# US 2013/0153906 A1 · Thin film transistor array panel having improved storage capacitance and manufacturing method thereof

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- Number: US 2013/0153906 A1
- Document ID: US20130153906A1
- Status: Published application
- Kind: A1
- Application number: 13/668,082
- Filed: 2012-11-02
- Published: 2013-06-20
- Earliest claimed: 2005-02-25
- Assignees: Samsung Display Co., Ltd.
- Inventors: Hye-Young RYU; Jang-Soo KIM; Sang-Gab KIM; Hong-Kee CHIN; Min-Seok OH; Hee-Hwan CHOE; Shi-Yul KIM
- Web page: https://patentgrep.com/patent/US20130153906A1

## CPC

- G02F 1/136286: {Wiring, e.g. gate line, drain line}
- G02F 1/133345: {Insulating layers (G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence)}
- G02F 1/1362: Active matrix addressed cells {(G02F1/134336, G02F1/134363 take precedence)}
- G02F 1/136222: {Colour filters incorporated in the active matrix substrate}
- G02F 2202/02: organic material
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS

## Abstract

A thin film transistor array panel is provided, which includes a gate line, a data line intersecting the gate line, a storage electrode apart from the gate and data lines, a thin film transistor connected to the gate and data lines and having a drain electrode, a pixel electrode connected to the drain electrode, a first insulating layer over the thin film transistor and disposed under the pixel electrode, and a second insulating layer disposed on the first insulating layer and having an opening exposing the first insulating layer on the storage electrode.

## Claims

### Claim 1

A thin film transistor array panel, comprising:
a gate line;
a data line intersecting the gate line;
a semiconductor disposed under the data line;
a thin film transistor connected to the gate line and the data line and having a drain electrode;
a first insulating layer disposed on the data line and comprising an organic material;
a pixel electrode disposed on the first insulating layer and connected to the drain electrode;
a shielding electrode disposed in the same layer as the pixel electrode and transmitting a common voltage, the shielding electrode comprising a first portion extending along the data line and covering the data line.

### Claim 2 (depends on 1)

The thin film transistor array panel of claim 1, wherein the shielding electrode completely covers boundary edges of the data line.

### Claim 3 (depends on 2)

The thin film transistor array panel of claim 2, wherein the shielding electrode overlaps at least a portion of the gate line.

### Claim 4 (depends on 3)

The thin film transistor array panel of claim 3, wherein the shielding electrode comprises a second portion extending along the gate line.

### Claim 5 (depends on 4)

The thin film transistor array panel of claim 4, wherein a width of the shielding electrode is greater than a width of the data line.

### Claim 6 (depends on 5)

The thin film transistor array panel of claim 5, wherein the width of the shielding electrode is less than a width of the gate line.

### Claim 7 (depends on 4)

The thin film transistor array panel of claim 4, wherein the width of the shielding electrode is less than a width of the gate line.

### Claim 8 (depends on 3)

The thin film transistor array panel of claim 3, wherein a width of the shielding electrode is greater than a width of the data line.

### Claim 9 (depends on 8)

The thin film transistor array panel of claim 8, wherein the width of the shielding electrode is less than a width of the gate line.

### Claim 10 (depends on 3)

The thin film transistor array panel of claim 3, wherein the width of the shielding electrode is less than a width of the gate line.

### Claim 11 (depends on 2)

The thin film transistor array panel of claim 2, wherein the shielding electrode comprises a second portion extending along the gate line.

### Claim 12 (depends on 11)

The thin film transistor array panel of claim 11, wherein a width of the shielding electrode is greater than a width of the data line.

### Claim 13 (depends on 12)

The thin film transistor array panel of claim 12, wherein the width of the shielding electrode is less than a width of the gate line.

### Claim 14 (depends on 11)

The thin film transistor array panel of claim 11, wherein the width of the shielding electrode is less than a width of the gate line.

### Claim 15 (depends on 2)

The thin film transistor array panel of claim 2, wherein a width of the shielding electrode is greater than a width of the data line.

### Claim 16 (depends on 15)

The thin film transistor array panel of claim 15, wherein the width of the shielding electrode is less than a width of the gate line.

### Claim 17 (depends on 2)

The thin film transistor array panel of claim 2, wherein the width of the shielding electrode is less than a width of the gate line.

### Claim 18 (depends on 1)

The thin film transistor array panel of claim 1, wherein the shielding electrode overlaps at least a portion of the gate line.

### Claim 19 (depends on 18)

The thin film transistor array panel of claim 18, wherein the shielding electrode comprises a second portion extending along the gate line.

### Claim 20 (depends on 19)

The thin film transistor array panel of claim 19, wherein a width of the shielding electrode is greater than a width of the data line.

### Claim 21 (depends on 20)

The thin film transistor array panel of claim 20, wherein the width of the shielding electrode is less than a width of the gate line.

### Claim 22 (depends on 19)

The thin film transistor array panel of claim 19, wherein the width of the shielding electrode is less than a width of the gate line.

### Claim 23 (depends on 18)

The thin film transistor array panel of claim 18, wherein a width of the shielding electrode is greater than a width of the data line.

### Claim 24 (depends on 23)

The thin film transistor array panel of claim 23, wherein the width of the shielding electrode is less than a width of the gate line.

### Claim 25 (depends on 18)

The thin film transistor array panel of claim 18, wherein the width of the shielding electrode is less than a width of the gate line.

### Claim 26 (depends on 1)

The thin film transistor array panel of claim 1, wherein the shielding electrode comprises a second portion extending along the gate line.

### Claim 27 (depends on 26)

The thin film transistor array panel of claim 26, wherein a width of the shielding electrode is greater than a width of the data line.

### Claim 28 (depends on 27)

The thin film transistor array panel of claim 27, wherein the width of the shielding electrode is less than a width of the gate line.

### Claim 29 (depends on 26)

The thin film transistor array panel of claim 26, wherein the width of the shielding electrode is less than a width of the gate line.

### Claim 30 (depends on 1)

The thin film transistor array panel of claim 1, wherein a width of the shielding electrode is greater than a width of the data line.

### Claim 31 (depends on 30)

The thin film transistor array panel of claim 30, wherein the width of the shielding electrode is less than a width of the gate line.

### Claim 32 (depends on 1)

The thin film transistor array panel of claim 1, wherein the width of the shielding electrode is less than a width of the gate line.