# US 2013/0153969 A1 · Structure for mosfet sensor

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2013/0153969 A1
- Document ID: US20130153969A1
- Status: Published application
- Kind: A1
- Application number: 13/419,156
- Filed: 2012-03-13
- Published: 2013-06-20
- Earliest claimed: 2011-12-16
- Assignees: National Chip Implementation Center National Applied Research Laboratories
- Inventors: Ying-Zong JUANG; Hann-Huei Tsai; Hsin-Hao Liao; Chen-Fu Lin
- Web page: https://patentgrep.com/patent/US20130153969A1

## CPC

- G01N 27/4145: {specially adapted for biomolecules, e.g. gate electrode with immobilised receptors}
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)

## Abstract

A structure for a metal-oxide-semiconductor field-effect transistor (MOSFET) sensor is provided. The structure includes a MOSFET, a sensing membrane, and a reference electrode. The reference electrode and the sensing membrane are formed on the first surface of the MOSFET and are arranged in such a way that the reference electrode and the sensing membrane are uniformly and electrically coupled to each other. Thus, the electric field between the sensing membrane and the reference electrode is uniformly distributed therebetween to stabilize the working signal of the MOSFET sensor.

## Claims

### Claim 1

A structure for a metal-oxide-semiconductor field-effect transistor (MOSFET) sensor, the structure comprising:
a MOSFET having a first surface;
a sensing membrane formed on the first surface; and
a reference electrode formed on the first surface, wherein the reference electrode and the sensing membrane are so arranged that the reference electrode and the sensing membrane are uniformly and electrically coupled to each other.

### Claim 2 (depends on 1)

The structure of claim 1, wherein the sensing membrane is an ion-sensing membrane.

### Claim 3 (depends on 2)

The structure of claim 2, wherein the ion-sensing membrane is formed of a material capable of forming a hydrogen bond with a hydrogen ion, the material being selected from the group consisting of tantalum pentoxide (Ta2O5), lead titanate (PbTiO3), aluminum oxide (Al2O3), silicon nitride (Si3N4), and silicon dioxide (SiO2).

### Claim 4 (depends on 1)

The structure of claim 1, wherein the sensing membrane is a biomedical sensing membrane.

### Claim 5 (depends on 4)

The structure of claim 4, wherein the biomedical sensing membrane has a surface formed of an enzyme, a DNA, or a protein receptor.

### Claim 6 (depends on 1)

The structure of claim 1, wherein the MOSFET has at least a gate metal layer electrically connected between the sensing membrane and a gate of the MOSFET.

### Claim 7 (depends on 1)

The structure of claim 1, wherein the reference electrode is made of platinum, gold, or silver/silver chloride.

### Claim 8 (depends on 1)

The structure of claim 1, wherein the sensing membrane is shaped as a disc, and the reference electrode is shaped as a ring and surrounds the sensing membrane at a uniform spacing therefrom.

### Claim 9 (depends on 1)

The structure of claim 1, wherein the reference electrode is shaped as a disc, and the sensing membrane is shaped as a ring and surrounds the reference electrode at a uniform spacing therefrom.

### Claim 10 (depends on 1)

The structure of claim 1, wherein the sensing membrane is shaped as a polygon, and the reference electrode is shaped as a polygonal ring corresponding to the sensing membrane and surrounds the sensing membrane.

### Claim 11 (depends on 10)

The structure of claim 10, wherein the polygon is a rectangle, and the polygonal ring is a rectangular frame.

### Claim 12 (depends on 10)

The structure of claim 10, wherein the polygonal ring further has at least a gap.

### Claim 13 (depends on 12)

The structure of claim 12, wherein the polygon is a rectangle, the polygonal ring is a rectangular frame, and each said gap is located at a right-angle corner of the rectangular frame.

### Claim 14 (depends on 1)

The structure of claim 1, wherein the reference electrode is shaped as a polygon, and the sensing membrane is shaped as a polygonal ring corresponding to the reference electrode and surrounds the reference electrode.

### Claim 15 (depends on 14)

The structure of claim 14, wherein the polygon is a rectangle, and the polygonal ring is a rectangular frame.

### Claim 16 (depends on 14)

The structure of claim 14, wherein the polygonal ring further has at least a gap.

### Claim 17 (depends on 16)

The structure of claim 16, wherein the polygon is a rectangle, the polygonal ring is a rectangular frame, and each said gap is located at a right-angle corner of the rectangular frame.

### Claim 18 (depends on 1)

The structure of claim 1, wherein the sensing membrane and the reference electrode are arranged in an interdigitating manner.

### Claim 19 (depends on 1)

The structure of claim 1, wherein the reference electrode surrounds a portion of the sensing membrane, the portion being greater than 50% of the sensing membrane.

### Claim 20 (depends on 1)

The structure of claim 1, wherein the sensing membrane surrounds a portion of the reference electrode, the portion being greater than 50% of the reference electrode.