# US 2013/0153975 A1 · Device Having a Plurality of Photosensitive Microcells Arranged in Row or Matrix Form

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- Number: US 2013/0153975 A1
- Document ID: US20130153975A1
- Status: Published application
- Kind: A1
- Application number: 13/819,765
- Filed: 2011-08-12
- Published: 2013-06-20
- Earliest claimed: 2010-09-01
- Assignees: Siemens Aktiengesellschaft
- Inventors: Debora Henseler; Meinrad Schienle
- Web page: https://patentgrep.com/patent/US20130153975A1

## CPC

- H10F 39/103: {the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors}
- G01T 1/248: {Silicon photomultipliers [SiPM], e.g. an avalanche photodiode [APD] array on a common Si substrate}
- H10F 39/802: {Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes}
- H10F 39/803: {Pixels having integrated switching, control, storage or amplification elements}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- G01T: MEASUREMENT OF NUCLEAR OR X-RADIATION (radiation analysis of materials, mass spectrometry G01N23/00; tubes for determining the presence, intensity, density or energy of radiation or particles H01J47/00)

## Abstract

The invention provides a Silicon Photomultiplier (SiPM). The SiPM includes a plurality of microcells, a nonlinear element integrated in each one of the plurality of microcells, and a trigger line for outputting a summated current of the plurality of microcells, wherein the nonlinear element provides for a separated timing and energy signal.

## Claims

### Claim at position 1

1-5. (canceled)

### Claim 6

A Silicon Photomultiplier (SIPM), comprising:
a plurality of microcells;
a nonlinear element integrated in each one of the plurality of microcells; and
a trigger line for outputting a summated current of the plurality of microcells, wherein the nonlinear element provides for a separated timing and energy signal.

### Claim 7 (depends on 6)

The SiPM of claim 6, wherein the nonlinear element comprises a N-type metal oxide semiconductor (NMOS) transistor.

### Claim 8 (depends on 6)

The SiPM of claim 6, wherein the nonlinear element comprises a P-type metal oxide semiconductor (PMOS) transistor.

### Claim 9 (depends on 6)

The SiPM of claim 6, wherein the nonlinear element activates an output on the trigger line.

### Claim 10 (depends on 6)

The SiPM of claim 6, wherein the timing signal and energy signal are not derived from a same summated signal.

### Claim 11 (depends on 6)

The SiPM of claim 6, further comprising:
a plurality of photodiodes wherein each one of the plurality of the photodiodes is coupled to a respective one of the plurality of microcells.

### Claim 12 (depends on 11)

The SiPM of claim 11, wherein the photodiode is an avalanche photodiode.

### Claim 13 (depends on 11)

The SiPM of claim 11, wherein at least one of the plurality of photodiodes is reverse biased and in Geiger mode.

### Claim 14 (depends on 11)

The SiPM of claim 11, wherein anodes of each of the plurality of photodiodes are connected to form an output line for capturing charges that are displaced in any of the plurality of microcells.

### Claim 15 (depends on 11)

The SiPM of claim 11, further comprising:
a resistor connected in parallel with the photodiode and the nonlinear element.

### Claim 16 (depends on 6)

The SiPM of claim 6, wherein the nonlinear element comprises a complementary metal oxide semiconductor (CMOS) transistor.

### Claim 17

A device for detecting radiation, comprising:
a plurality of photosensitive microcells arranged in a row or matrix for detecting one or more photons;
a plurality of avalanche photodiodes each one of the plurality of photodiodes being associated with a respective photosensitive microcell;
a plurality of quenching resistors wherein each quenching resistor is connected in series with a respective one of the plurality of avalanche photodiodes;
a plurality of amplifier elements wherein each amplifier element is located between a respective avalanche photodiode and quenching resistor in each one of the plurality of microcells;
a first trigger line for detecting at least one time point of an incidence of one or more photons within at least one of the plurality of photosensitive microcells; and
a second trigger line for detecting charges that are generated within at least one of the plurality of photosensitive microcells by an incidence of one or more photons.

### Claim 18 (depends on 17)

The device as in claim 17, wherein detection of the charges and time points are performed independently of each other.

### Claim 19 (depends on 18)

The device as in claim 18, wherein anodes of each of the plurality of avalanche diodes are connected together to provide the second trigger line.

### Claim 20 (depends on 17)

The device of claim 17, wherein the first trigger line comprises combined outputs of the plurality of avalanche diodes, outputs from the amplifier elements and outputs from the plurality of photosensitive microcells to form an OR signal line.

### Claim 21 (depends on 17)

The device of claim 17, wherein the first trigger line is subdivided into a plurality to segments that are combined via amplifier stages into a single summated trigger signal.

### Claim 22 (depends on 17)

The device of claim 17, wherein the plurality of amplifier elements are fabricated using CMOS.

### Claim 23 (depends on 17)

The device of claim 17, wherein the plurality of amplifier elements are fabricated using NMOS.

### Claim 24 (depends on 17)

The device of claim 17, wherein the plurality of amplifier elements are fabricated using PMOS.

### Claim 25 (depends on 17)

The device of claim 17, wherein the plurality of amplifier elements are fabricated using bipolar technology.