# US 2013/0154042 A1 · Photonic Systems and Methods of Forming Photonic Systems

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- Number: US 2013/0154042 A1
- Document ID: US20130154042A1
- Status: Published application
- Kind: A1
- Application number: 13/766,970
- Filed: 2013-02-14
- Published: 2013-06-20
- Earliest claimed: 2011-06-30
- Assignees: Micron Technology, Inc.
- Inventors: Roy E. Meade
- Web page: https://patentgrep.com/patent/US20130154042A1

## CPC

- H10F 77/407: {indirectly associated with the devices}
- G02B 6/12004: {Combinations of two or more optical elements}
- H10F 30/223: the potential barrier being a PIN barrier
- H10F 71/1212: {consisting of germanium}
- H10F 77/413: {directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42)}
- G02B 6/1223: {high refractive index type, i.e. high-contrast waveguides}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS

## Abstract

Some embodiments include photonic systems. The systems may include a silicon-containing waveguide configured to direct light along a path, and a detector proximate the silicon-containing waveguide. The detector may comprise a detector material which has a lower region and an upper region, with the lower region having a higher concentration of defects than the upper region. The detector material may comprise germanium in some embodiments. Some embodiments include methods of forming photonic systems.

## Claims

### Claim at position 1

1-26. (canceled)

### Claim 27

A photonic system, comprising:
a silicon-containing waveguide over a base;
an opening extending into the base;
a liner narrowing the opening;
germanium-containing detector material over the base and extending into the narrowed opening; the detector material being part of a detector configured to detect light within the waveguide; a lower region of the germanium-containing detector material within the narrowed opening having a higher concentration of defects than an upper region of the germanium-containing detector material above the narrowed opening; and
wherein the upper region extends laterally outwardly beyond the liner so that some of the upper region is directly over the liner.

### Claim 28 (depends on 27)

The photonic system of claim 27 wherein the liner comprises electrically insulative material.

### Claim 29 (depends on 27)

The photonic system of claim 27 wherein the liner comprises electrically conductive material.

### Claim 30

A photonic system, comprising:
a silicon-containing waveguide over a monocrystalline silicon base;
an opening extending into the base;
a liner narrowing the opening;
a germanium-containing detector material over the base and extending into the narrowed opening; the detector material being part of a detector configured to detect light within the waveguide; a region of the germanium-containing detector material within the narrowed opening having a higher concentration of defects than a region of the germanium-containing detector material outside of the narrowed opening;
wherein the silicon-containing waveguide is comprised by a line spaced from the monocrystalline silicon base by one or more materials;
wherein the liner comprises a liner material; and
wherein the liner material is along sidewalls of the silicon-containing waveguide line.

### Claim 31 (depends on 30)

The photonic system of claim 30 wherein the germanium-containing detector material is taller than the silicon-containing waveguide.

### Claim 32 (depends on 30)

The photonic system of claim 30 wherein the germanium-containing detector material is not taller than the silicon-containing waveguide.

### Claim 33

A method of forming a photonic system, comprising:
forming an opening into a monocrystalline material;
lining sidewalls of the opening with liner material, while leaving monocrystalline material exposed along a bottom of the lined opening;
epitaxially growing a detector material from the exposed monocrystalline material along the bottom of the lined opening; the detector material having a lower region within the lined opening and having an upper region over the lower region; the lower region having a higher concentration of defects than the upper region; the upper region extending laterally outward of the lower region and being across the liner material; and
forming a silicon-containing waveguide over the base and within range of a detector comprising the detector material such that the detector can be utilized to ascertain presence of light within the waveguide.

### Claim 34 (depends on 33)

The method of claim 33 wherein the opening has a depth of less than or equal to about 400 nm and a maximum width of less than or equal to about 400 nm.

### Claim 35 (depends on 33)

The method of claim 33 wherein the detector material is epitaxially grown germanium, and wherein the epitaxial growth of the germanium comprises:
growing the lower region while maintaining a temperature of the epitaxially growing germanium at less than or equal to about 350° C.; and
growing the upper region while maintaining a temperature of the epitaxially growing germanium at greater than or equal to about 600° C.

### Claim 36 (depends on 35)

The method of claim 35 further comprising providing p-type dopant within a top region of the detector material and providing n-type dopant within a region of the base directly adjacent the detector material.

### Claim 37 (depends on 35)

The method of claim 35 wherein the silicon-containing waveguide is formed after the detector material.