# US 2013/0153950 A1 · Group iii nitride semiconductor light-emitting device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2013/0153950 A1 - Document ID: US20130153950A1 - Status: Published application - Kind: A1 - Application number: 13/706,262 - Filed: 2012-12-05 - Published: 2013-06-20 - Earliest claimed: 2011-12-16 - Assignees: Toyoda Gosei Co., Ltd. - Inventors: Koichi MIZUTANI; Ryohei INAZAWA; Yuhei IKEMOTO; Tomoyuki TAINAKA - Web page: https://patentgrep.com/patent/US20130153950A1 ## CPC - H10H 20/832: characterised by their material - H10H 20/831: characterised by their shape - H10H 20/018: {Bonding of wafers} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract The light-emitting device has a semiconductor layer including a p-layer, a light-emitting layer, and an n-layer, which are formed of a Group III nitride semiconductor, and an n-electrode on the n-layer. The device also has a device isolation trench which runs along the outer periphery of the semiconductor layer and which provides the semiconductor layer with a mesa shape; and an insulation film continuously provided on first to third regions, the first region being an outer peripheral region of the n-layer, the second region being the side surface of the trench, and the third region being the bottom surface of the device isolation trench. The n-electrode consists of two pad portions and a wire trace portion. The outer peripheral wire trace portion is formed as a frame completely contouring the periphery of the device. ## Claims ### Claim 1 A Group III nitride semiconductor light-emitting device, comprising a conductive support, a p-electrode disposed on the support, a semiconductor layer disposed on the p-electrode, the semiconductor layer being composed of at least a p-layer, a light-emitting layer, and an n-layer disposed in this order from the p-electrode, each of the three layers formed of a Group III nitride semiconductor, and an n-electrode disposed on the n-layer, wherein the device has a device isolation trench which is formed along the outer periphery of the semiconductor layer and which provides the semiconductor layer with a mesa shape; and an insulation film continuously provided on first to third regions, the first region being an outer peripheral region of the n-layer, the second region being the side surface of the trench, and the third region being the bottom surface of the device isolation trench; and the n-electrode has a pad portion to which a bonding wire is to be connected; a contact portion which is disposed at a distance from the pad portion and which is partially or fully disposed on the n-layer; and an outer peripheral wire trace portion which extends so as to contour the periphery, to thereby connect the pad portion with the contact portion and which is fully disposed on the insulation film, or which is partially disposed on the insulation film, the remaining part thereof being disposed on the n-layer. ### Claim 2 (depends on 1) A Group III nitride semiconductor light-emitting device according to claim 1, wherein the entirety of the outer peripheral wire trace portion is disposed on the insulation film. ### Claim 3 (depends on 2) A Group III nitride semiconductor light-emitting device according to claim 2, wherein the outer peripheral wire trace portion is disposed on only the third region of the insulation film. ### Claim 4 (depends on 1) A Group III nitride semiconductor light-emitting device according to claim 1, wherein a part of the pad portion is disposed on the insulation film, and the remaining part of the pad portion is disposed on the n-layer. ### Claim 5 (depends on 2) A Group III nitride semiconductor light-emitting device according to claim 2, wherein a part of the pad portion is disposed on the insulation film, and the remaining part of the pad portion is disposed on the n-layer. ### Claim 6 (depends on 3) A Group III nitride semiconductor light-emitting device according to claim 3, wherein a part of the pad portion is disposed on the insulation film, and the remaining part of the pad portion is disposed on the n-layer. ### Claim 7 (depends on 1) A Group III nitride semiconductor light-emitting device according to claim 1, wherein the entirety of the pad portion is disposed on the insulation film. ### Claim 8 (depends on 2) A Group III nitride semiconductor light-emitting device according to claim 2, wherein the entirety of the pad portion is disposed on the insulation film. ### Claim 9 (depends on 3) A Group III nitride semiconductor light-emitting device according to claim 3, wherein the entirety of the pad portion is disposed on the insulation film. ### Claim 10 (depends on 7) A Group III nitride semiconductor light-emitting device according to claim 7, wherein the entirety of the pad portion is disposed on the third region of the insulation film. ### Claim 11 (depends on 8) A Group III nitride semiconductor light-emitting device according to claim 8, wherein the entirety of the pad portion is disposed on the third region of the insulation film. ### Claim 12 (depends on 9) A Group III nitride semiconductor light-emitting device according to claim 9, wherein the entirety of the pad portion is disposed on the third region of the insulation film. ### Claim 13 (depends on 1) A Group III nitride semiconductor light-emitting device according to claim 1, wherein a part of the contact portion is disposed on the insulation film, and the remaining part of the contact portion is disposed on the n-layer. ### Claim 14 (depends on 1) A Group III nitride semiconductor light-emitting device according to claim 1, which has a transparent electrode disposed on the n-layer. ### Claim 15 (depends on 1) A Group III nitride semiconductor light-emitting device according to claim 1, wherein the n-layer has an embossed surface on the side opposite the light-emitting layer. ### Claim 16 (depends on 1) A Group III nitride semiconductor light-emitting device according to claim 1, wherein the pad portion, the contact portion and the outer peripheral wire trace portion of the n-electrode are formed of a same material. ### Claim 17 (depends on 16) A Group III nitride semiconductor light-emitting device according to claim 16, wherein the pad portion, the contact portion and the outer peripheral wire trace portion of the n-electrode comprises at least one selected from a group consisting of Ti, W, Al, Cr, and an alloy thereof. ### Claim 18 (depends on 1) A Group III nitride semiconductor light-emitting device according to claim 1, wherein the pad portion and the contact portion serving as n-electrodes comprise a material which is in ohmic contact with the n-layer, and the outer peripheral wire trace portion serving as the n-electrode comprises a material exhibiting an adhesion to the insulation film higher than an adhesion of the material of the pad portion. ### Claim 19 (depends on 18) A Group III nitride semiconductor light-emitting device according to claim 18, wherein the pad portion and the contact portion comprise at least one selected from a group consisting of Ti, W, Al, Cr, and an alloy thereof, and the outer peripheral wire trace portion comprises a material which is different from the material of the pad portion and which comprises at least one selected from a group consisting of Ni, Ti, Cu, Al, and an alloy thereof. ### Claim 20 (depends on 1) A Group III nitride semiconductor light-emitting device according to claim 1, wherein the contact portion also serves as the pad portion.