# US 2013/0153893 A1 · Display and electronic unit

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- Number: US 2013/0153893 A1
- Document ID: US20130153893A1
- Status: Published application
- Kind: A1
- Application number: 13/722,339
- Filed: 2012-12-20
- Published: 2013-06-20
- Earliest claimed: 2011-12-20
- Assignees: Sony Corporation
- Inventors: Narihiro Morosawa; Toshiaki Arai
- Web page: https://patentgrep.com/patent/US20130153893A1

## CPC

- H10D 86/60: wherein the TFTs are in active matrices
- G02F 1/1368: in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)}
- H10D 30/6713: {characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes}
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 30/6756: {Amorphous oxide semiconductors}
- H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)}
- H10D 62/402: {Amorphous materials}
- H10D 62/80: characterised by the materials
- H10D 86/021: {of multiple TFTs}
- H10D 86/0221: {comprising manufacture, treatment or patterning of TFT semiconductor bodies}
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/481: {integrated with passive devices, e.g. auxiliary capacitors}
- H10K 59/1213: {the pixel elements being TFTs}
- H10K 59/1216: {the pixel elements being capacitors}
- G02F 1/136213: {Storage capacitors associated with the pixel electrode}
- H10K 59/1201: {Manufacture or treatment}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A display device includes a display element, a transistor configured to drive the display element, the transistor including a channel region, and a retention capacitor. An oxide semiconductor film is provided in areas across the transistor and the retention capacitor, the oxide semiconductor film including a first region formed in the channel region of the transistor, and a second region having a lower resistance than that of the first region. The second region is formed in the areas of the transistor and retention capacitor other than in the channel region.

## Claims

### Claim 1

A display device comprising:
a display element;
a transistor configured to drive the display element, the transistor including a channel region; and
a retention capacitor,
wherein an oxide semiconductor film is provided in areas across the transistor and the retention capacitor, the oxide semiconductor film including
a first region formed in the channel region of the transistor, and
a second region having a lower resistance than that of the first region, the second region formed in the areas of the transistor and retention capacitor other than in the channel region.

### Claim 2 (depends on 1)

The display device according to claim 1, further comprising a gate insulating film formed on the oxide semiconductor film in the first region.

### Claim 3 (depends on 1)

The display device according to claim 1, further comprising a high-resistance film and an interlayer insulating film provided to cover the oxide semiconductor film in the first region and the second region.

### Claim 4 (depends on 1)

The display device according to claim 1, wherein the oxide semiconductor film is formed of an oxide semiconductor containing one or more of indium (In), gallium (Ga), zinc (Zn), silicon (Si), and tin (Sn).

### Claim 5 (depends on 1)

The display device according to claim 1, wherein the oxide semiconductor film includes at least one of:
(a) an amorphous semiconductor selected from the group consisting of indium tin zinc oxide (ITZO) and indium gallium zinc oxide (IGZO or InGaZnO); and
(b) a crystalline oxide semiconductor selected from the group consisting of zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium oxide (IGO), ITO, and indium oxide (InO).

### Claim 6 (depends on 1)

The display device according to claim 1, wherein the first and second regions of the oxide semiconductor film are formed of the same base materials, and the second region further includes a metal that has reacted and diffused into an upper surface of the oxide semiconductor film.

### Claim 7 (depends on 1)

The display device according to claim 1, wherein the second region includes regions corresponding to an electrode of the retention capacitor, and source and drain regions in the transistor.

### Claim 8 (depends on 3)

The display device according to claim 3, wherein the interlayer insulating film includes an inorganic insulating film formed on the high-resistance film, and an organic insulating film formed on the inorganic insulating film.

### Claim 9 (depends on 8)

The display device according to claim 8, wherein a concentration of hydrogen contained in the inorganic insulating film is preferably equal to or lower than about 1×102° cm−3.

### Claim 10

An electronic apparatus comprising:
a display device including
a display element,
a transistor configured to drive the display element, the transistor including a channel region, and
a retention capacitor,
wherein a first oxide semiconductor film is formed in areas of the transistor and retention capacitor including the channel region, and a second lower resistance oxide semiconductor film is formed on the first oxide semiconductor film in the areas of the transistor and retention capacitor except in the channel region.

### Claim 11 (depends on 10)

The electronic apparatus according to claim 10, further comprising a high-resistance film and an interlayer insulating film provided to cover the oxide semiconductor film in the first region and the second region.

### Claim 12 (depends on 10)

The electronic apparatus according to claim 10, wherein the oxide semiconductor film is formed of an oxide semiconductor containing one or more of indium (In), gallium (Ga), zinc (Zn), silicon (Si), and tin (Sn).

### Claim 13 (depends on 10)

The electronic apparatus according to claim 10, wherein the first and second regions of the oxide semiconductor film are formed of the same base materials, and the second region further includes a metal that has reacted and diffused into an upper surface of the oxide semiconductor film.

### Claim 14 (depends on 10)

The electronic apparatus according to claim 10, wherein the second region includes regions corresponding to an electrode of the retention capacitor, and source and drain regions in the transistor.

### Claim 15

A method of manufacturing a display device including a display element, a transistor configured to drive the display element, and a retention capacitor, the method comprising:
forming an oxide semiconductor film in areas across the transistor and the retention capacitor, the oxide semiconductor film including
a first region formed in a channel region of the transistor, and
a second region having a lower resistance than that of the first region, the second region formed in the areas of the transistor and retention capacitor other than in the channel region.

### Claim 16 (depends on 15)

The method according to claim 15, further comprising forming a high-resistance film and an interlayer insulating film that cover the oxide semiconductor film in the first region and the second region.

### Claim 17 (depends on 15)

The method according to claim 15, wherein the oxide semiconductor film is formed of an oxide semiconductor containing one or more of indium (In), gallium (Ga), zinc (Zn), silicon (Si), and tin (Sn).

### Claim 18 (depends on 15)

The method according to claim 15, wherein the oxide semiconductor film includes at least one of:
(a) an amorphous semiconductor selected from the group consisting of indium tin zinc oxide (ITZO) and indium gallium zinc oxide (IGZO or InGaZnO); and
(b) a crystalline oxide semiconductor selected from the group consisting of zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium oxide (IGO), ITO, and indium oxide (InO).

### Claim 19 (depends on 15)

The method according to claim 15, wherein forming the oxide semiconductor film includes:
forming the entire oxide semiconductor film of the same base materials to form first and second regions of the oxide semiconductor film; and
modifying the second region by reacting and diffusing a metal into an upper surface of the oxide semiconductor film to thereby form the second region having a lower resistance than the first region.

### Claim 20 (depends on 15)

The method according to claim 15, wherein the second region includes regions corresponding to an electrode of the retention capacitor, and source and drain regions in the transistor.