# US 2013/0154129 A1 · Anisotropic conductive film and semiconductor device bonded by the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2013/0154129 A1 - Document ID: US20130154129A1 - Status: Published application - Kind: A1 - Application number: 13/718,104 - Filed: 2012-12-18 - Published: 2013-06-20 - Earliest claimed: 2011-12-19 - Assignees: Cheil Industries Inc. - Inventors: Kyung Il SUL; Dong Seon UH; Nam Ju KIM; Kyoung Soo PARK; Young Woo PARK; Joon Mo SEO; Arum YU; Hyun Min CHOI - Web page: https://patentgrep.com/patent/US20130154129A1 ## CPC - C09J 163/00: Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins - C08G 59/226: {Mixtures of di-epoxy compounds} - C08G 59/24: carbocyclic - C08G 59/687: {containing sulfur} - C08L 63/00: Compositions of epoxy resins; Compositions of derivatives of epoxy resins - C09D 5/24: Electrically-conducting paints {(conductive materials H01B1/00)} - C09J 9/02: Electrically-conducting adhesives - H01B 1/20: Conductive material dispersed in non-conductive organic material {(organic macromolecular compounds or compositions C08)} - H10W 74/40: characterised by their materials - C08L 2205/02: containing two or more polymers of the same C08L -group - H10W 72/325: {Die-attach connectors having a filler embedded in a matrix} - H10W 72/351: {Materials of die-attach connectors} - H10W 72/352: {comprising metals or metalloids, e.g. solders} - H10W 72/354: {comprising polymers} - C09J: ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES (preparation of glue or gelatine C09H) - C08G: MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS - C08L: COMPOSITIONS OF MACROMOLECULAR COMPOUNDS (compositions based on polymerisable monomers C08F, C08G; artificial filaments or fibres D01F; textile treating compositions D06) - C09D: COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR (cosmetics A61K; processes for applying liquids or other fluent materials to surfaces, in general, B05D; staining wood B27K5/02; glazes or vitreous enamels C03C; natural resins, French polish, drying-oils, driers, turpentine, per se, C09F; polishing compositions other than French polish, ski waxes C09G; adhesives or use of materials as adhesives C09J; materials for sealing or packing joints or covers C09K3/10; materials for stopping leaks C09K3/12; processes for the electrolytic or electrophoretic production of coatings C25D) - H01B: CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F1/00; waveguides H01P {; printed circuits H05K}) - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor device bonded by an anisotropic conductive film and an anisotropic conductive film composition, the anisotropic conductive film including a reactive monomer having an epoxy equivalent weight of about 120 to about 180 g/eq; a hydrogenated epoxy resin; and a sulfonium cation curing catalyst. ## Claims ### Claim 1 A semiconductor device bonded by an anisotropic conductive film, the anisotropic conductive film comprising: a reactive monomer having an epoxy equivalent weight of about 120 to about 180 g/eq; a hydrogenated epoxy resin; and a sulfonium cation curing catalyst. ### Claim 2 (depends on 1) The semiconductor device as claimed in claim 1, wherein the anisotropic conductive film includes: about 1 to about 20 parts by weight of the reactive monomer having an epoxy equivalent weight of about 120 to about 180 g/eq; about 5 to about 50 parts by weight of the hydrogenated epoxy resin; and about 0.1 to about 10 parts by weight of the sulfonium cation curing catalyst, all parts by weight being based on 100 parts by weight of the anisotropic conductive film in terms of solid content. ### Claim 3 (depends on 1) The semiconductor device as claimed in claim 1, wherein the anisotropic conductive film further includes a binder resin and conductive particles. ### Claim 4 (depends on 3) The semiconductor device as claimed in claim 3, wherein the binder resin includes at least one selected from the group of a polyimide resin, a polyamide resin, a phenoxy resin, an epoxy resin, a polymethacrylate resin, a polyacrylate resin, a polyurethane resin, an acrylate modified urethane resin, a polyester resin, a polyester urethane resin, a polyvinyl butyral resin, a styrene-butylene-styrene resin and epoxy modifications thereof, a styrene-ethylene-butylene-styrene resin and modifications thereof, and acrylonitrile butadiene rubber and hydrogenated compounds thereof. ### Claim 5 (depends on 3) The semiconductor device as claimed in claim 3, wherein the anisotropic conductive film includes: about 1 to about 20 parts by weight of the reactive monomer having an epoxy equivalent weight of about 120 to about 180 g/eq; about 5 to about 50 parts by weight of the hydrogenated epoxy resin; about 0.1 to about 10 parts by weight of the sulfonium cation curing catalyst; about 20 to about 60 parts by weight of the binder resin; and about 0.1 to about 30 parts by weight of the conductive particles, all parts by weight being based on 100 parts by weight of the anisotropic conductive film in terms of solid content. ### Claim 6 (depends on 1) The semiconductor device according as claimed in claim 1, wherein the hydrogenated epoxy resin has an epoxy equivalent weight of about 150 to about 1,300 g/eq. ### Claim 7 (depends on 1) The semiconductor device according as claimed in claim 1, wherein the hydrogenated epoxy resin includes a hydrogenated bisphenol A epoxy resin. ### Claim 8 (depends on 7) The semiconductor device as claimed in claim 7, wherein the hydrogenated bisphenol A epoxy resin includes at least one selected from the group of a hydrogenated bisphenol A epoxy monomer represented by Formula 2, below, or a hydrogenated bisphenol A epoxy oligomer represented by Formula 3, below, wherein, in Formula 3, n is an integer of about 1 to about 13. ### Claim 9 (depends on 1) The semiconductor device as claimed in claim 1, wherein the reactive monomer includes at least one selected from the group of a reactive monomer having at least two glycidyl groups, a reactive monomer having a monoaromatic structure, and a reactive monomer having an alicyclic structure. ### Claim 10 (depends on 9) The semiconductor device as claimed in claim 9, wherein the reactive monomer includes at least one selected from the group of resorcinol diglycidyl ether, 1,4-cyclohexane dimethanol diglycidyl ether, dicyclopentadiene dioxide, 2-((4-(2-oxiranylmethoxy)phenoxy)methyl)oxirane, diglycidyl 1,2-cyclohexanedicarboxylate, diglycidyl terephthalate, and diglycidyl o-phthalate. ### Claim 11 (depends on 1) The semiconductor device as claimed in claim 1, wherein the sulfonium cation curing catalyst includes sulfonium borate. ### Claim 12 (depends on 11) The semiconductor device as claimed in claim 11, wherein the sulfonium borate includes a compound represented by Formula 1: wherein: R1 is selected from the group of hydrogen, a methyl group, an ethyl group, R4 being selected from the group of an aromatic hydrocarbon, a substituted aromatic hydrocarbon, an aliphatic hydrocarbon, a substituted aliphatic hydrocarbon, a carboxyl group, and a sulfonyl group; R2 is selected from the group of toluene, phenol, benzene, o-xylene, and substituted or unsubstituted naphthalene; R3 is selected from the group of a methyl group, an ethyl group, a propyl group, and a butyl group; and X is fluorine. ### Claim 13 (depends on 12) The semiconductor device as claimed in claim 12, wherein R2 is methylnaphthalene or dimethylnaphthalene. ### Claim 14 A semiconductor device bonded by a rapid low-temperature curable anisotropic conductive film, the rapid low-temperature curable anisotropic conductive film comprising: a reactive monomer having an epoxy equivalent weight of about 120 to about 180 g/eq, and a sulfonium cation curing catalyst, wherein the rapid low-temperature curable anisotropic conductive film has a curing rate of about 80% or more when cured at 150 to 170° C. for 5 seconds. ### Claim 15 (depends on 14) The semiconductor device as claimed in claim 14, wherein the rapid low-temperature curable anisotropic conductive film further includes a hydrogenated epoxy resin. ### Claim 16 (depends on 14) The semiconductor device as claimed in claim 14, wherein the reactive monomer includes at least one selected from the group of a reactive monomer having at least two glycidyl groups, a reactive monomer having a monoaromatic structure, and a reactive monomer having an alicyclic structure. ### Claim 17 (depends on 14) The semiconductor device as claimed in claim 14, wherein the reactive monomer includes at least one selected from the group of resorcinol diglycidyl ether, 1,4-cyclohexane dimethanol diglycidyl ether, dicyclopentadiene dioxide, 2-((4-(2-oxiranylmethoxy)phenoxy)methyl)oxirane, diglycidyl 1,2-cyclohexanedicarboxylate, diglycidyl terephthalate, and diglycidyl o-phthalate.