# US 2013/0154056 A1 · Semiconductor device

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- Number: US 2013/0154056 A1
- Document ID: US20130154056A1
- Status: Published application
- Kind: A1
- Application number: 13/716,966
- Filed: 2012-12-17
- Published: 2013-06-20
- Earliest claimed: 2011-12-16
- Assignees: Elpida Memory, Inc.
- Inventors: Kazuaki TONARI
- Web page: https://patentgrep.com/patent/US20130154056A1

## CPC

- H10D 1/68: Capacitors having no potential barriers
- H10B 12/033: {the capacitor extending over the transistor}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

In a semiconductor device including a capacitor which has an upper electrode, a polycrystalline silicon layer on the upper electrode, and a metallic member on the polycrystalline silicon layer, the polycrystalline silicon layer includes germanium so that an upper portion of the polycrystalline silicon layer is lower than a lower portion thereof in a concentration of germanium.

## Claims

### Claim 1

A semiconductor device comprising:
a lower electrode formed over a semiconductor substrate;
a dielectric film formed on the lower electrode;
an upper electrode formed on the dielectric film;
a polycrystalline silicon layer formed on the upper electrode; and
a metallic member contacted with an upper surface of the polycrystalline silicon layer;
wherein a concentration of germanium in an upper portion of the polycrystalline silicon layer is lower than that in a lower portion of the polycrystalline silicon layer.

### Claim 2 (depends on 1)

The semiconductor device as claimed in claim 1, wherein the lower electrode has a cylindrical shape.

### Claim 3 (depends on 2)

The semiconductor device as claimed in claim 2, wherein the polycrystalline silicon layer is filled within a concave portion of the upper electrode which is located within a concave portion of the lower electrode.

### Claim 4 (depends on 1)

The semiconductor device as claimed in claim 1, wherein the polycrystalline silicon layer has a thickness which is 20 nm or more.

### Claim 5 (depends on 1)

The semiconductor device as claimed in claim 1, wherein the polycrystalline silicon layer includes boron.

### Claim 6 (depends on 1)

The semiconductor device as claimed in claim 1, wherein the upper electrode includes a metallic film.

### Claim 7 (depends on 1)

The semiconductor device as claimed in claim 1, wherein the metallic member is a metallic contact plug which is located over the lower electrode.

### Claim 8 (depends on 1)

The semiconductor device as claimed in claim 1, wherein the dielectric film includes a metal oxide film.

### Claim 9 (depends on 8)

The semiconductor device as claimed in claim 8, wherein the metal oxide film includes at least one oxide film selected from a group consisting of a titanium oxide film, a zirconium oxide film, a hafnium oxide film, and an aluminum oxide film.

### Claim 10 (depends on 1)

The semiconductor device as claimed in claim 1, wherein the metallic member includes tungsten.

### Claim 11 (depends on 2)

The semiconductor device as claimed in claim 2,
wherein a width of a plane cross section of an upper end portion of the lower electrode is larger than a width of a plane cross section of a bottom end portion thereof.

### Claim 12 (depends on 2)

The semiconductor device as claimed in claim 2, wherein a width of a plane cross section of the lower electrode simply increased from a bottom end portion of the lower electrode towards a top end portion of the lower electrode.

### Claim 13 (depends on 12)

The semiconductor device as claimed in claim 12, wherein the metallic member is a metallic contact plug which is located over the lower electrode.

### Claim 14

A semiconductor device comprising:
a cylindrical lower electrode formed over a semiconductor substrate;
a dielectric film formed on the cylindrical lower electrode;
an upper electrode formed on the dielectric electrode;
a polycrystalline silicon layer which is laminated on the upper electrode; and
a metallic contact plug which is located over the cylindrical lower electrode and which electrically connects the upper electrode to a metal wiring layer,
wherein a concentration of germanium in an upper portion of the polycrystalline silicon layer is lower than that in a lower portion of the polycrystalline silicon layer,

### Claim 15 (depends on 14)

The semiconductor device as claimed in claim 14, wherein the upper electrode includes a metal film.

### Claim 16 (depends on 14)

The semiconductor device as claimed in claim 14, wherein the dielectric film includes a metal oxide film.

### Claim 17 (depends on 16)

The semiconductor device as claimed in claim 16, wherein the metal oxide film includes at least one oxide film selected from a group consisting of a titanium oxide film, a zirconium oxide film, a hafnium oxide film, and an aluminum oxide film.

### Claim 18 (depends on 14)

The semiconductor device as claimed in claim 14, wherein the metallic contact plug includes tungsten.

### Claim 19 (depends on 14)

The semiconductor device as claimed in claim 14,
wherein a width of a plane cross section of an upper end portion of the lower electrode is larger than a width of a plane cross section of a bottom end portion thereof.

### Claim 20 (depends on 14)

The semiconductor device as claimed in claim 14, wherein a width of a plane cross section of the lower electrode simply increased from a bottom end portion of the lower electrode towards a top end portion of the lower electrode.