# US 2013/0154084 A1 · Semiconductor module

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- Number: US 2013/0154084 A1
- Document ID: US20130154084A1
- Status: Published application
- Kind: A1
- Application number: 13/819,209
- Filed: 2010-09-02
- Published: 2013-06-20
- Earliest claimed: 2010-09-02
- Assignees: Toyota Jidosha Kabushiki Kaisha
- Inventors: Takuya Kadoguchi; Yoshikazu Suzuki; Masaya Kaji; Kiyofumi Nakajima; Tatsuya Miyoshi; Takanori Kawashima; Tomomi Okumura
- Web page: https://patentgrep.com/patent/US20130154084A1

## CPC

- H10W 40/60: Securing means for detachable heating or cooling arrangements, e.g. clamps
- G01N 29/07: by measuring propagation velocity or propagation time of acoustic waves
- H10W 40/255: {having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates}
- H10W 40/47: by flowing liquids, e.g. forced water cooling
- H10W 40/611: {Bolts or screws}
- H10W 40/778: {in encapsulations}
- H10W 70/424: {Cross-sectional shapes (H10W70/481 takes precedence)}
- H10W 72/60: Strap connectors, e.g. thick copper clips for grounding of power devices
- H10W 74/114: {by a substrate and the encapsulations}
- G01N 2291/044: Internal reflections (echoes), e.g. on walls or defects
- G01N 2291/2697: Wafer or (micro)electronic parts
- H10W 72/07336: {Soldering or alloying}
- H10W 72/07636: {Soldering or alloying}
- H10W 72/07653: {changes in shapes}
- H10W 72/5524: {comprising aluminium [Al]}
- H10W 72/652: {comprising metals or metalloids, e.g. silver}
- H10W 72/871: {Bond wires and strap connectors}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 90/00: Package configurations
- H10W 90/736: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W 90/764: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)

## Abstract

A semiconductor module includes a semiconductor device; a metal plate portion that includes a first surface on a side of the semiconductor device and has a fastening portion at an end thereof; a molded portion that is formed by molding a resin on the semiconductor device and the metal plate portion, a cooling plate portion that is a separate member from the metal plate portion, is provided on a side opposite to the first surface on the side of the semiconductor device, and includes fins on a side opposite to the side of the metal plate portion; wherein the fastening portion of the metal plate portion is exposed out of the molded portion, and the cooling plate portion includes a fastening portion at a position that corresponds to a position of the fastening portion of the metal plate portion.

## Claims

### Claim at position 1

1-11. (canceled)

### Claim 12

A semiconductor module comprising:
a semiconductor device;
a metal plate portion that includes a first surface on a side of the semiconductor device;
a molded portion that is formed by molding a resin on the semiconductor device and the metal plate portion;
a cooling plate portion that is a separate member from the metal plate portion, is provided on a side opposite to the first surface on the side of the semiconductor device, and includes fins on a side opposite to the side of the metal plate portion;
a heat sink part that is provided between the semiconductor device and the first surface of the metal plate portion on the side of the semiconductor device; and
an insulating material that is provided between the heat sink part and the first surface of the metal plate portion on the side of the semiconductor device;
the heat sink part and the insulating material are disposed in the molded portion
the insulating material includes an end that extends outwardly with respect to an end of the heat sink part, and
the fins of the metal plate portion are formed at a center side with respect to the end of the heat sink part.

### Claim 13

A semiconductor module comprising:
a semiconductor device;
a metal plate portion that includes a first surface on a side of the semiconductor device and has a fastening portion at an end thereof;
a molded portion that is formed by molding a resin on the semiconductor device and the metal plate portion; and
a cooling plate portion that is a separate member from the metal plate portion, is provided on a side opposite to the first surface on the side of the semiconductor device, and includes fins on a side opposite to the side of the metal plate portion;
wherein the fastening portion of the metal plate portion is exposed out of the molded portion, and the cooling plate portion includes a fastening portion at a position that corresponds to a position of the fastening portion of the metal plate portion, and
the metal plate portion and the cooling plate portion are fastened to a channel forming member at the fastening portion of metal plate portion and the fastening portion of cooling plate portion, the channel forming member forming a cooling medium channel in which a cooling medium flows.

### Claim 14 (depends on 12)

The semiconductor module of claim 12, wherein a thickness of the metal plate portion is configured such that, when ultrasonic waves are entered from the side of the metal plate portion of the semiconductor module with ultrasonic test equipment, an internal echo component, which is reflected at a boundary surface between the metal plate portion and the insulating material, and an internal echo component, which is reflected at a boundary surface between the insulating material and the heat sink part are not substantially detected in a gate range that is set for detecting reflected waves to be measured.

### Claim 15 (depends on 14)

The semiconductor module of claim 14, wherein the semiconductor device is provided on the heat sink part via a solder layer, and
the gate range is set based on
a arrival time of a first reflected wave to be measured, the first reflected wave directly returning after entering from a second surface of the metal plate portion on the side of the cooling plate portion and being reflected at a boundary surface between the solder layer and the heat sink part, and
a arrival time of a second reflected wave to be measured, the first reflected wave directly returning after entering from the second surface of the metal plate portion on the side of the cooling plate portion and being reflected at a boundary surface between the solder layer and the heat sink part.

### Claim 16 (depends on 12)

The semiconductor module of claim 12, wherein grease is applied between the metal plate portion and the cooling plate portion.

### Claim 17 (depends on 12)

The semiconductor module of claim 12, wherein the molded portion includes an extended side portion at a region of the metal plate portion where the fastening portion does not exist, the extended side portion extending to be coplanar with a second surface of the metal plate portion on the side of the cooling plate portion such that it is brought into intimate contact with a side surface of the cooling plate portion.

### Claim 18 (depends on 12)

The semiconductor module of claim 12, further comprising: a wiring member that is connected to the semiconductor device,
wherein the wiring member is disposed within the molded portion such that a terminal portion of the wiring member is exposed out of the molded portion, and
the molded portion includes a rib portion at a side portion region thereof where the terminal portion of the wiring member is exposed, the rib portion projecting outwardly with respect a neighboring side portion region.

### Claim 19 (depends on 12)

The semiconductor module of claim 12, wherein the metal plate portion includes fastening portions provided at opposite ends thereof in a first direction,
the fastening portions of the metal plate portion are formed in a region that projects in the first direction with respect to another region in the corresponding ends of the metal plate portion,
the molded portion is formed at a center side of the metal plate portion with respect to the fastening portions of the metal plate portion, and
the fastening portion of one end of the metal plate portion is formed at a position that has an offset in a second direction with respect to the fastening portion of another end of the metal plate portion, the second direction being perpendicular to the first direction.

### Claim 20 (depends on 12)

The semiconductor module of claim 12, wherein the metal plate portion includes fastening portions provided at opposite ends thereof in a first direction,
the fastening portions of the metal plate portion are formed to have a thickness smaller than a center portion of the metal plate portion, and
the fastening portion of one end of the metal plate portion in the first direction is coplanar with the first surface of the metal plate portion on the side of the semiconductor device, and the fastening portion of another end of the metal plate portion in the first direction is coplanar with a second surface of the metal plate portion on the side of the cooling plate portion.

### Claim 21 (depends on 12)

A hybrid system comprising the semiconductor module of claim 12.