# US 2013/0154030 A1 · Semiconductor Device with Self-Charging Field Electrodes and Compensation Regions

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- Number: US 2013/0154030 A1
- Document ID: US20130154030A1
- Status: Published application
- Kind: A1
- Application number: 13/331,843
- Filed: 2011-12-20
- Published: 2013-06-20
- Earliest claimed: 2011-12-20
- Assignees: Infineon Technologies Austria AG
- Inventors: Hans Weber
- Web page: https://patentgrep.com/patent/US20130154030A1

## CPC

- H10D 84/146: {the built-in components being Schottky barrier diodes}
- H10D 8/00: Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00)
- H10D 8/60: Schottky-barrier diodes
- H10D 30/66: Vertical DMOS [VDMOS] FETs
- H10D 30/668: {having trench gate electrodes, e.g. UMOS transistors}
- H10D 62/111: {Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures}
- H10D 62/116: {adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions}
- H10D 64/117: {Recessed field plates, e.g. trench field plates or buried field plates}
- H10D 62/107: {Buried supplementary regions, e.g. buried guard rings (multi-RESURF H10D62/111)}
- H10D 62/393: {Body regions of DMOS transistors or IGBTs (cell layout of DMOS H10D62/127)}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A semiconductor device includes a drift region of a first doping type, a junction between the drift region and a device region, a compensation region of a second doping type, and at least one field electrode structure arranged between the drift region and the compensation region. The at least one field electrode includes a field electrode and a field electrode dielectric adjoining the field electrode. The field electrode dielectric is arranged between the field electrode and the drift region and between the field electrode and the compensation. The field electrode dielectric includes a first opening through which the field electrode is coupled to drift region and a second opening through which the field electrode is coupled to the compensation region.

## Claims

### Claim 1

A semiconductor device, comprising:
a drift region of a first doping type, a junction between the drift region and a device region, a compensation region of a second doping type, and at least one field electrode structure arranged between the drift region and the compensation region and comprising:
a field electrode; and
a field electrode dielectric adjoining the field electrode, the field electrode dielectric arranged between the field electrode and the drift region and between the field electrode and the compensation and comprising a first opening through which the field electrode is coupled to drift region and a second opening through which the field electrode is coupled to the compensation region.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, wherein the field electrode comprises an electrically conductive material.

### Claim 3 (depends on 1)

The semiconductor device of claim 1, wherein the field electrode comprises one of a metal, a silicide, or a polysilicon.

### Claim 4 (depends on 1)

The semiconductor device of claim 1, wherein the field electrode dielectric further comprises:
a first field stop region of the same doping type as the drift region and more highly doped than the drift region, the first field stop region connecting the field electrode to the drift region through the first opening of the field electrode dielectric; and
a second field stop region of the same doping type as the compensation region and more highly doped than the compensation region, the second field stop region connecting the field electrode to the compensation region through the second opening of the field electrode dielectric.

### Claim 5 (depends on 1)

The semiconductor device of claim 1, wherein the first opening is located closer to the device region in a current flow direction of the semiconductor device than the second opening.

### Claim 6 (depends on 1)

The semiconductor device of claim 1, further comprising:
a plurality of field electrode structures arranged next to each other in a current flow direction of the semiconductor device and adjoining one another, so that the plurality of field electrode structures separates the compensation region from the drift region in a direction perpendicular to the current flow direction.

### Claim 7

A semiconductor device, comprising a drift region of a first doping type, a junction between the drift region and a device region, and at least one field electrode structure in the drift region, the field electrode structure comprising:
a field electrode;
a field electrode dielectric adjoining the field electrode and arranged between the field electrode and the drift region, and having an opening;
at least one of a field stop region and a generation region, the field stop region of the first doping type and more highly doped than the drift region, the field stop region connecting the field electrode to the drift region through the opening of the field electrode dielectric, the generation region connecting the field electrode to the drift region through the opening of the field electrode dielectric or arranged in the field electrode; and
a compensation region of a second doping type adjoining the drift region and connected to device region.

### Claim 8 (depends on 7)

The semiconductor device of claim 7, wherein the field electrode includes a semiconductor material of the first doping type but more highly doped than the drift region.

### Claim 9 (depends on 7)

The semiconductor device of claim 7, wherein the field electrode includes one of a metal, and a polycrystalline semiconductor material.

### Claim 10 (depends on 7)

The semiconductor device of claim 7, wherein a section of the field electrode adjoins the drift region.

### Claim 11 (depends on 10)

The semiconductor device of claim 10, wherein the field electrode includes at least one of a metal and a polycrystalline semiconductor material.

### Claim 12 (depends on 7)

The semiconductor device of claim 7,
wherein the semiconductor device has a current flow direction, and
wherein the field stop region does not extend more than 200 nm beyond the field electrode dielectric into the drift region in a direction perpendicular to the current flow direction.

### Claim 13 (depends on 7)

The semiconductor device of claim 7,
wherein the semiconductor device has a current flow direction, and
wherein the field stop region does not extend beyond the field electrode dielectric in a direction perpendicular to the current flow direction.

### Claim 14 (depends on 7)

The semiconductor device of claim 7, wherein the opening of the field electrode dielectric is located in the direction of the pn junction.

### Claim 15 (depends on 7)

The semiconductor device of claim 7, wherein the at least one field electrode structure comprises a shielding region arranged distant to the opening of the field electrode dielectric in a current flow direction of the semiconductor device.

### Claim 16 (depends on 7)

The semiconductor device of claim 7, further comprising:
a plurality of field electrode structures arranged distant to each other in a current flow direction of the semiconductor device.

### Claim 17 (depends on 16)

The semiconductor device of claim 16, wherein the field stop regions of the individual field electrode structures of the plurality of field electrode structures are implemented such that at least some of the field stop regions adjoin the field electrode dielectric of a neighboring field electrode structure.

### Claim 18 (depends on 7)

The semiconductor device of claim 7,
wherein the semiconductor device is implemented as a MOS transistor in which the device region is a semiconductor region of a second doping type and forms a body region, and wherein the MOS transistor further comprises:
a source region, wherein the body region is arranged between the drift region and the source region;
a drain region, wherein the drift region is arranged between the drain region and the body region; and
a gate electrode arranged adjacent the body region and dielectrically insulated from the body region by a gate dielectric.

### Claim 19 (depends on 7)

The semiconductor device of claim 7, wherein the semiconductor device is implemented as a bipolar diode and the device region is a semiconductor region of a second doping type and forms an emitter region.

### Claim 20 (depends on 7)

The semiconductor device of claim 7, wherein the semiconductor device is implemented as a Schottky diode and the device region is a Schottky region.

### Claim 21 (depends on 7)

The semiconductor device of claim 7, wherein the generation region includes an interface region between the field electrode and the drift region.

### Claim 22 (depends on 21)

The semiconductor device of claim 21, wherein the field electrode includes a metal or a silicide.

### Claim 23 (depends on 7)

The semiconductor device of claim 7, wherein the field electrode comprises one of a polycrystalline or amorphous semiconductor material, or a monocrystalline semiconductor region with foreign material atoms included therein or with crystal defects.

### Claim 24 (depends on 7)

The semiconductor device of claim 7, wherein the generation region comprises a void.