# US 2013/0153918 A1 · REO-Si TEMPLATE WITH INTEGRATED REO LAYERS FOR LIGHT EMISSION > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2013/0153918 A1 - Document ID: US20130153918A1 - Status: Published application - Kind: A1 - Application number: 13/328,194 - Filed: 2011-12-16 - Published: 2013-06-20 - Earliest claimed: 2011-12-16 - Inventors: Andrew Clark; Michael Lebby - Web page: https://patentgrep.com/patent/US20130153918A1 ## CPC - H10H 20/8513: {having two or more wavelength conversion materials} - H10H 20/8512: {Wavelength conversion materials} - H10H 20/01335: {the light-emitting regions comprising nitride materials} - H10H 20/0361: {of wavelength conversion means} - H10H 20/815: having stress relaxation structures, e.g. buffer layers - H10H 20/819: characterised by their shape, e.g. curved or truncated substrates - H10H 20/8515: {not being in contact with the bodies} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract A III-N on silicon LED constructed to emit light in the visible range includes a layer of single crystal III-N with a light emitting diode formed therein and designed to emit light at a first wavelength through a lower surface, a REO-Si template mated to the layer of single crystal III-N and designed to approximately crystal lattice match a silicon substrate, and a light emission layer of rare earth oxide selected to receive and absorb light at the first wavelength, up-convert the absorbed light, and re-emit light at a second wavelength in the visible range. The lower surface of the REO-Si template is either mated to the upper surface of a crystalline silicon substrate with the light emission layer integrated into the REO-Si template or mated to an upper surface of the light emission layer with a lower surface of the light emission layer mated to the crystalline silicon substrate. ## Claims ### Claim 1 A III-N on silicon light emitting diode constructed to emit light in the visible range comprising: a crystalline silicon substrate having an upper surface and a lower surface; a layer of single crystal III-N nitride with a light emitting diode formed therein and designed to emit light at a first wavelength through a lower surface; a REO-Si template with an upper surface mated to the lower surface of the layer of single crystal III-N nitride and a lower surface designed to approximately crystal lattice match the upper surface of the silicon substrate; a light emission layer of single crystal rare earth oxide selected to receive and absorb light at the first wavelength, up-convert the absorbed light, and re-emit light at a second wavelength in the visible range; and the lower surface of the REO-Si template being one of mated to the upper surface of the crystalline silicon substrate with the light emission layer integrated into the REO-Si template and mated to an upper surface of the light emission layer with a lower surface of the light emission layer mated to the crystalline silicon substrate. ### Claim 2 (depends on 1) A III-N on silicon light emitting diode as claimed in claim 1 wherein the light emission layer includes a ternary alloy of rare earth oxides. ### Claim 3 (depends on 2) A III-N on silicon light emitting diode as claimed in claim 2 wherein the light emission layer includes the ternary alloy (RE1-x, REAx)2O3r where the REA has at least one requisite optical transition and x is in a range of >0 to <1. ### Claim 4 (depends on 3) A III-N on silicon light emitting diode as claimed in claim 3 wherein the ternary alloy includes (GdxEr1-x)2O3, where x is in a range of 0.05 to 0.25. ### Claim 5 (depends on 1) A III-N on silicon light emitting diode as claimed in claim 1 wherein the first wavelength is above 1200 nm and the second wavelength in a range of approximately 400 nm to 800 nm. ### Claim 6 (depends on 4) A III-N on silicon light emitting diode as claimed in claim 4 wherein the first wavelength is approximately 1540 nm and the second wavelength is approximately 495 nm. ### Claim 7 (depends on 4) A III-N on silicon light emitting diode as claimed in claim 4 wherein the layer of single crystal III-N nitride is designed to emit light at the first wavelength and simultaneously at a second wavelength, different than the first wavelength, through a lower surface. ### Claim 8 (depends on 7) A III-N on silicon light emitting diode as claimed in claim 7 wherein the layer of single crystal III-N nitride includes GaN doped with rare earths to emit light at the first and second wavelengths. ### Claim 9 (depends on 7) A III-N on silicon light emitting diode as claimed in claim 7 further including a second light emission layer of rare earth oxide selected to receive and absorb light at a third wavelength, up-convert the absorbed light, and re-emit light at a fourth wavelength in the visible range ### Claim 10 (depends on 9) A III-N on silicon light emitting diode as claimed in claim 9 wherein the second light emission layer is one of integrated into the REO-Si template and mated to a lower surface of the first light emission layer with a lower surface of the second light emission layer mated to the crystalline silicon substrate. ### Claim 11 (depends on 1) A III-N on silicon light emitting diode as claimed in claim 1 wherein the light emitting diode is designed to emit light at a plurality of different wavelengths through a lower surface and light emission layers of single crystal rare earth oxide selected to receive and absorb light at more than one of the different wavelengths are included. ### Claim 12 A III-N on silicon light emitting diode constructed to emit light in the visible range comprising: a crystalline silicon substrate having an upper surface and a lower surface; a layer of single crystal III-N nitride with a light emitting diode formed therein and designed to emit light at a first wavelength through a lower surface; a REO-Si template with an upper surface mated to the lower surface of the layer of single crystal III-N nitride and a lower surface designed to approximately crystal lattice match the upper surface of the silicon substrate; and a light emission layer of rare earth oxide selected to receive and absorb light at the first wavelength, up-convert the absorbed light, and re-emit light at a second wavelength in the visible range, and a lower surface of the light emission layer being mated to the upper surface of the crystalline silicon substrate and the upper surface of the light emission layer being mated to the lower surface of the REO-Si template. ### Claim 13 (depends on 12) A III-N on silicon light emitting diode as claimed in claim 12 wherein the light emission layer includes a ternary alloy of rare earth oxides. ### Claim 14 (depends on 13) A III-N on silicon light emitting diode as claimed in claim 13 wherein the light emission layer includes the ternary alloy (RE1-x, REAx)2O3, where the REA has requisite optical transitions and x is in a range of >0 to <1. ### Claim 15 A method of fabricating a III-N on silicon light emitting diode constructed to emit light in the visible range comprising the steps of and not necessarily in the order listed: providing a crystalline silicon substrate having an upper surface and a lower surface; epitaxially growing a layer of single crystal III-N nitride with a light emitting diode formed therein and designed to emit light at a first wavelength through a lower surface; epitaxially growing a REO-Si template with an upper surface mated to the lower surface of the layer of single crystal III-N nitride and a lower surface designed to approximately crystal lattice match the upper surface of the silicon substrate; epitaxially growing a light emission layer of single crystal rare earth oxide selected to receive and absorb light at the first wavelength, up-convert the absorbed light, and re-emit light at a second wavelength in the visible range; and mating the lower surface of the REO-Si template to one of the upper surface of the crystalline silicon substrate with the light emission layer integrated into the REO-Si template or to an upper surface of the light emission layer with a lower surface of the light emission layer mated to the crystalline silicon substrate. ### Claim 16 (depends on 15) A method as claimed in claim 15 wherein the step of epitaxially growing the light emission layer includes epitaxially growing a ternary alloy of rare earth oxides. ### Claim 17 (depends on 16) A method as claimed in claim 16 wherein the step of epitaxially growing the light emission layer includes growing the ternary alloy (RE1-x REAx)2O3, where the REA has requisite optical transitions and x is in a range of >0 to <1. ### Claim 18 (depends on 15) A method as claimed in claim 15 further including a step of epitaxially growing a second light emission layer of single crystal rare earth oxide and selecting the second light emission layer to receive and absorb light at a third wavelength, up-convert the absorbed light, and re-emit light at a fourth wavelength in the visible range, wherein the second light emission layer is one of integrated into the REO-Si template and mated to a lower surface of the first light emission layer with a lower surface of the second light emission layer mated to the crystalline silicon substrate. ### Claim 19 A method of fabricating a III-N on silicon light emitting diode constructed to emit light in the visible range comprising the steps of: providing a crystalline silicon substrate having an upper surface and a lower surface; epitaxially growing a light emission layer of single crystal rare earth oxide on the upper surface of the crystalline silicon substrate, and selecting the light emission layer to receive and absorb light at a first wavelength, up-convert the absorbed light, and re-emit light at a second wavelength in the visible range; epitaxially growing a REO-Si template on the light emission layer with a lower surface mated to an upper surface of the light emission layer; and epitaxially growing a layer of single crystal III-N nitride on an upper surface of the REO-Si template, designing the layer of single crystal III-N nitride to emit light at the first wavelength through a lower surface, and forming a light emitting diode in/on the layer of single crystal III-N nitride. ### Claim 20 (depends on 19) A method as claimed in claim 19 wherein the step of epitaxially growing the light emission layer includes epitaxially growing a ternary alloy of rare earth oxides. ### Claim 21 (depends on 20) A method as claimed in claim 20 wherein the step of epitaxially growing the light emission layer includes growing the ternary alloy (RE1-x REAx)2O3, where the REA has requisite optical transitions and x is in a range of >0 to <1.