# US 2013/0154715 A1 · Bootstrapped Switch with a Highly Linearized Resistance > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2013/0154715 A1 - Document ID: US20130154715A1 - Status: Published application - Kind: A1 - Application number: 13/526,092 - Filed: 2012-06-18 - Published: 2013-06-20 - Earliest claimed: 2011-06-16 - Assignees: Supertex, Inc. - Inventors: Benedict C.K. Choy; James T. Walker; Ming-Yuan Yeh - Web page: https://patentgrep.com/patent/US20130154715A1 ## CPC - H03K 17/063: {in field-effect transistor switches} - H03K 17/163: {Soft switching} - H03K: PULSE TECHNIQUE (measuring pulse characteristics G01R; modulating sinusoidal oscillations with pulses H03C; transmission of digital information H04L; discriminator circuits detecting phase difference between two signals by counting or integrating cycles of oscillation H03D3/04; automatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses where the type of generator is irrelevant or unspecified H03L; coding, decoding or code conversion, in general H03M) ## Abstract Systems and methods are disclosed for operating a highly linearized resistance for a switch through use of a bootstrapped features. In one exemplary implementation, there is provided a method and system that implements a method for operating a circuit configured to provide a highly linearized resistance including receiving a signal via a bootstrapped switch, coupling the received signal to a gate if the received signal is high, receiving a signal via a switch control input coupled to a high impedance element. Moreover, the method includes coupling the high impedance element to the gate and turning off the switch via a gate turn off when the gate turn off pulls the gate low. ## Claims ### Claim 1 A circuit that is configured to provide a highly linearized resistance, the circuit comprising: a switch having an input, output, and a gate wherein the switch is configured in a bootstrap configuration; a high impedance element having a first and a second terminal, the first terminal coupled to the gate; a gate turn off element having a first terminal and a second terminal, the first terminal coupled to the gate and the first terminal of the high impedance element; a switch control input coupled to the second terminal of the high impedance element; wherein the switch is configured to turn on and couple a signal back to the gate through its output end when the signal rises on the input end when in use. ### Claim 2 (depends on 1) The circuit of claim 1 wherein the high impedance element is a diode. ### Claim 3 (depends on 1) The circuit of claim 1 wherein the gate turnoff is a Field Effect Transistor. ### Claim 4 (depends on 1) The circuit of claim 1 wherein the gate turnoff is a bipolar acting as a switch, the gate turnoff having a drain to the gate and source to ground. ### Claim 5 (depends on 1) The circuit of claim 1 further comprising a clamping diode coupled to the gate and configured to limit the gate swing of the switch. ### Claim 6 (depends on 5) The circuit of claim 5 wherein the diode breakdown is able to be configured. ### Claim 7 (depends on 1) The circuit of claim 1 wherein the gate turn off is a transistor. ### Claim 8 (depends on 5) The circuit of claim 5 wherein the high impedance element includes at least two diodes in series, the diodes being in parallel with a resistor. ### Claim 9 A circuit that is configured to provide a highly linearized resistance, the circuit comprising: a switch having an input, output, and a gate wherein the switch is configured in a bootstrap configuration; a high impedance element having a first and a second terminal, the first terminal coupled to the gate; a gate turn off element having a first terminal and a second terminal, the first terminal coupled to the gate and the first terminal of the high impedance element; a switch control input coupled to the second terminal of the high impedance element; wherein the switch is configured to: receive a signal via a bootstrapped switch; couple the received signal to a gate if the received signal is high; receive a signal via a switch control input coupled to a high impedance element, wherein the high impedance element is in further coupled to the gate; turn off the switch via a gate turn off when the gate turn off pulls the gate low. ### Claim 10 (depends on 9) The circuit of claim 9 wherein the high impedance element is a diode. ### Claim 11 (depends on 9) The circuit of claim 9 wherein the gate turnoff is a Field Effect Transistor. ### Claim 12 (depends on 9) The circuit of claim 9 further comprising a clamping diode coupled to the gate and configured to limit the gate swing of the switch. ### Claim 13 (depends on 9) The circuit of claim 9 wherein the high impedance element includes multiple diodes in parallel with a resistor. ### Claim 14 A method of operating a circuit configured to provide a highly linearized resistance comprising: receiving a signal via a bootstrapped switch; coupling the received signal to a gate if the received signal is high; receiving a signal via a switch control input coupled to a high impedance element, wherein the high impedance element is in further coupled to the gate; turning off the switch via a gate turn off when the gate turn off pulls the gate low. ### Claim 15 (depends on 14) The method of claim 14 wherein the high impedance element is at least one diode. ### Claim 16 (depends on 14) The method of claim 14 wherein the gate turnoff is a Field Effect Transistor. ### Claim 17 (depends on 14) The method of claim 14 wherein the gate turnoff is a bipolar acting as a switch, the gate turnoff having a drain to the gate and source to ground. ### Claim 18 (depends on 14) The method of claim 14 further comprising a clamping diode in communication with the gate and configured to limit the gate swing of the switch. ### Claim 19 (depends on 14) The method of claim 14 wherein the gate turn off is a transistor. ### Claim 20 (depends on 14) The method of claim 14 wherein the high impedance element includes multiple diodes in parallel with a resistor.