at least one photo-base generator (PBG); exposing the photosensitive layer to a first exposure energy through a first mask; exposing the photosensitive layer to a second exposure energy through a second mask, wherein a portion of the layer exposed to the second exposure energy overlaps with a portion exposed to the first exposure energy; baking the photosensitive layer; and developing the exposed photosensitive layer. ### Claim 2 (depends on 1) The method of claim 1, wherein the first exposure energy is sufficient to activate the PAG, the second exposure energy is sufficient to activate the PAG and PBG, or both. ### Claim 3 (depends on 1) The method of claim 1, wherein the PAG is present at a first concentration, and the PBG is present at a second concentration. ### Claim 4 (depends on 3) The method of claim 3, wherein the second concentration is greater than or equal to the first concentration. ### Claim 5 (depends on 3) The method of claim 3, further comprising adjusting the first concentration, second concentration, or both to improve contrast and/or a critical dimension in the pattern. ### Claim 6 (depends on 1) The method of claim 1, wherein the second concentration is greater than the first concentration and the portion of the photosensitive layer exposed to the second exposure energy remains after developing the exposed photosensitive layer. ### Claim 7 (depends on 1) The method of claim 1, wherein the second concentration is about equal to the first concentration and the portion of the photosensitive layer exposed to the second wavelength is washed away after developing the exposed photosensitive layer. ### Claim 8 (depends on 1) The method of claim 1, wherein the second exposure energy is higher in intensity than the first exposure energy. ### Claim 9 (depends on 1) The method of claim 1, further comprising adjusting an intensity of the first exposure energy, second exposure energy, or both to improve contrast and/or a critical dimension in the pattern. ### Claim 10 (depends on 1) The method of claim 1, wherein the PAG comprises one or more sulfonium salts, iodinium salts, sulfonyldiazomethane compounds, N-sulfonyloxyimide compounds, benzoinsulfonate compounds, pyrogallol trisulfonate compounds, nitrobenzyl sulfonate compounds, sulfone compounds, and glyoxime derivatives. ### Claim 11 (depends on 1) The method of claim 1, wherein the PBG comprises one or more of a carbamate, carbamonylhydroxyamine, oxime, sulfonamide, or lactam. ### Claim 12 A method for forming a pattern on a substrate, comprising: providing a substrate; forming a photosensitive layer on a substrate, the photosensitive layer comprising a polymer that turns soluble to a developer solution, a photo-acid generator (PAG) at a first concentration that decomposes to form acid in response to a first exposure energy, and a photo-base generator (PBG) at a second concentration that decomposes to form a base in response to a second exposure energy; exposing the photosensitive layer to the first exposure energy through a first mask; exposing the photosensitive layer to the second exposure energy through a second mask, wherein a portion of the layer exposed to the second exposure energy overlaps with a portion exposed to the first exposure energy; baking the photosensitive layer; and developing the exposed photosensitive layer. ### Claim 13 (depends on 12) The method of claim 12, wherein the second exposure energy is higher than the first exposure energy to activate the PAG and PBG. ### Claim 14 (depends on 12) The method of claim 12, further comprising adjusting an intensity of the first exposure energy, second exposure energy, or both to improve contrast and/or a critical dimension in the pattern. ### Claim 15 (depends on 12) The method of claim 12, further comprising adjusting the first concentration, second concentration, or both to improve contrast and/or a critical dimension in the pattern. ### Claim 16 (depends on 12) The method of claim 12, wherein the second concentration is greater than the first concentration and the portion of the photosensitive layer exposed to the second exposure energy remains after developing the exposed photosensitive layer. ### Claim 17 (depends on 12) The method of claim 12, wherein the second concentration is about equal to the first concentration and the portion of the photosensitive layer exposed to the second exposure energy is washed away after developing the exposed photosensitive layer. ### Claim 18 A method for forming a pattern on a substrate, comprising: providing a substrate; forming a photosensitive layer on a substrate, the photosensitive layer comprising a polymer that turns soluble to a developer solution, a photo-acid generator (PAG) at a first concentration that decomposes to form acid in response to a first exposure energy, and a photo-base generator (PBG) at a second concentration that decomposes to form a base in response to a second exposure energy; adjusting the first concentration, second concentration, or both to improve contrast and/or a critical dimension in the pattern; adjusting an intensity of the first exposure energy, second exposure energy, or both to improve contrast and/or a critical dimension in the pattern; exposing the photosensitive layer to the first exposure energy through a first mask; exposing the photosensitive layer to the second exposure energy through a second mask, wherein a portion of the layer exposed to the second exposure energy overlaps with the a portion exposed to the first exposure energy; baking the photosensitive layer; and developing the exposed photosensitive layer. ### Claim 19 (depends on 19) The method of claim 19, wherein the second exposure energy is sufficient to activate the PAG and PBG. ### Claim 20 (depends on 19) The method of claim 19, wherein the second concentration is greater than the first concentration and the portion of the photosensitive layer exposed to the second exposure energy remains after developing the exposed photosensitive layer, or the second concentration is about equal to the first concentration and the portion of the photosensitive layer exposed to the second exposure energy is washed away after developing the exposed photosensitive layer.