# US 2013/0154618 A1 · Integrated magnetic field sensor and method for a measurement of the position of a ferromagnetic workpiece with an integrated magnetic field sensor > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2013/0154618 A1 - Document ID: US20130154618A1 - Status: Published application - Kind: A1 - Application number: 13/720,896 - Filed: 2012-12-19 - Published: 2013-06-20 - Earliest claimed: 2011-12-19 - Assignees: Micronas GmbH - Inventors: Klaus HEBERLE - Web page: https://patentgrep.com/patent/US20130154618A1 ## CPC - H10D 48/40: Devices controlled by magnetic fields - G01B 7/00: Measuring arrangements characterised by the use of electric or magnetic techniques - G01B 7/003: {for measuring position, not involving coordinate determination (coordinate measuring G01B7/004)} - G01D 5/147: {influenced by the movement of a third element, the position of Hall device and the source of magnetic field being fixed in respect to each other} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - G01B: MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS - G01D: MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR ## Abstract An integrated magnetic field sensor, having a semiconductor body with a surface and a rear surface, and a metal carrier, with a front and a rear, wherein the rear of the semiconductor body is connected to the front of the metal carrier in a non-positive manner, and a Hall sensor, embodied on the surface of the semiconductor body, with a main extension surface, and a magnet with a first magnetic pole embodied along a first surface, which first magnetic pole has a central axis embodied in a perpendicular manner on the first surface, wherein the metal carrier, the magnet and the semiconductor body are arranged in a common housing and precisely one or at least one Hall sensor is arranged in the housing. ## Claims ### Claim 1 An integrated magnetic field sensor comprising: a semiconductor body with a surface and a rear surface; a metal carrier with a front and a rear, the semiconductor body being connectable by the rear surface to the front of the metal carrier in a non-positive manner; a Hall sensor arranged on the surface of the semiconductor body, with a main extension surface; a magnet with a first magnetic pole arranged along a first surface and a central axis arranged in a perpendicular manner on the first surface, wherein the metal carrier, the magnet and the semiconductor body are arranged in a common housing and precisely one or at least one Hall sensor is arranged in the housing, wherein the first surface of the magnet is arranged perpendicular to the main extension surface of the only Hall sensor, wherein the central axis runs parallel to the main extension plane of the Hall sensor, wherein the central axis passes in a perpendicular manner through a normal of the main extension surface, the normal standing in a centroid of the main extension surface, wherein field lines of the magnet run essentially parallel to the main extension surface of the Hall sensor so that a Hall voltage is generated when a part of the magnetic field lines are deflected by a ferromagnetic component perpendicular to the main extension plane of the Hall sensor, and wherein the magnet is arranged on the front of the metal carrier. ### Claim 2 (depends on 1) The integrated magnetic field sensor according to claim 1, wherein, with the deflection of the magnetic field lines, the Hall voltage is increased. ### Claim 3 (depends on 1) The integrated magnetic field sensor according to claim 1, wherein the Hall sensor has a lateral surface arranged orthogonally to the main extension plane, and wherein the central axis of the magnet is arranged on the lateral surface in a perpendicular manner. ### Claim 4 (depends on 1) The integrated magnetic field sensor according to claim 1, wherein the Hall sensor is a 2-dimensional or 3-dimensional Hall sensor. ### Claim 5 (depends on 4) The integrated magnetic field sensor according to claim 4, wherein the Hall sensor is in a second dimension to the first pole of the magnet such that a Hall voltage is generated even without the ferromagnetic component. ### Claim 6 (depends on 1) The integrated magnetic field sensor according to claim 1, wherein the Hall sensor is a Hall plate. ### Claim 7 A method for a determination of a position of a ferromagnetic component, the method comprising: providing an integrated magnetic field sensor, the integrated magnetic field sensor comprising: a semiconductor body with a surface and a rear surface; a metal carrier with a front and a rear, wherein the semiconductor body is connectable by the rear surface to the front of the metal carrier in a non-positive manner; a Hall sensor arranged on the surface of the semiconductor body, with a main extension surface; a magnet with a first magnetic pole arranged along a first surface and a central axis arranged in a perpendicular manner on the first surface; arranging the metal carrier, the magnet and the semiconductor body in a common housing; arranging precisely one or at least one Hall sensor in the housing; arranging the first surface of the magnet perpendicular to the main extension surface of the Hall sensor, the central axis running parallel to the main extension plane of the Hall sensor, the central axis passing in a perpendicular manner through a normal of the main extension surface in a centroid of the main extension surface, field lines of the magnet running essentially parallel to the main extension surface of the Hall sensor so that a Hall voltage is generated when a part of the magnetic field lines are deflected by a ferromagnetic component perpendicular to the main extension plane of the Hall sensor; and arranging the magnet on a front of the metal carrier. ### Claim 8 (depends on 7) The method according to claim 7, wherein a Hall voltage is generated exclusively when the magnetic field lines are deflected. ### Claim 9 (depends on 7) The method according to claim 7, wherein the Hall voltage is increased exclusively when the magnetic field lines are deflected.