# US 2013/0154093 A1 · Anisotropic conductive film composition, anisotropic conductive film, and semiconductor device bonded by the same

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2013/0154093 A1
- Document ID: US20130154093A1
- Status: Published application
- Kind: A1
- Application number: 13/710,728
- Filed: 2012-12-11
- Published: 2013-06-20
- Earliest claimed: 2011-12-14
- Assignees: Cheil Industries Inc.
- Inventors: Arum YU; Nam Ju KIM; Kyoung Soo PARK; Young Woo PARK; Joon Mo SEO; Kyung Il SUL; Dong Seon UH; Hyun Min CHOI
- Web page: https://patentgrep.com/patent/US20130154093A1

## CPC

- C09J 7/10: without carriers
- C09J 9/02: Electrically-conducting adhesives
- H01B 1/20: Conductive material dispersed in non-conductive organic material {(organic macromolecular compounds or compositions C08)}
- H01B 1/22: the conductive material comprising metals or alloys
- H10W 20/4473: {Conductive organic materials, e.g. conductive adhesives or conductive inks}
- C08K 3/08: Metals
- C08K 5/41: Compounds containing sulfur bound to oxygen
- C08K 9/02: Ingredients treated with inorganic substances
- C09J 2203/326: for bonding electronic components such as wafers, chips or semiconductors
- C09J 2301/314: the adhesive layer and/or the carrier being conductive
- C09J 2301/408: additives as essential feature of the adhesive layer
- C09J 2463/00: Presence of epoxy resin
- H10W 72/325: {Die-attach connectors having a filler embedded in a matrix}
- H10W 72/352: {comprising metals or metalloids, e.g. solders}
- H10W 72/353: {not comprising solid metals or solid metalloids, e.g. ceramics}
- H10W 72/354: {comprising polymers}
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- C09J: ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES (preparation of glue or gelatine C09H)
- H01B: CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F1/00; waveguides H01P {; printed circuits H05K})
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- C08K: Use of inorganic or non-macromolecular organic substances as compounding ingredients (paints, inks, varnishes, dyes, polishes, adhesives C09)

## Abstract

An anisotropic conductive film composition for bonding an electronic device may include a hydrogenated bisphenol A epoxy monomer represented by Formula 1 or a hydrogenated bisphenol A epoxy oligomer represented by Formula 2: where n may be an integer from 1 to about 50.

## Claims

### Claim 1

A semiconductor device bonded by an anisotropic conductive film composition, the anisotropic conductive film composition comprising:
a first component that includes one or more selected from the group of a hydrogenated bisphenol A epoxy monomer represented by Formula 1 and a hydrogenated bisphenol A epoxy oligomer represented by Formula 2:
wherein n is an integer from 1 to about 50;
a sulfonium curing agent;
a binder resin; and
conductive particles.

### Claim 2 (depends on 1)

The semiconductor device as claimed in claim 1, wherein the first component includes the hydrogenated bisphenol A epoxy monomer represented by Formula 1 and the hydrogenated bisphenol A epoxy oligomer represented by Formula 2.

### Claim 3 (depends on 1)

The semiconductor device as claimed in claim 1, wherein the anisotropic conductive film composition includes:
about 1 to about 50 parts by weight of the first component;
about 1 to about 20 parts by weight of the sulfonium curing agent;
about 20 to about 60 parts by weight of the binder resin; and
about 10 to about 50 parts by weight of the conductive particles;
based on 100 parts by weight of the anisotropic conductive film composition.

### Claim 4 (depends on 1)

The semiconductor device as claimed in claim 1, wherein the sulfonium curing agent includes an aromatic sulfonium salt.

### Claim 5 (depends on 4)

The semiconductor device as claimed in claim 4, wherein the aromatic sulfonium salt is represented by Formula 3:
wherein:
R1 is selected from the group of hydrogen, an alkyl group, an alkoxy group, a methoxy carbonyl group, and an ethoxy carbonyl group;
R2 is selected from the group of a methyl group, an ethyl group, a propyl group, and a butyl group; and
R3 is selected from the group of a nitrobenzyl group, a dinitrobenzyl group, a trinitrobenzyl group, and a naphthylmethyl group.

### Claim 6 (depends on 1)

The semiconductor device as claimed in claim 1, wherein the sulfonium curing agent includes a sulfonium salt represented by Formula 4:
wherein R1 is selected from the group of a benzyl group, a substituted benzyl group, a phenacyl group, a substituted phenacyl group, an allyl group, a substituted allyl group, an alkoxy group, a substituted alkoxy group, an aryloxy group, and a substituted aryloxy group;
R2 and R3 each independently are selected from the group of a benzyl group, a substituted benzyl group, a phenacyl group, a substituted phenacyl group, an allyl group, a substituted allyl group, an alkoxy group, a substituted alkoxy group, an aryloxy group, a substituted aryloxy group, fluorine, chlorine, bromine, a hydroxyl group, a carboxyl group, a mercapto group, a cyano group, a nitro group, a C1 to C18 straight, branched, or cyclic alkyl group, and a substituted C1 to C18 straight, branched, or cyclic alkyl group; and
R1 and R2, R1 and R3, or R2 and R3 optionally are combined with each other into a cyclic structure.

### Claim 7 (depends on 4)

The semiconductor device as claimed in claim 4, wherein the aromatic sulfonium salt is represented by Formula 5:
wherein:
R1 is selected from the group of a hydroxyl group,
R5O—,
R5 is selected from the group of an aromatic hydrocarbon, a substituted aromatic hydrocarbon, an aliphatic hydrocarbon, a substituted aliphatic hydrocarbon, a carboxyl group, a sulfonyl group, and combinations thereof; and
R2 is selected from the group of hydrogen and C1 to C6 alkyl groups.

### Claim 8 (depends on 1)

The semiconductor device as claimed in claim 1, wherein the sulfonium curing agent includes:

### Claim 9 (depends on 1)

The semiconductor device as claimed in claim 1, wherein the binder resin includes an epoxy resin having at least two epoxy groups and having an epoxy equivalent weight of about 90 g/eq to about 5,000 g/eq.

### Claim 10 (depends on 1)

The semiconductor device as claimed in claim 1, wherein the binder resin has a weight average molecular weight of about 5,000 g/mol to about 150,000 g/mol.

### Claim 11 (depends on 1)

The semiconductor device as claimed in claim 1, wherein the binder resin includes a fluorene epoxy resin.

### Claim 12 (depends on 1)

The semiconductor device as claimed in claim 1, wherein the conductive particles include at least one selected from the group of metal particles and organic or inorganic particles coated with a metal.

### Claim 13 (depends on 1)

The semiconductor device as claimed in claim 1, wherein the anisotropic conductive film composition provides a glass transition temperature of about 120° C. or more.

### Claim 14 (depends on 1)

The semiconductor device as claimed in claim 1, wherein the anisotropic conductive film composition is for a chip-on-glass (COG) device.

### Claim 15 (depends on 1)

An semiconductor device, comprising:
a wiring substrate, the wiring substrate including glass; and
an electrical element bonded to the wiring substrate by an anisotropic conductive film that is a cured product of the anisotropic conductive film composition as according to claim 1.

### Claim 16

A semiconductor device bonded by an anisotropic conductive film formed from a composition, the composition comprising:
a hydrogenated bisphenol A epoxy monomer represented by Formula 1 or a hydrogenated bisphenol A epoxy oligomer represented by Formula 2:
wherein n is an integer from 1 to about 50,
the anisotropic conductive film having:
a curing rate of about 70% or more when cured at about 150 to about 170° C. for about 5 to about 10 seconds, and
a glass transition temperature of about 120° C. or more.

### Claim 17 (depends on 16)

The semiconductor device as claimed in claim 16, wherein the curing rate of the anisotropic conductive film is about 70% or more when cured at about 150° C. for about 5 to 10 seconds.

### Claim 18 (depends on 16)

The semiconductor device as claimed in claim 16, wherein the anisotropic conductive film bonds a chip-on-glass (COG) device.