# US 2013/0153947 A1 · Light-emitting device

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- Number: US 2013/0153947 A1
- Document ID: US20130153947A1
- Status: Published application
- Kind: A1
- Application number: 13/713,923
- Filed: 2012-12-13
- Published: 2013-06-20
- Earliest claimed: 2011-12-16
- Assignees: LG Innotek Co., Ltd.
- Inventors: Hyun Soo LIM; Kwon Tae CHO; Su Ik PARK
- Web page: https://patentgrep.com/patent/US20130153947A1

## CPC

- H10H 20/855: Optical field-shaping means, e.g. lenses
- H10H 20/82: Roughened surfaces, e.g. at the interface between epitaxial layers
- H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings
- H10H 20/819: characterised by their shape, e.g. curved or truncated substrates
- H10H 20/872: {Periodic patterns for optical field-shaping, e.g. photonic bandgap structures}
- H10H 20/882: {Scattering means (H10H20/82 takes precedence)}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

A light-emitting device, a method of fabricating the light-emitting device, a light-emitting device package and a lighting system are provided. The light-emitting device may include a substrate 105; a first conductivity type semiconductor layer 12 disposed on the substrate 105; an active layer 114 disposed on the first conductivity type semiconductor layer 12; a second conductivity type semiconductor layer 16 disposed on the active layer 114; a first electrode 131 disposed on the first conductivity type semiconductor layer 112; a second electrode 132 disposed on the second conductivity type semiconductor layer 116; a first light extraction pattern P provided on a top surface of the substrate 105; and a second light extraction pattern 150 provided on sides of the substrate 105.

## Claims

### Claim 1

A light-emitting device comprising:
a substrate;
a first conductivity type semiconductor layer disposed on the substrate;
an active layer disposed on the first conductivity type semiconductor layer;
a second conductivity type semiconductor layer disposed on the active layer;
a first electrode disposed on the first conductivity type semiconductor layer;
a second electrode disposed on the second conductivity type semiconductor layer;
a first light extraction pattern provided on a top surface of the substrate; and
a second light extraction pattern provided on sides of the substrate.

### Claim 2 (depends on 1)

The light-emitting device of claim 1, wherein the first light extraction pattern comprises the same material as the substrate, and the second light extraction pattern comprises a different material from the substrate.

### Claim 3 (depends on 1)

The light-emitting device of claim 1, wherein a refractive index of the second light extraction pattern is greater than a refractive index of the substrate.

### Claim 4 (depends on 3)

The light-emitting device of claim 3, wherein the second light extraction pattern comprises a silicone material.

### Claim 5 (depends on 1)

The light-emitting device of claim 1, wherein the second light extraction pattern is formed of a transmissive material.

### Claim 6 (depends on 1)

The light-emitting device of claim 1, wherein the second light extraction pattern comprises a plurality of patterns, and the plurality of patterns have different sizes and shapes.

### Claim 7 (depends on 1)

The light-emitting device of claim 1, wherein the second light extraction pattern comprises a first pattern and a second pattern, and the first pattern and the second pattern have different sizes.

### Claim 8 (depends on 7)

The light-emitting device of claim 7, wherein the first pattern is larger in size than the second pattern, and the first pattern is disposed closer than the second pattern to the active layer.

### Claim 9 (depends on 1)

The light-emitting device of claim 1, wherein the second light extraction pattern comprises at least a fourth pattern and a fifth pattern, and the fourth pattern and the fifth pattern have different shapes.

### Claim 10 (depends on 9)

The light-emitting device of claim 9, wherein the fourth pattern includes a triangular shape, and the fifth pattern includes a hemispherical shape.

### Claim 11 (depends on 1)

The light-emitting device of claim 1, wherein the second light extraction pattern is arranged on the bottom surface of the substrate in the form of parallel lines.

### Claim 12 (depends on 1)

The light-emitting device of claim 1, wherein the size of the second light extraction pattern is about 1/10 to about ⅕ of the thickness of the substrate.

### Claim 13 (depends on 1)

The light-emitting device of claim 1, further comprising a third light extraction pattern formed on sides of the first conductivity type semiconductor layer.

### Claim 14 (depends on 13)

The light-emitting device of claim 13, wherein the third light extraction pattern is formed of the same material as the second light extraction pattern.

### Claim 15 (depends on 14)

The light-emitting device of claim 14, wherein the third light extraction pattern is formed of a different material from the second light extraction pattern.

### Claim 16 (depends on 15)

The light-emitting device of claim 15, wherein the third light extraction pattern is formed by etching a side surface of the first conductivity type semiconductor layer.

### Claim 17 (depends on 1)

The light-emitting device of claim 1, further comprising a fourth light extraction pattern formed on the bottom surface of the substrate.

### Claim 18 (depends on 17)

The light-emitting device of claim 17, wherein the fourth light extraction pattern is formed of a different material from the substrate.

### Claim 19 (depends on 18)

The light-emitting device of claim 18, wherein the fourth light extraction pattern is formed of the same material as the second light extraction pattern.

### Claim 20 (depends on 17)

The light-emitting device of claim 17, wherein the fourth light extraction pattern includes the same material as the substrate.