# US 2013/0154037 A1 · Method of making device

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- Number: US 2013/0154037 A1
- Document ID: US20130154037A1
- Status: Published application
- Kind: A1
- Application number: 13/715,971
- Filed: 2012-12-14
- Published: 2013-06-20
- Earliest claimed: 2011-12-19
- Assignees: Lam Research Corporation
- Inventors: Joydeep GUHA
- Web page: https://patentgrep.com/patent/US20130154037A1

## CPC

- H10N 50/01: Manufacture or treatment
- G11C 11/161: {details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell}
- H10D 48/40: Devices controlled by magnetic fields
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A method for forming MRAM (magnetoresistive random access memory) devices is provided. A bottom electrode assembly is formed. A magnetic junction assembly is formed, comprising, depositing a magnetic junction assembly layer over the bottom electrode assembly, forming a patterned mask over the magnetic junction assembly layer, etching the magnetic junction assembly layer to form the magnetic junction assembly with gaps, gap filling the magnetic junction assembly, and planarizing the magnetic junction assembly. A top electrode assembly is formed.

## Claims

### Claim 1

A method for forming MRAM (magnetoresistive random access memory) devices, comprising:
forming a bottom electrode assembly;
forming a magnetic junction assembly; and
forming a top electrode assembly.

### Claim 2 (depends on 1)

The method, as recited in claim 1, wherein the forming the bottom electrode assembly, comprises:
depositing a bottom electrode assembly layer over a substrate;
forming a patterned mask over the bottom electrode assembly layer;
etching the bottom electrode assembly layer to form the bottom electrode assembly with gaps;
gap filling the gaps in the bottom electrode assembly; and
planarizing the bottom electrode assembly.

### Claim 3 (depends on 2)

The method, as recited in claim 2, wherein the forming the magnetic assembly, comprises:
depositing a magnetic junction assembly layer over the planarized bottom electrode assembly;
forming a patterned mask over the magnetic junction assembly layer;
etching the magnetic junction assembly layer to form the magnetic junction assembly with gaps;
gap filling the magnetic junction assembly; and
planarizing the magnetic junction assembly.

### Claim 4 (depends on 3)

The method, as recited in claim 3, wherein the forming the top electrode assembly, comprises:
depositing a top electrode assembly layer over the planarized magnetic junction assembly;
forming a patterned mask over the top electrode assembly layer;
etching the top electrode assembly layer to form the top electrode assembly with gaps; and
gap filling the top electrode assembly.

### Claim 5 (depends on 4)

The method, as recited in claim 4, further comprising:
stripping the patterned mask over the bottom electrode assembly; and
stripping the patterned mask over the magnetic junction assembly.

### Claim 6 (depends on 5)

The method, as recited in claim 5, wherein the etching the bottom electrode assembly layer is performed by a dry etch.

### Claim 7 (depends on 6)

The method, as recited in claim 6, wherein the etching the magnetic junction assembly layer is performed by a dry etch.

### Claim 8 (depends on 7)

The method, as recited in claim 7, wherein the etching the top electrode assembly layer is performed by a dry etch.

### Claim 9 (depends on 8)

The method, as recited in claim 8, wherein the depositing the magnetic junction assembly layer, comprises:
depositing a bottom magnetic layer over the planarized bottom electrode assembly;
depositing a tunnel oxide layer over the bottom magnetic layer; and
depositing a top magnetic layer over the tunnel oxide layer.

### Claim 10 (depends on 9)

The method, as recited in claim 9, wherein the gap filling fills the gaps with a dielectric material.

### Claim 11 (depends on 2)

The method, as recited in claim 2, wherein the etching the bottom electrode assembly layer is performed by a dry etch.

### Claim 12 (depends on 1)

The method, as recited in claim 1, wherein the forming the magnetic assembly, comprises:
depositing a magnetic junction assembly layer over the bottom electrode assembly;
forming a patterned mask over the magnetic junction assembly layer;
etching the magnetic junction assembly layer to form the magnetic junction assembly with gaps;
gap filling the magnetic junction assembly; and
planarizing the magnetic junction assembly.

### Claim 13 (depends on 12)

The method, as recited in claim 12, wherein the etching the magnetic junction assembly layer is performed by a dry etch.

### Claim 14 (depends on 12)

The method, as recited in claim 12, wherein the depositing the magnetic junction assembly layer, comprises:
depositing a bottom magnetic layer over the bottom electrode assembly;
depositing a tunnel oxide layer over the bottom magnetic layer; and
depositing a top magnetic layer over the tunnel oxide layer.

### Claim 15 (depends on 12)

The method, as recited in claim 12, wherein the gap filling fills the gaps with a dielectric material.

### Claim 16 (depends on 1)

The method, as recited in claim 1, wherein the forming the top electrode assembly, comprises:
depositing a top electrode assembly layer over the magnetic junction assembly;
forming a patterned mask over the top electrode assembly layer;
etching the top electrode assembly layer to form the top electrode assembly with gaps; and
gap filling the top electrode assembly.

### Claim 17 (depends on 15)

The method, as recited in claim 15, wherein the etching the top electrode assembly layer is performed by a dry etch.

### Claim 18

A method for forming MRAM (magnetoresistive random access memory) devices, comprising:
forming a bottom electrode assembly, comprising:
depositing a bottom electrode assembly layer over a substrate;
forming a patterned mask over the bottom electrode assembly layer;
etching the bottom electrode assembly layer to form the bottom electrode assembly with gaps;
gap filling the gaps in the bottom electrode assembly;
stripping the patterned mask over the bottom electrode assembly; and
planarizing the bottom electrode assembly;
forming a magnetic junction assembly, comprising
depositing a magnetic junction assembly layer over the planarized bottom electrode assembly;
forming a patterned mask over the magnetic junction assembly layer;
etching the magnetic junction assembly layer to form the magnetic junction assembly with gaps;
gap filling the magnetic junction assembly;
stripping the patterned mask over the magnetic junction assembly; and
planarizing the magnetic junction assembly; and
forming a top electrode assembly, comprising
depositing a top electrode assembly layer over the planarized magnetic junction assembly;
forming a patterned mask over the top electrode assembly layer;
etching the top electrode assembly layer to form the top electrode assembly with gaps; and
gap filling the top electrode assembly.

### Claim 19

A magnetoresistive random access memory device formed by the method, comprising:
forming a bottom electrode assembly;
forming a magnetic junction assembly; and
forming a top electrode assembly.