# US 2013/0154025 A1 · Semiconductor device including capacitor stabilizing variation of power supply voltage > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2013/0154025 A1 - Document ID: US20130154025A1 - Status: Published application - Kind: A1 - Application number: 13/712,476 - Filed: 2012-12-12 - Published: 2013-06-20 - Earliest claimed: 2011-12-19 - Assignees: Elpida Memory, Inc. - Inventors: Koji YASUMORI; Hisayuki NAGAMINE - Web page: https://patentgrep.com/patent/US20130154025A1 ## CPC - H10D 30/60: Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence) - H10D 1/62: Capacitors having potential barriers - H10D 89/811: {using FETs as protective elements} - H10D 8/411: {PN diodes having planar bodies} - H10D 62/17: Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions - H10D 62/371: {Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract Disclosed herein is a semiconductor device that includes a first line supplied with a first voltage, a second line supplied with a second voltage, a first node, at least one first capacitor connected between the first line and the first node, at least one second capacitor connected between the node and the second line, and a protective element connected between the first node and the second line in parallel to the second capacitor. ## Claims ### Claim 1 A semiconductor device comprising: a first line supplied with a first voltage; a second line supplied with a second voltage; a first node; at least one first capacitor connected between the first line and the first node; at least one second capacitor connected between the node and the second line; and a protective element connected between the first node and the second line in parallel to the second capacitor. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein, the protective element has cathode and anode connected respectively to the first node and the second line. ### Claim 3 (depends on 2) The semiconductor device according to claim 2, wherein the protective element is formed in a semiconductor substrate of a first conductivity type, the cathode being a first diffusion layer of the second conductivity type which is formed in the semiconductor substrate, and the anode being a second diffusion layer of the first conductivity type which is formed in the semiconductor substrate. ### Claim 4 (depends on 3) The semiconductor device according to claim 3, wherein the protective element further includes comprising another diffusion layer of the first conductivity type formed in the semiconductor substrate; and wherein, the first and second diffusion layers are disposed to each other at a first distance that is less than a distance between the first diffusion layer and the other diffusion layer. ### Claim 5 (depends on 3) The semiconductor device according to claim 3, further comprising: a third diffusion layer of the first conductivity type which is formed in the semiconductor substrate; the first and second diffusion layers being formed in the third diffusion layer; the anode being the second and third diffusion layers. ### Claim 6 (depends on 5) The semiconductor device according to claim 5, further comprising: a fourth diffusion layer of the second conductivity type which is formed in the semiconductor substrate; wherein, the fourth diffusion layer is between the semiconductor substrate and the third diffusion layer. ### Claim 7 (depends on 5) The semiconductor device according to claim 5, further comprising: a fifth diffusion layer of the second conductivity type which is formed in the semiconductor substrate; wherein, the fifth diffusion layer is formed encircling at least the first to third diffusion layers. ### Claim 8 (depends on 7) The semiconductor device according to claim 7, further comprising: a fourth diffusion layer of the second conductivity type which is formed in the semiconductor substrate; wherein, the fourth diffusion layer is formed sandwiched between the semiconductor substrate and the third diffusion layer, the second diffusion layer when seen in a plan view of the semiconductor substrate being formed encircling the first diffusion layer. ### Claim 9 (depends on 8) The semiconductor device according to claim 8, wherein, the fifth diffusion layer is formed encircling the fourth diffusion layer. ### Claim 10 (depends on 1) The semiconductor device according to claim 1, wherein, the protective element is a field effect transistor having a gate, a source, a drain and a back-bias; the mid connection point being connected to the drain; the second line being connected to the gate, the source and the back-bias. ### Claim 11 (depends on 10) The semiconductor device according to claim 10, further comprising: a semiconductor substrate of the first conductivity type; a first diffusion layer of the first conductivity type which is formed on the semiconductor substrate; second and third diffusion layers of the second conductivity type which are formed in the first diffusion layer; a fourth diffusion layer of the first conductivity type which is formed in the first diffusion layer; and the gate layer being formed via a gate insulation layer on a surface of the semiconductor substrate; the drain being the second diffusion layer; the source being the third diffusion layer; the back-bias being the first diffusion layer; the first diffusion layer being connected to the second line via the fourth diffusion layer. ### Claim 12 (depends on 11) The semiconductor device according to claim 11, further comprising: a fifth diffusion layer of the second conductivity type which is formed in the semiconductor substrate; wherein, the fifth diffusion layer is formed sandwiched between the semiconductor substrate and the first diffusion layer. ### Claim 13 (depends on 11) The semiconductor device according to claim 11, further comprising: a sixth diffusion layer of the second conductivity type which is formed in the semiconductor substrate; wherein, the sixth diffusion layer is formed encircling at least the first to fourth diffusion layers. ### Claim 14 (depends on 13) The semiconductor device according to claim 13, further comprising: a fifth diffusion layer of the second conductivity type which is formed in the semiconductor substrate; wherein, the fifth diffusion layer is formed sandwiched between the semiconductor substrate and the first diffusion layer; the fourth diffusion layer being formed encircling the second diffusion layer. ### Claim 15 (depends on 14) The semiconductor device according to claim 14, wherein, the sixth diffusion layer is formed encircling the fifth diffusion layer. ### Claim 16 A semiconductor device, comprising: a first external terminal supplied with a first voltage from outside; a second external terminal supplied with a second voltage lower than the first voltage; first and second power supply lines respectively connected to the first and second external terminals; a plurality of capacitance elements connected in series between the first and second power supply lines; and a semiconductor substrate of a first conductivity type; wherein, a mid connection point interconnecting different ones of the plurality of the capacitance elements to each other is connected to a first area of the second conductivity type which is formed in the semiconductor substrate; the second power supply line being connected to a second area of the first conductivity type which is formed in the semiconductor substrate. ### Claim 17 (depends on 1) The semiconductor device according to claim 1, wherein, the plurality of the capacitance elements are longitudinally oriented capacitance elements that are formed between multilevel interconnects and that are of such a structure in which pillar-shaped upper electrodes are housed in tubular shaped lower electrodes, respectively. ### Claim 18 A semiconductor device comprising: a first conductive line conveying a first voltage; a second conductive line conveying a second voltage; a connection node; a first capacitor connected between the first conductive line and the connection node; a second capacitor connected between the connection node and the second line; and a first element functioning as a diode and connected between the connection node and the second line such that the first element is reverse-biased by a voltage between the connection node and the second line. ### Claim 19 (depends on 18) The device according to claim 18, further comprising a third capacitor inserted between the second capacitor and the second line and a second element functioning as a diode and connected between a connection point of the second and third capacitors and the second line such that the second element is reverse-biased by a voltage between the connection point and the second line. ### Claim 20 (depends on 18) The device according to claim 18, wherein each of the first and second capacitors includes a cylindrical electrode, dielectric film covering the cylindrical electrode and an opposite electrode formed on the dielectric film.