# US 2013/0154018 A1 · Semiconductor device comprising self-aligned contact bars and metal lines with increased via landing regions > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2013/0154018 A1 - Document ID: US20130154018A1 - Status: Published application - Kind: A1 - Application number: 13/769,446 - Filed: 2013-02-18 - Published: 2013-06-20 - Earliest claimed: 2010-12-21 - Assignees: Globalfoundries Inc. - Inventors: Thomas Werner; Peter Baars; Frank Feustel - Web page: https://patentgrep.com/patent/US20130154018A1 ## CPC - H10W 70/611: {for connecting multiple chips together} - H10D 84/83: of only insulated-gate FETs [IGFET] - H10W 20/085: {involving intermediate temporary filling with material} - H10W 20/088: {involving partial etching of via holes} - H10W 20/089: {using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning} - H10W 20/42: Vias, e.g. via plugs - H10W 70/635: {Through-vias} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract Disclosed herein is an illustrative semiconductor device that includes a transistor having drain and source regions and a gate electrode structure. The disclosed semiconductor device also includes a contact bar formed in a first dielectric material that connects to one of the drain and source regions and includes a first conductive material, the contact bar extending along a width direction of the transistor. Moreover, the illustrative device further includes, among other things, a conductive line formed in a second dielectric material, the conductive line including an upper portion having a top width extending along a length direction of the transistor and a lower portion having a bottom width extending along the length direction that is less than the top width of the upper portion, wherein the conductive line connects to the contact bar and includes a second conductive material that differs from the first conductive material. ## Claims ### Claim at position 1 -20. (canceled) ### Claim 21 A semiconductor device, comprising: a transistor comprising drain and source regions and a gate electrode structure; a contact bar formed in a first dielectric material and connecting to one of said drain region and said source region, said contact bar comprising a first conductive material, a length of said contact bar extending along a width direction of said transistor; and a conductive line formed in a second dielectric material, said conductive line comprising an upper portion having a top width extending along a length direction of said transistor and a lower portion having a bottom width extending along said length direction that is less than said top width of said upper portion, said conductive line connecting to said contact bar and comprising a second conductive material that differs from said first conductive material. ### Claim 22 (depends on 21) The semiconductor device of claim 21, wherein said first conductive material comprises a first type of metal and said second conductive material comprises a second type of metal that differs from said first type. ### Claim 23 (depends on 21) The semiconductor device of claim 21, wherein said bottom width of said conductive line is approximately 20 nm or less. ### Claim 24 (depends on 23) The semiconductor device of claim 23, wherein said lower portion and said upper portion have a substantially step-like configuration. ### Claim 25 (depends on 21) The semiconductor device of claim 21, wherein said upper portion has a bottom width extending along said length direction of said transistor and said lower portion has a top width extending along said length direction that is less than said bottom width of said upper portion. ### Claim 26 (depends on 21) The semiconductor device of claim 21, further comprising a via that connects to said conductive line, wherein said via has a bottom width extending along said length direction of said transistor that is less than said top width of said conductive line. ### Claim 27 (depends on 21) The semiconductor device of claim 21, wherein a height of said contact bar is substantially less than or equal to a height of said gate electrode structure. ### Claim 28 (depends on 21) The semiconductor device of claim 21, wherein said contact bar contacts a sidewall spacer structure of said gate electrode structure of said transistor and a sidewall spacer structure of a gate electrode structure of a second transistor positioned adjacent to said transistor. ### Claim 29 (depends on 21) The semiconductor device of claim 21, wherein said upper portion has a first length extending along said width direction of said transistor and said lower portion has a second length extending along said width direction that is greater than said first length. ### Claim 30 A semiconductor device, comprising: a transistor comprising drain and source regions and a gate electrode structure; a contact bar comprising a first conductive material formed in a first dielectric material and connecting to one of said drain region and said source region, a length of said contact bar extending along a width direction of said transistor; a conductive line formed in a second dielectric material and connecting to said contact bar, said conductive line having a top width extending along a length direction of said transistor and comprising a second conductive material that differs from said first conductive material; a landing area embedded in said conductive line and said second dielectric material, said landing area comprising said second conductive material and having a top width extending along said length direction that is greater than said top width of said conductive line; and a via formed in a metallization layer and connecting to said landing area. ### Claim 31 (depends on 30) The semiconductor device of claim 30, wherein said conductive line has a length extending along said width direction of said transistor and said landing area has a locally restricted length extending along said width direction that is less than said length of said conductive line. ### Claim 32 (depends on 30) The semiconductor device of claim 30, wherein said conductive line has a bottom width extending along said length direction of said transistor and said contact bar that has a top width extending along said length direction that is greater than said bottom width of said conductive line. ### Claim 33 (depends on 32) The semiconductor device of claim 32, wherein said bottom width of said conductive line is approximately 20 nm or less. ### Claim 34 (depends on 30) The semiconductor device of claim 30, wherein said via has a bottom width extending along said length direction of said transistor that is less than said top width of said landing area. ### Claim 35 (depends on 30) The semiconductor device of claim 30, wherein said upper surface of said embedded landing area is substantially co-planar with an upper surface of said conductive line. ### Claim 36 A semiconductor device, comprising: a transistor comprising drain and source regions; a contact bar comprising a first conductive material formed in a first dielectric material and connecting to one of said drain region and said source region, said contact bar having a length extending along a width direction of said transistor and a top width extending along a length direction of said transistor; a conductive line formed in a second dielectric material and connecting to said contact bar, said conductive line comprising a first portion having a top width extending along said length direction and a second portion having a bottom width extending along said length direction that is less than said top width of said contact bar and less than said top width of said first portion, said conductive line comprising a second conductive material that differs from said first conductive material; and a via formed in a metallization layer and connecting to said first portion, said via having a bottom width extending along said length direction that is less than said top width of said first portion. ### Claim 37 (depends on 36) The semiconductor device of claim 36, wherein said first portion is embedded in said second dielectric material and said second portion, said second portion having a length extending along said width direction of said transistor and said first portion having a length extending along said width direction that is less than said length of said second portion. ### Claim 38 (depends on 37) The semiconductor device of claim 37, wherein said second portion has a top width extending along said length direction of said transistor that is less than said top width of said second portion. ### Claim 39 (depends on 36) The semiconductor device of claim 36, further comprising a second transistor positioned adjacent to said transistor, said transistor comprising a first gate electrode structure having a first sidewall spacer structure and said second transistor comprising a second gate electrode structure a second sidewall spacer structure, wherein said contact bar contacts said first and second sidewall spacer structures. ### Claim 40 (depends on 36) The semiconductor device of claim 36, wherein said first and second portions of said conductive line have a substantially step-like configuration, said first portion having a bottom width along said length direction of said transistor and said second portion having a top width along said length direction that is less than said bottom width of said first portion.