# US 2013/0154739 A1 · Analog circuits having improved transistors, and methods therefor

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- Number: US 2013/0154739 A1
- Document ID: US20130154739A1
- Status: Published application
- Kind: A1
- Application number: 13/770,482
- Filed: 2013-02-19
- Published: 2013-06-20
- Earliest claimed: 2011-03-24
- Assignees: SuVolta, Inc.
- Inventors: Lawrence T. Clark; Scott E. Thompson
- Web page: https://patentgrep.com/patent/US20130154739A1

## CPC

- H03F 3/45179: {using MOSFET transistors as the active amplifying circuit (H03F3/45278 takes precedence)}
- H03F 3/45183: {Long tailed pairs (H03F3/4521, H03F3/45237 take precedence)}
- H03F 3/45273: {Mirror types}
- H03F 3/45: Differential amplifiers (differential sense amplifiers G11C7/062)
- H03F 3/45071: {with semiconductor devices only}
- H03F 2200/375: Circuitry to compensate the offset being present in an amplifier
- H03F 2203/45344: At least one of the AAC sub-circuits being a current mirror
- H03F 2203/45454: the CSC comprising biasing means controlled by the input signal
- H03F 2203/45506: the CSC comprising only one switch
- H03F 2203/45674: the LC comprising one current mirror
- H03F 2203/45676: the LC comprising one cascode current mirror
- H03F: AMPLIFIERS

## Abstract

Circuits are disclosed that may include a plurality of transistors having controllable current paths coupled between at least a first and second node, the transistors configured to generate an analog electrical output signal in response to an analog input value; wherein at least one of the transistors has a deeply depleted channel formed below its gate that includes a substantially undoped channel region formed over a relatively highly doped screen layer formed over a doped body region.

## Claims

### Claim 1

A circuit, comprising:
a plurality of transistors having controllable current paths configured to generate an electrical output signal in response to an input signal;
wherein a particular transistor of the plurality of transistors has an undoped channel region formed over a relatively highly doped first layer formed over a relative highly doped second layer formed over a doped body region;
wherein the particular transistor has a bias line coupled to the doped body region, the bias line operable to receive a forward bias voltage to lower a threshold voltage of the particular transistor.

### Claim 2 (depends on 1)

The circuit of claim 1, wherein the highly doped second layer defines an extent of a depletion region for the particular transistor and the highly doped first layer establishes an initial threshold voltage for the particular transistor.

### Claim 3 (depends on 1)

The circuit of claim 1, wherein the threshold voltage of the particular transistor is lowered as compared to at least one other transistor of the plurality of transistors.

### Claim 4 (depends on 1)

The circuit of claim 1, wherein the undoped channel region is in contact with the highly doped first layer.

### Claim 5 (depends on 1)

The circuit of claim 1, wherein the forward bias voltage is statically maintained during operation of the circuit.

### Claim 6 (depends on 1)

The circuit of claim 1, wherein the forward bias voltage is dynamically adjusted during circuit operation.

### Claim 7 (depends on 1)

The circuit of claim 1, wherein the undoped channel region, the highly doped first layer, and the highly doped second layer extend between a source and drain the particular transistor.

### Claim 8 (depends on 1)

The circuit of claim 1, wherein the highly doped second layer has a higher dopant concentration than the highly doped first layer which has a higher dopant concentration than the doped body region.

### Claim 9 (depends on 1)

The circuit of claim 1, wherein the undoped channel region, the highly doped first layer, and the highly doped second layer are distinct layers without being formed by halo or pocket implants.

### Claim 10 (depends on 1)

The circuit of claim 1, wherein the plurality of transistors form a current mirror circuit.

### Claim 11 (depends on 10)

The circuit of claim 10, wherein the current mirror circuit includes a reference transistor and a mirror transistor, the mirror transistor being the particular transistor.

### Claim 12 (depends on 11)

The circuit of claim 11, wherein the reference transistor is identical to the mirror transistor.

### Claim 13 (depends on 1)

The circuit of claim 1, wherein the plurality of transistors form a cascode type current mirror circuit.

### Claim 14 (depends on 13)

The circuit of claim 13, wherein the cascode type current mirror circuit has a first stage including a first reference transistor and a first mirror transistor and a cascode stage including a second reference transistor and a second mirror transistor, at least one of the first and second mirror transistors being the particular transistor.

### Claim 15 (depends on 1)

The circuit of claim 1, wherein the plurality of transistors form a Wilson type current mirror circuit.

### Claim 16 (depends on 15)

The circuit of claim 15, wherein the Wilson type current mirror circuit includes reference transistor, a mirror transistor, and an input stage with one or more input transistors, wherein any of the transistors in the Wilson type current mirror circuit is the particular transistor.

### Claim 17 (depends on 1)

The circuit of claim 1, wherein the plurality of transistors form a differential pair comparator circuit, the differential pair comparator circuit including first and second differential transistors, at least one of the first and second differential transistors being the particular transistor.

### Claim 18 (depends on 17)

The circuit of claim 17, wherein the differential pair comparator circuit is part of a differential amplifier circuit.

### Claim 19 (depends on 18)

The circuit of claim 18, wherein the differential amplifier circuit has a cascode configuration.