# US 2013/0154764 A1 · In-phase h-plane waveguide t-junction with e-plane septum

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- Number: US 2013/0154764 A1
- Document ID: US20130154764A1
- Status: Published application
- Kind: A1
- Application number: 13/707,049
- Filed: 2012-12-06
- Published: 2013-06-20
- Earliest claimed: 2011-12-06
- Assignees: ViaSat, Inc.
- Inventors: Donald Lawson Runyon; Dominic Quang Nguyen; Anders Jensen
- Web page: https://patentgrep.com/patent/US20130154764A1

## CPC

- H01Q 1/02: Arrangements for de-icing; Arrangements for drying-out {; Arrangements for cooling; Arrangements for preventing corrosion}
- H01P 1/00: Auxiliary devices (coupling devices of the waveguide type H01P5/00)
- H01P 5/12: Coupling devices having more than two ports (H01P5/04 takes precedence)
- H01P 11/001: {Manufacturing waveguides or transmission lines of the waveguide type}
- H01Q 1/28: Adaptation for use in or on aircraft, missiles, satellites, or balloons
- H01Q 13/02: Waveguide horns
- H01Q 21/0037: {linear waveguide fed arrays}
- H01Q 21/0075: {Stripline fed arrays (H01Q21/065 takes precedence)}
- Y10T 29/49002: Electrical device making
- Y10T 29/49016: Antenna or wave energy "plumbing" making
- H01Q: ANTENNAS, i.e. RADIO AERIALS (radiators or antennas for microwave heating H05B6/72)
- H01P: WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE (operating at optical frequencies G02B)
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

In an example embodiment, an in-phase H-plane T-junction can comprise: a first waveguide port; a second waveguide port; a third waveguide port, wherein the third waveguide port can be a common port; and an E-plane septum. The first, second, and third waveguide ports can be in the H-plane and can be each connected to each other in a T configuration. The T-junction can be configured such that microwave signals in a first band can be in-phase with each other at the first and second waveguide ports, and microwave signals in a second band can be in-phase with each other at the first and second waveguide ports. The H-plane T-junction can be at least one of a power combiner and a power divider.

## Claims

### Claim 1

An in-phase H-plane T-junction comprising:
a first waveguide port;
a second waveguide port;
a third waveguide port, wherein the third waveguide port is a common port; and
an E-plane septum;
wherein the first, second, and third waveguide ports are all in the H plane and are each connected to each other in a T configuration,
wherein the T-junction is configured such that microwave signals in a first band are in-phase with each other at the first and second waveguide ports, and microwave signals in a second band are in-phase with each other at the first and second waveguide ports; and
wherein the H-plane T-junction is at least one of a power combiner and a power divider.

### Claim 2 (depends on 1)

The in-phase H-plane, T-junction of claim 1;
wherein the first band is a receive frequency band, and a first receive signal received at the first waveguide port is in phase with a second receive signal received at the second waveguide port;
wherein the second band is a transmit frequency band, and a first transmit signal transmitted from the first port is in phase with a second transmit signal transmitted from the second port; and
wherein the difference in frequency between the receive frequency hand and the transmit frequency band is greater than 1.5.

### Claim 3 (depends on 1)

The in-phase H-plane, T-junction of claim 1, wherein the E-plane septum is a full width E-plane septum.

### Claim 4 (depends on 1)

The in-phase H-plane, T-junction of claim 1, wherein the power split ratio of the H-plane T-junction is related to the vertical offset of the E-plane septum within the third waveguide.

### Claim 5 (depends on 1)

The in-phase H-plane, T-junction of claim 1, wherein the power split ratio of the H-plane T-junction is unequal.

### Claim 6 (depends on 1)

The in-phase H-plane, T-junction of claim 1, wherein the septum comprises a leading edge, and wherein the leading edge shape includes at least one of: a taper, a corrugation, a linear taper, steps, a fillet, a miter, a spline.

### Claim 7

An in-phase H-plane T-junction comprising:
a first waveguide having a first waveguide port at a first end of said first waveguide and an H-type T-junction with an E-plane septum at a second end of the first waveguide, wherein the E-plane septum is a full width E-plane septum across the width of the first waveguide and divides the first waveguide into a top waveguide portion and a bottom waveguide portion, wherein the output of the first waveguide port faces in a first direction, and wherein the first waveguide port is in a first plane;
a second waveguide port the output of which faces in a second direction, wherein the second waveguide port is in a second plane, wherein the second waveguide port is connected to a second waveguide that connects to the bottom waveguide portion;
a third waveguide port the output of which faces in a third direction opposite the second direction, wherein the third waveguide port is in a third plane, and wherein the first, second and third planes are parallel to each other, and wherein the third waveguide port is connected to a third waveguide that connects to the top waveguide portion;
wherein the T-junction is configured such that microwave signals in a first band are in-phase with each other at the second and third waveguide ports, and microwave signals in a second band are in-phase with each other at the second and third waveguide ports; and
wherein the H-plane T-junction is at least one of a power combiner and a power divider.

### Claim 8 (depends on 7)

The in-phase H-plane T-junction of claim 7, wherein the power split ratio of the H-plane T-junction is the ratio of the cross-sectional area of the top waveguide portion over the bottom waveguide portion; and wherein the area of the first waveguide is equal to the area of the top waveguide portion plus the area of the bottom waveguide portion plus the area attributable to the septum thickness.

### Claim 9 (depends on 7)

The in-phase H-plane T-junction of claim 7, wherein the power split ratio of the H-plane T-junction is the ratio of the height of the top waveguide portion over the bottom waveguide portion.

### Claim 10 (depends on 7)

The in-phase H-plane T-junction of claim 7, wherein the power split is related to the vertical offset of the E-plane septum within the first waveguide.

### Claim 11 (depends on 7)

The in-phase H-plane T-junction of claim 7, wherein the power split is unequal.

### Claim 12 (depends on 7)

The in-phase H-plane T-junction of claim 7, wherein the septum comprises a leading edge, and wherein the leading edge shape includes at least one of: a taper, a corrugation, a linear taper, steps, a fillet, a miter, a spline.

### Claim 13 (depends on 7)

The in-phase H-plane T-junction of claim 7;
wherein the bottom waveguide portion steps up such that at the second waveguide port the second waveguide has a height equal to the height of the first waveguide; and
wherein the top waveguide portion steps down such that at the third waveguide port the third waveguide has a height equal to the height of the first waveguide.

### Claim 14

A method for making an in-phase H-plane T-junction, wherein the T-junction comprises one of a power combiner and a power divider, the method comprising:
forming a T-junction waveguide by removing material from both sides of a metal substrate to form first, second, and third waveguides, wherein the third waveguide has a common port at one end, and wherein the first and second waveguides comprise first and second ports oriented in opposite and collinear directions;
forming an E-plane septum in the third waveguide, wherein the E-plane septum is a full width E-plane septum across the width of the third waveguide and divides the third waveguide into a top wave guide portion and a bottom waveguide portion;
attaching a first cover over a first side of the metal substrate and attaching a second cover over a second side of the metal substrate to enclose portions of the first, second and third waveguides.

### Claim 15 (depends on 14)

The method of claim 14, further comprising:
stepping the top waveguide portion down such that at the second waveguide port the second waveguide has a height equal to the height of the third waveguide; and
stepping the bottom waveguide portion up such that at the first waveguide port the first waveguide has a height equal to the height of the third waveguide.

### Claim 16 (depends on 14)

The method of claim 14, further comprising forming a leading edge shape in the E-plane septum, wherein the leading edge shape includes at least one of: a taper, a corrugation, a linear taper, steps, a fillet, a miter, a spline.

### Claim 17 (depends on 14)

The method of claim 14, wherein the E-plane septum vertical offset is selected to achieve a desired power split between the first and second waveguides.

### Claim 18 (depends on 14)

The method of claim 14, wherein the power split ratio of the H-plane T-junction is related to the vertical offset of the E-plane septum within the third waveguide.

### Claim 19 (depends on 14)

The method of claim 14, wherein the power split ratio of the H-plane T-junction is unequal.

### Claim 20 (depends on 14)

The method of claim 14, wherein the power split ratio of the H-plane T-junction is equal.