# US 2013/0153897 A1 · Power bipolar structure, in particular for high voltage applications > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2013/0153897 A1 - Document ID: US20130153897A1 - Status: Published application - Kind: A1 - Application number: 13/714,013 - Filed: 2012-12-13 - Published: 2013-06-20 - Earliest claimed: 2011-12-15 - Assignees: STMicroelectronics S.r.l. - Inventors: Giuseppe Scilla - Web page: https://patentgrep.com/patent/US20130153897A1 ## CPC - H10D 10/00: Bipolar junction transistors [BJT] - H03K 17/08126: {in bipolar transitor switches} - H03K 17/0826: {in bipolar transistor switches} - H03K 17/12: Modifications for increasing the maximum permissible switched current - H03K 17/14: Modifications for compensating variations of physical values, e.g. of temperature - H10D 84/121: {BJTs having built-in components} - H10D 89/10: Integrated device layouts - G01R 19/0092: {Measuring current only} - H03K 2217/0027: Measuring means of, e.g. currents through or voltages across the switch - H10B 99/00: Subject matter not provided for in other groups of this subclass - H10D 62/126: {Top-view geometrical layouts of the regions or the junctions} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H03K: PULSE TECHNIQUE (measuring pulse characteristics G01R; modulating sinusoidal oscillations with pulses H03C; transmission of digital information H04L; discriminator circuits detecting phase difference between two signals by counting or integrating cycles of oscillation H03D3/04; automatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses where the type of generator is irrelevant or unspecified H03L; coding, decoding or code conversion, in general H03M) - G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12) - H10B: ELECTRONIC MEMORY DEVICES ## Abstract A power bipolar structure is described having at least one first, one second and one third terminal and including at least one power bipolar transistor having a finger structure coupled to at least one driving block. The power bipolar transistor includes at least one elemental bipolar cell connected to these first, second and third terminals and including at least one power elemental bipolar structure corresponding to a finger of the power bipolar transistor, electrically coupled between the first and second terminals and coupled to a driving section of the driving block by at least one sensing section able to detect information on the operation of the power elemental bipolar structure, the sensing section being in turn coupled to a control circuit and supplying it with a current value as a function of the local temperature of the power elemental bipolar structure. ## Claims ### Claim 1 A power bipolar structure, comprising: first, second, and third terminals; and a power bipolar transistor having a first elemental bipolar cell electrically coupled to said first, second, and third terminals and including: a first elemental power bipolar structure, corresponding to a first finger of said power bipolar transistor, electrically coupled between said first and second terminals; a first driving block that includes a first driving section coupled to the first elemental power bipolar structure; a first control circuit configured to control the first elemental power bipolar structure; and a first sensing section configured to detect information regarding operation of said first elemental power bipolar structure, said first sensing section being configured to supply the first control circuit with a current that depends on a local temperature of said first elemental power bipolar structure. ### Claim 2 (depends on 1) A power bipolar structure according to claim 1, wherein said driving section is electrically coupled between said first terminal and a first inner circuit node and includes a driving bipolar transistor, said first inner circuit node being electrically coupled to a base terminal of said power bipolar elemental structure. ### Claim 3 (depends on 2) A power bipolar structure according to claim 2, wherein said sensing section is electrically coupled between said first terminal and a second inner circuit node and includes a sensing bipolar transistor, having in turn a base terminal connected to said base terminal of said elemental power bipolar structure and to said first inner circuit node. ### Claim 4 (depends on 3) A power bipolar structure according to claim 3, wherein said sensing bipolar transistor is configured to have a base-emitter voltage that follows a value of a base-emitter voltage of said elemental power bipolar structure and supply a collector current that is a function of the temperature of said elemental power bipolar structure. ### Claim 5 (depends on 1) A power bipolar structure according to claim 1, wherein said control circuit is electrically coupled to said second terminal and to the base terminal of said elemental power bipolar structure, said control circuit including a bipolar transistor current mirror configured to draw a current surplus from said base terminal of said power bipolar elemental structure towards said second terminal. ### Claim 6 (depends on 5) A power bipolar structure according to claim 5, wherein: said driving section is electrically coupled between said first terminal and a first inner circuit node and includes a driving bipolar transistor, said first inner circuit node being electrically coupled to a base terminal of said power bipolar elemental structure; said sensing section includes a sensing bipolar transistor electrically coupled between said first terminal and a second inner circuit node and having a base terminal electrically coupled to said base terminal of said elemental power bipolar structure and to said first inner circuit node; and said control circuit is electrically coupled to said first and second inner circuit nodes and to said second terminal, said control circuit including first and second feedback bipolar transistors, said first feedback bipolar transistor being electrically coupled between said first inner circuit node and said second terminal and having a base terminal electrically coupled to a base terminal of said second feedback bipolar transistor, the second feedback bipolar transistor being electrically coupled between said second inner circuit node and said second terminal, said base terminal of said second feedback bipolar transistor being electrically coupled to said second inner circuit node. ### Claim 7 (depends on 1) A power bipolar structure according to claim 1, wherein the power bipolar transistor includes a second elemental bipolar cell electrically coupled in parallel to the first elemental bipolar cell, between said first and second terminals and electrically coupled to said third terminal, the second elemental bipolar cell including: a second elemental power bipolar structure, corresponding to a second finger of said power bipolar transistor, electrically coupled between said first and second terminals; a second driving block that includes a first driving section coupled to the second elemental power bipolar structure; a second control circuit configured to control the second elemental power bipolar structure; and a second sensing section configured to detect information regarding operation of said second elemental power bipolar structure, said second sensing section being configured to supply the second control circuit with a current value that depends on a local temperature of said second elemental power bipolar structure. ### Claim 8 (depends on 7) A power bipolar structure according to claim 7, wherein said sensing sections of said elemental bipolar cells are included in a sensing block of said power bipolar structure. ### Claim 9 (depends on 7) A power bipolar structure according to claim 7, wherein said control circuits of said elemental bipolar cells are included in a control block of said power bipolar structure. ### Claim 10 (depends on 1) A power bipolar structure according to claim 1, comprising at least one elemental bipolar cell for each emitter finger. ### Claim 11 (depends on 1) A power bipolar structure according to claim 1, comprising a plurality of elemental bipolar cells for each emitter finger. ### Claim 12 A power bipolar structure, comprising: first, second, and third terminals; and a power bipolar transistor having a first elemental bipolar cell electrically coupled to said first, second, and third terminals and including: a first elemental power bipolar structure, corresponding to a first finger of said power bipolar transistor, electrically coupled between said first and second terminals; a first sensing section configured to detect information regarding operation of said first elemental power bipolar structure, said first sensing section being configured to supply a current that depends on a local temperature of said first elemental power bipolar structure; and a first control circuit configured to draw current from a base terminal of the first elemental power bipolar structure based on the current supplied by the first sensing section. ### Claim 13 (depends on 12) A power bipolar structure according to claim 12, wherein the power bipolar transistor includes a driving bipolar transistor electrically coupled between said first terminal and a first inner circuit node, said first inner circuit node being electrically coupled to the base terminal of the first power bipolar elemental structure. ### Claim 14 (depends on 13) A power bipolar structure according to claim 13, wherein said first sensing section includes a sensing bipolar transistor electrically coupled between said first terminal and a second inner circuit node and having a base terminal connected to said base terminal of said elemental power bipolar structure and to said first inner circuit node. ### Claim 15 (depends on 14) A power bipolar structure according to claim 14, wherein said sensing bipolar transistor is configured to have a base-emitter voltage that follows a value of a base-emitter voltage of said elemental power bipolar structure and supply a collector current that is a function of the temperature of said elemental power bipolar structure. ### Claim 16 (depends on 14) A power bipolar structure according to claim 14, wherein said control circuit includes a bipolar transistor current mirror configured to draw the current from said base terminal of said power bipolar elemental structure towards said second terminal. ### Claim 17 (depends on 16) A power bipolar structure according to claim 16, wherein: said driving section includes a driving bipolar transistor electrically coupled between said first terminal and a first inner circuit node that is electrically coupled to the base terminal of said power bipolar elemental structure; said sensing section includes a sensing bipolar transistor electrically coupled between said first terminal and a second inner circuit node and having a base terminal electrically coupled to said base terminal of said elemental power bipolar structure and to said first inner circuit node; and said control circuit is electrically coupled to said first and second inner circuit nodes and to said second terminal, said control circuit including first and second feedback bipolar transistors, said first feedback bipolar transistor being electrically coupled between said first inner circuit node and said second terminal and having a base terminal connected to a base terminal of said second feedback bipolar transistor, the second feedback bipolar transistor being electrically coupled between said second inner circuit node and said second terminal, said base terminal of said second feedback bipolar transistor being electrically coupled to said second inner circuit node. ### Claim 18 (depends on 1) A power bipolar structure according to claim 1, wherein the power bipolar transistor includes a second elemental bipolar cell electrically coupled in parallel to the first elemental bipolar cell, between said first and second terminals and electrically coupled to said third terminal, the second elemental bipolar cell including: a second elemental power bipolar structure, corresponding to a second finger of said power bipolar transistor, electrically coupled between said first and second terminals; a second sensing section configured to detect information regarding operation of said second elemental power bipolar structure, said second sensing section being configured to supply a current that depends on a local temperature of said second elemental power bipolar structure; and a second control circuit configured to draw current from a base terminal of the second elemental power bipolar structure based on the current supplied by the second sensing section. ### Claim 19 A power bipolar structure, comprising: first, second, and third terminals; and a power bipolar transistor having a first elemental bipolar cell electrically coupled to said first, second, and third terminals and including: a first elemental power bipolar structure, corresponding to a first finger of said power bipolar transistor, electrically coupled between said first and second terminals; first means for detecting information regarding operation of said first elemental power bipolar structure, supplying a first current that depends on a local temperature of said first elemental power bipolar structure; and drawing a second current from a base terminal of the first elemental power bipolar structure based on the first current. ### Claim 20 (depends on 19) A power bipolar structure according to claim 19, wherein the first elemental bipolar cell includes a driving bipolar transistor electrically coupled between said first terminal and a first inner circuit node, said first inner circuit node being electrically coupled to the base terminal of the first power bipolar elemental structure. ### Claim 21 (depends on 20) A power bipolar structure according to claim 20, wherein said first means include a sensing bipolar transistor electrically coupled between said first terminal and a second inner circuit node and having a base terminal connected to said base terminal of said elemental power bipolar structure and to said first inner circuit node. ### Claim 22 (depends on 21) A power bipolar structure according to claim 21, wherein said sensing bipolar transistor is configured to have a base-emitter voltage that follows a value of a base-emitter voltage of said elemental power bipolar structure and supply a collector current that is a function of the temperature of said elemental power bipolar structure. ### Claim 23 (depends on 21) A power bipolar structure according to claim 21, wherein said first means include a bipolar transistor current mirror configured to draw the second current from said base terminal of said power bipolar elemental structure towards said second terminal.