# US 2013/0154065 A1 · Process for treating a substrate using a luminous flux of determined wafelength, and corresponding substrate

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- Number: US 2013/0154065 A1
- Document ID: US20130154065A1
- Status: Published application
- Kind: A1
- Application number: 13/818,235
- Filed: 2011-09-05
- Published: 2013-06-20
- Earliest claimed: 2010-09-10
- Assignees: Soitec
- Inventors: Michel Bruel
- Web page: https://patentgrep.com/patent/US20130154065A1

## CPC

- H10D 62/60: Impurity distributions or concentrations
- H10D 62/124: {Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions}
- H10P 34/42: with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20)
- H10P 50/00: Etching of wafers, substrates or parts of devices
- H10P 54/52: {by cleaving}
- H10P 90/1916: {with separation or delamination along an ion implanted layer, e.g. Smart-cut}
- H10P 95/11: {Separation of active layers from substrates}
- H10W 10/181: {Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A substrate is treated by means of at least one pulse of a luminous flux of determined wavelength. The substrate comprises an embedded layer that absorbs the luminous flux independently of the temperature. The embedded layer is interleaved between a first treatment layer, layer and a second treatment layer. The first treatment layer has a coefficient of absorption of luminous flux that is low at ambient temperature and grows as the temperature rises. The luminous flux may be applied in several places of the surface of the first layer to heat regions of the embedded layer and generate a propagating thermal front in the first layer opposite the heated regions of the embedded layer, which generate constraints within the second layer.

## Claims

### Claim at position 1

-15. (canceled)

### Claim 16

A method of treating a substrate using a luminous flux of determined wavelength, comprising:
providing a substrate comprising an embedded layer interleaved between a first layer and a second layer, the embedded layer configured to absorb the luminous flux independently of a temperature of the embedded layer, the first layer having a low coefficient of absorption of the luminous flux at ambient temperature, the coefficient of absorption rising as a temperature of the first layer rises; and
applying the luminous flux to the substrate through several places on a surface of the first layer, the applied luminous flux heating regions of the embedded layer and generating a propagating thermal front resulting in heated zones in the first layer in the form of expanding thermal pillars, the expanding thermal pillars generating constraints within the second layer resulting in structural defects in a region of the second layer, the structural defects weakening the region of the second layer.

### Claim 17 (depends on 16)

The method of claim 16, further comprising fracturing the second layer at or near the weakened region of the second layer.

### Claim 18 (depends on 17)

The method of claim 17, further comprising subjecting the substrate to at least one of a mechanical treatment and a chemical treatment prior to applying the luminous flux to assist the fracturing of the second layer at or near the weakened region of the second layer.

### Claim 19 (depends on 16)

The method of claim 16, further comprising forming an indentation on a periphery of the substrate substantially at the level of an interface between the second layer and the embedded layer.

### Claim 20 (depends on 16)

The method of claim 16, further comprising, prior to applying the luminous flux, embrittling at least one of the first layer, the embedded layer, and the second layer proximate an interface between the embedded layer and the first layer or an interface between the embedded layer and the second layer.

### Claim 21 (depends on 20)

The method of claim 20, wherein embrittling at least one of the first layer, the embedded layer, and the second layer comprises at least one of implanting atom species into the substrate, thermally treating the substrate, porosification of the substrate, and formation of an intermediate layer in one of the first layer and the second layer, the intermediate layer having a lattice parameter different from a lattice parameter of a remainder of the one of the first layer and the second layer in which the intermediate layer is disposed.

### Claim 22 (depends on 16)

The method of claim 16, further comprising selecting the substrate such that the embedded layer is a continuous embedded layer.

### Claim 23 (depends on 16)

The method of claim 16, further comprising selecting the substrate such that the embedded layer is a discontinuous embedded layer having a plurality of discrete regions.

### Claim 24 (depends on 16)

The method of claim 16, further comprising selecting the substrate such that the embedded layer comprises a doped semiconductor material.

### Claim 25 (depends on 24)

The method of claim 24, further comprising selecting the substrate such that the doped semiconductor material comprises doped silicon.

### Claim 26 (depends on 16)

The method of claim 16, wherein a ratio of a thickness of the second layer to a thickness of the first layer is between 1/2 and 1/100.

### Claim 27 (depends on 16)

The method of claim 16, wherein applying the luminous flux to the substrate comprises applying laser radiation to the substrate.

### Claim 28 (depends on 27)

The method of claim 27, wherein applying laser radiation to the substrate comprises applying infrared laser radiation to the substrate.

### Claim 29 (depends on 28)

The method of claim 28, further comprising selecting the infrared laser radiation to have a wavelength on the order of about 10.6 micrometers.

### Claim 30 (depends on 16)

The method of claim 16, further comprising forming the applied luminous flux to have a cylindrical or tapered form.

### Claim 31 (depends on 16)

The method of claim 16, further comprising progressing the applied luminous flux along a surface of the first layer.

### Claim 32 (depends on 16)

The method of claim 16, further comprising selecting the substrate such that the embedded layer has a thermal expansion coefficient greater than a thermal expansion coefficient of the first layer and the second layer.

### Claim 33

A substrate, comprising:
a first layer;
a second layer; and
an embedded layer interleaved between the first layer and the second layer;
wherein the embedded layer has a composition configured to absorb luminous flux of a determined wavelength independent of a temperature of the embedded layer, the first layer has a low coefficient of absorption of the luminous flux at ambient temperature, the coefficient of absorption rising as a temperature of the first layer rises, a ratio of a thickness of the second layer to a thickness of the first layer being between about 1/2 and about 1/100.

### Claim 34 (depends on 33)

The substrate of claim 33, wherein each of the first layer, the second layer, and the embedded layer comprises silicon.

### Claim 35 (depends on 34)

The substrate of claim 34, wherein each of the first layer and the embedded layer comprises doped silicon, a dopant concentration in the first layer being lower than a dopant concentration in the embedded layer.