# US 2013/0153949 A1 · Light emitting device and manufacturing method thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2013/0153949 A1 - Document ID: US20130153949A1 - Status: Published application - Kind: A1 - Application number: 13/402,882 - Filed: 2012-02-23 - Published: 2013-06-20 - Earliest claimed: 2011-12-15 - Assignees: Au Optronics Corporation - Inventors: Chao-Shun Yang; Chen-Ming Hu - Web page: https://patentgrep.com/patent/US20130153949A1 ## CPC - H10K 71/60: Forming conductive regions or layers, e.g. electrodes - H10H 20/83: Electrodes - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10K 50/818: Reflective anodes, e.g. ITO combined with thick metallic layers - H10K 2102/3026: {Top emission} - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract A manufacturing method of a light emitting device is provided. A first electrode is formed on a substrate. The first electrode includes a patterned conductive layer, and the patterned conductive layer includes an alloy containing a first metal and a second metal. An annealing process is performed on the first electrode, so as to form a passivation layer at least on a side surface of the first electrode. The passivation layer includes a compound of the second metal. A light emitting layer is formed on the first electrode. A second electrode is formed on the light emitting layer. ## Claims ### Claim 1 A light emitting device comprising: a substrate; a first electrode disposed on the substrate, the first electrode comprising an alloy containing a first metal and indium, an alloy containing the first metal and zinc, or an alloy containing the first metal and indium-zinc, wherein indium, zinc, or indium-zinc accounts for about 0.1 wt %˜about 2 wt % of the alloy; a second electrode disposed on the first electrode; and a light emitting layer disposed between the first electrode and the second electrode. ### Claim 2 (depends on 1) The light emitting device of claim 1, wherein indium, zinc, or indium-zinc accounts for about 0.2 wt %˜about 1 wt % of the alloy. ### Claim 3 (depends on 1) The light emitting device of claim 1, wherein the first metal comprises silver or aluminum. ### Claim 4 (depends on 1) The light emitting device of claim 1, wherein the alloy containing the first metal and indium, zinc, or indium-zinc comprises silver-indium alloy, aluminum-indium alloy, silver-zinc alloy, aluminum-zinc alloy, silver-indium-zinc alloy, or aluminum-indium-zinc alloy. ### Claim 5 A light emitting device comprising: a substrate; a first electrode disposed on the substrate, the first electrode comprising a first patterned conductive layer, the first patterned conductive layer comprising an alloy containing a first metal and a second metal; a passivation layer at least disposed on a side surface of the first electrode, the passivation layer comprising a compound of the second metal, wherein a work function of the compound of the second metal ranges from about 4.8 to about 5.5; a second electrode disposed on the first electrode; and a light emitting layer disposed between the first electrode and the second electrode. ### Claim 6 (depends on 5) The light emitting device of claim 5, wherein the first metal comprises silver or aluminum. ### Claim 7 (depends on 5) The light emitting device of claim 5, wherein the second metal comprises indium or zinc, and the compound of the second metal comprises indium oxide, zinc oxide, or indium-zinc oxide. ### Claim 8 (depends on 5) The light emitting device of claim 5, wherein the alloy containing the first metal and the second metal further comprises another metal. ### Claim 9 (depends on 5) The light emitting device of claim 5, wherein the alloy containing the first metal and the second metal comprises silver-indium alloy, aluminum-indium alloy, silver-zinc alloy, aluminum-zinc alloy, silver-indium-zinc alloy, or aluminum-indium-zinc alloy. ### Claim 10 (depends on 5) The light emitting device of claim 5, wherein the passivation layer is further disposed on a top surface of the first electrode. ### Claim 11 (depends on 5) The light emitting device of claim 5, wherein the first electrode further comprises a second patterned conductive layer located between the first patterned conductive layer and the substrate. ### Claim 12 (depends on 11) The light emitting device of claim 11, wherein the second patterned conductive layer comprises indium-tin oxide, zinc-tin oxide, or indium-zinc oxide. ### Claim 13 (depends on 5) The light emitting device of claim 5, wherein the first electrode further comprises a second patterned conductive layer and a third patterned conductive layer, and the first patterned conductive layer is disposed between the second patterned conductive layer and the third patterned conductive layer. ### Claim 14 (depends on 13) The light emitting device of claim 13, wherein the second patterned conductive layer and the third patterned conductive layer comprise indium-tin oxide, zinc-tin oxide, or indium-zinc oxide. ### Claim 15 (depends on 5) The light emitting device of claim 5, further comprising a hole injection layer disposed between the first electrode and the light emitting layer. ### Claim 16 A manufacturing method of a light emitting device, comprising: forming a first electrode on a substrate, the first electrode comprising a first patterned conductive layer, the first patterned conductive layer comprising an alloy containing a first metal and a second metal; performing an annealing process on the first electrode to form a passivation layer at least on a side surface of the first electrode, wherein the passivation layer comprises a compound of the second metal; forming a light emitting layer on the first electrode; and forming a second electrode on the light emitting layer. ### Claim 17 (depends on 16) The manufacturing method of the light emitting device of claim 16, wherein the first metal comprises silver or aluminum. ### Claim 18 (depends on 16) The manufacturing method of the light emitting device of claim 16, wherein the second metal comprises indium, zinc, or indium-zinc, and the compound of the second metal comprises indium oxide, zinc oxide, or indium-zinc oxide. ### Claim 19 (depends on 16) The manufacturing method of the light emitting device of claim 16, wherein the alloy containing the first metal and the second metal comprises silver-indium alloy, aluminum-indium alloy, silver-zinc alloy, aluminum-zinc alloy, or a combination thereof. ### Claim 20 (depends on 16) The manufacturing method of the light emitting device of claim 16, wherein the passivation layer is further formed on a top surface of the first electrode. ### Claim 21 (depends on 16) The manufacturing method of the light emitting device of claim 16, wherein the first electrode further comprises a second patterned conductive layer disposed between the first patterned conductive layer and the substrate. ### Claim 22 (depends on 21) The manufacturing method of the light emitting device of claim 21, wherein the second patterned conductive layer comprises indium-tin oxide, zinc-tin oxide, or indium-zinc oxide. ### Claim 23 (depends on 16) The manufacturing method of the light emitting device of claim 16, wherein the first electrode further comprises a second patterned conductive layer and a third patterned conductive layer, and the first patterned conductive layer is disposed between the second patterned conductive layer and the third patterned conductive layer. ### Claim 24 (depends on 23) The manufacturing method of the light emitting device of claim 23, wherein the second patterned conductive layer and the third patterned conductive layer comprise indium-tin oxide, zinc-tin oxide, or indium-zinc oxide. ### Claim 25 (depends on 16) The manufacturing method of the light emitting device of claim 16, further comprising forming a hole injection layer between the first electrode and the light emitting layer.