# US 2013/0154064 A1 · Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2013/0154064 A1 - Document ID: US20130154064A1 - Status: Published application - Kind: A1 - Application number: 13/811,447 - Filed: 2011-08-29 - Published: 2013-06-20 - Earliest claimed: 2011-08-29 - Assignees: Shindengen Electric Manufacturing Co., Ltd. - Inventors: Atsushi Ogasawara; Kazuhiko Ito; Koji Ito - Web page: https://patentgrep.com/patent/US20130154064A1 ## CPC - H10D 62/10: Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies - C03C 3/066: containing zinc - C03C 3/087: containing calcium oxide, e.g. common sheet or container glass - C03C 8/02: Frit compositions, i.e. in a powdered or comminuted form - C03C 8/24: Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders - H10P 14/47: Electrolytic deposition, i.e. electroplating; Electroless plating - H10P 14/6938: {the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides} - H10W 10/031: {of isolation regions comprising PN junctions} - H10W 10/30: Isolation regions comprising PN junctions - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - C03C: CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A glass composition for protecting a semiconductor junction contains at least SiO2, Al2O3, MO, and nickel oxide, and substantially contains none of Pb, P, As, Sb, Li, Na and K (M in MO indicates one of alkali earth metals). ## Claims ### Claim 1 A glass composition for protecting a semiconductor junction, wherein the glass composition for protecting a semiconductor junction contains at least SiO2, Al2O3, MO, and “at least one metal oxide selected from a group consisting of nickel oxide, copper oxide and manganese oxide”, and substantially contains none of Pb, P, As, Sb, Li, Na and K. (Here, M in said MO indicates one of alkali earth metals.) ### Claim 2 (depends on 1) glass composition for protecting a semiconductor junction according to claim 1, wherein the glass composition for protecting a semiconductor junction contains nickel oxide as said “at least one metal oxide selected from a group consisting of nickel oxide, copper oxide and manganese oxide”. ### Claim 3 (depends on 2) The glass composition for protecting a semiconductor junction according to claim 2, wherein the content of SiO2 is set to a value which falls within a range of 53 mol % to 73 mol %, the content of Al2O3 is set to a value which falls within a range of 11 mol % to 21 mol %, the content of CaO is set to a value which falls within a range of 3 mol % to 9 mol %, the content of MgO is set to a value which falls within a range of 11 mol % to 21 mol %, and the content of nickel oxide is set to a value which falls within a range of 0.01 mol % to 3 mol %. ### Claim 4 (depends on 2) The glass composition for protecting a semiconductor junction according to claim 2, wherein the content of SiO2 is set to a value which falls within a range of 32 mol % to 48 mol %, the content of Al2O3 is set to a value which falls within a range of 9 mol % to 13 mol %, the content of CaO is set to a value which falls within a range of 15 mol % to 23 mol %, the content of ZnO is set to a value which falls within a range of 18 mol % to 28 mol %, the content of B2O3 is set to a value which falls within a range of 3 mol % to 10 mol %, and the content of nickel oxide is set to a value which falls within a range of 0.01 mol % to 3 mol %. ### Claim 5 A method of manufacturing a semiconductor device comprising: a first step of preparing a semiconductor element having a pn junction exposure portion where a pn junction is exposed; and a second step of forming a glass layer such that the glass layer covers the pn junction exposure portion in this order, wherein in the second step, the glass layer is formed using a glass composition for protecting a semiconductor junction which contains at least SiO2, Al2O3, MO, and “at least one metal oxide selected from a group consisting of nickel oxide, copper oxide and manganese oxide”, and substantially contains none of Pb, P, As, Sb, Li, Na and K. (Here, M in said MO indicates one of alkali earth metals.) ### Claim 6 (depends on 5) The method of manufacturing a semiconductor device according to claim 5, wherein the first step includes: a step of preparing a semiconductor substrate having a pn junction arranged parallel to a main surface of the semiconductor substrate; and a step of forming a trench having a depth goes beyond the pn junction as measured from one surface of the semiconductor substrate thus forming the pn junction exposure portion in the inside of the trench, and the second step includes a step of forming the glass layer such that the glass layer covers the pn junction exposure portion in the inside of the trench. ### Claim 7 (depends on 6) The method of manufacturing a semiconductor device according to claim 6, wherein the second step includes a step of forming the glass layer such that the glass layer directly covers the pn junction exposure portion in the inside of the trench. ### Claim 8 (depends on 6) The method of manufacturing a semiconductor device according to claim 6, wherein the second step includes a step of forming an insulation film on the pn junction exposure portion in the inside of the trench, and a step of forming the glass layer such that the glass layer covers the pn junction exposure portion with the insulation film interposed therebetween. ### Claim 9 (depends on 5) The method of manufacturing a semiconductor device according to claim 5, wherein the first step includes a step of forming the pn junction exposure portion on a surface of a semiconductor substrate, and the second step includes a step of forming the glass layer such that the glass layer covers the pn junction exposure portion on the surface of the semiconductor substrate. ### Claim 10 (depends on 9) The method of manufacturing a semiconductor device according to claim 9, wherein the second step includes a step of forming the glass layer such that the glass layer directly covers the pn junction exposure portion on the surface of the semiconductor substrate. ### Claim 11 (depends on 9) The method of manufacturing a semiconductor device according to claim 9, wherein the second step includes a step of forming an insulation film on the pn junction exposure portion on the surface of the semiconductor substrate, and a step of forming the glass layer such that the glass layer covers the pn junction exposure portion with the insulation film interposed therebetween. ### Claim 12 (depends on 5) The method of manufacturing a semiconductor device according to claim 5, wherein the glass composition for protecting a semiconductor junction contains nickel oxide as said “at least one metal oxide selected from a group consisting of nickel oxide, copper oxide and manganese oxide”. ### Claim 13 (depends on 12) The method of manufacturing a semiconductor device according to claim 12, wherein the glass composition for protecting a semiconductor junction is set such that the content of SiO2 is set to a value which falls within a range of 53 mol % to 73 mol %, the content of Al2O3 is set to a value which falls within a range of 11 mol % to 21 mol %, the content of CaO is set to a value which falls within a range of 3 mol % to 9 mol %, the content of MgO is set to a value which falls within a range of 11 mol % to 21 mol %, and the content of nickel oxide is set to a value which falls within a range of 0.01 mol % to 3 mol %. ### Claim 14 (depends on 12) The method of manufacturing the semiconductor device according to claim 12, wherein the glass composition for protecting a semiconductor junction is set such that the content of SiO2 is set to a value which falls within a range of 32 mol % to 48 mol %, the content of Al2O3 is set to a value which falls within a range of 9 mol % to 13 mol %, the content of CaO is set to a value which falls within a range of 15 mol % to 23 mol %, the content of ZnO is set to a value which falls within a range of 18 mol % to 28 mol %, the content of B2O3 is set to a value which falls within a range of 3 mol % to 10 mol %, and the content of nickel oxide is set to a value which falls within a range of 0.01 mol % to 3 mol %. ### Claim 15 A semiconductor device comprising: a semiconductor element having a pn junction exposure portion where a pn junction is exposed; and a glass layer which is formed such that the glass layer covers the pn junction exposure portion, wherein the glass layer is formed using a glass composition for protecting a semiconductor junction which contains at least SiO2, Al2O3, MO, and “at least one metal oxide selected from a group consisting of nickel oxide, copper oxide and manganese oxide”, and substantially contains none of Pb, P, As, Sb, Li, Na and K. (Here, M in said MO indicates one of alkali earth metals.) ### Claim 16 (depends on 15) The semiconductor device according to claim 15, wherein the glass composition for protecting a semiconductor junction contains nickel oxide as said “at least one metal oxide selected from a group consisting of nickel oxide, copper oxide and manganese oxide”. ### Claim 17 (depends on 16) The semiconductor device according to claim 16, wherein the glass composition for protecting a semiconductor junction is set such that the content of SiO2 is set to a value which falls within a range of 53 mol % to 73 mol %, the content of Al2O3 is set to a value which falls within a range of 11 mol % to 21 mol %, the content of CaO is set to a value which falls within a range of 3 mol % to 9 mol %, the content of MgO is set to a value which falls within a range of 11 mol % to 21 mol %, and the content of nickel oxide is set to a value which falls within a range of 0.01 mol % to 3 mol %. ### Claim 18 (depends on 16) The semiconductor device according to claim 16, wherein the glass composition for protecting a semiconductor junction is set such that the content of SiO2 is set to a value which falls within a range of 32 mol % to 48 mol %, the content of Al2O3 is set to a value which falls within a range of 9 mol % to 13 mol %, the content of CaO is set to a value which falls within a range of 15 mol % to 23 mol %, the content of ZnO is set to a value which falls within a range of 18 mol % to 28 mol %, the content of B2O3 is set to a value which falls within a range of 3 mol % to 10 mol %, and the content of nickel oxide is set to a value which falls within a range of 0.01 mol % to 3 mol %.