# US 2013/0153877 A1 · Light-emitting device and manufacturing method thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2013/0153877 A1 - Document ID: US20130153877A1 - Status: Published application - Kind: A1 - Application number: 13/767,250 - Filed: 2013-02-14 - Published: 2013-06-20 - Earliest claimed: 2009-09-16 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Inventors: Shingo EGUCHI; Yoshiaki OIKAWA; Kenichi OKAZAKI; Hotaka MARUYAMA - Web page: https://patentgrep.com/patent/US20130153877A1 ## CPC - H10K 50/11: characterised by the electroluminescent [EL] layers - H10D 86/00: Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates - H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO} - H10D 86/60: wherein the TFTs are in active matrices - H10K 59/1213: {the pixel elements being TFTs} - H10K 59/126: Shielding, e.g. light-blocking means over the TFTs - H10K 59/131: Interconnections, e.g. wiring lines or terminals - H10K 77/111: {Flexible substrates} - H10D 30/6732: {Bottom-gate only TFTs} - H10D 30/6745: {Polycrystalline or microcrystalline silicon} - H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate} - H10D 86/441: {Interconnections, e.g. scanning lines} - Y02E 10/549: Organic PV cells - Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION - Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS ## Abstract An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer. ## Claims ### Claim 1 A semiconductor device comprising: a flexible substrate; a driving circuit portion over the flexible substrate, comprising: a first transistor comprising: a first gate over the flexible substrate; a gate insulating layer over the first gate; a first oxide semiconductor layer over the gate insulating layer; a first source over the first oxide semiconductor layer; a first drain over the first oxide semiconductor layer; and an oxide insulating layer over the first oxide semiconductor layer, the first source, and the first drain, at least a part of the oxide insulating layer being in contact with at least a part of the first oxide semiconductor layer between the first source and the first drain; a pixel portion over the flexible substrate, comprising: a second transistor comprising: a second gate over the flexible substrate; the gate insulating layer over the second gate; a second oxide semiconductor layer over the gate insulating layer; a second source over the second oxide semiconductor layer; a second drain over the second oxide semiconductor layer; and the oxide insulating layer over the second oxide semiconductor layer, the second source, and the second drain, at least a part of the oxide insulating layer being in contact with at least a part of the second oxide semiconductor layer between the second source and the second drain, a color filter over the oxide insulating layer; a first electrode layer over the color filter and electrically connected to the second transistor; an EL layer over the first electrode layer; and a second electrode layer over the EL layer, wherein the first transistor comprises a conductive layer over the oxide insulating layer, the conductive layer overlapping with the first gate and the first oxide semiconductor layer. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein the conductive layer is a light-transmitting conductive film formed in the same process as the first electrode layer, and wherein the conductive layer is electrically connected to the first transistor. ### Claim 3 (depends on 1) The semiconductor device according to claim 1 further comprising: a first oxide conductive layer provided between the first oxide semiconductor layer and the first source; a second oxide conductive layer provided between the first oxide semiconductor layer and the first drain; a third oxide conductive layer provided between the second oxide semiconductor layer and the second source; and a fourth oxide conductive layer provided between the second oxide semiconductor layer and the second drain. ### Claim 4 A semiconductor device comprising: a flexible substrate; a driving circuit portion over the flexible substrate, comprising: a first transistor comprising: a first gate over the flexible substrate; a gate insulating layer over the first gate; a first oxide semiconductor layer over the gate insulating layer; a first source over the first oxide semiconductor layer; a first drain over the first oxide semiconductor layer; and an oxide insulating layer over the first oxide semiconductor layer, the first source, and the first drain, at least a part of the oxide insulating layer being in contact with at least a part of the first oxide semiconductor layer between the first source and the first drain, a pixel portion over the flexible substrate, comprising: a second transistor comprising: a second gate over the flexible substrate; the gate insulating layer over the second gate; a second oxide semiconductor layer over the gate insulating layer; a second source over the second oxide semiconductor layer; a second drain over the second oxide semiconductor layer; and the oxide insulating layer over the second oxide semiconductor layer, the second source, and the second drain, at least a part of the oxide insulating layer being in contact with at least a part of the second oxide semiconductor layer between the second source and the second drain; a color filter over the oxide insulating layer; a first electrode layer over the color filter and electrically connected to the second transistor through a connection electrode layer; an EL layer over the first electrode layer; and a second electrode layer over the EL layer, wherein the first transistor comprises a conductive layer over the oxide insulating layer, the conductive layer overlapping with the first gate and the first oxide semiconductor layer. ### Claim 5 (depends on 4) The semiconductor device according to claim 4, wherein the conductive layer is a light-transmitting conductive film formed in the same process as the first electrode layer, and wherein the conductive layer is electrically connected to the first transistor. ### Claim 6 (depends on 4) The semiconductor device according to claim 4 further comprising: a first oxide conductive layer provided between the first oxide semiconductor layer and the first source; a second oxide conductive layer provided between the first oxide semiconductor layer and the first drain; a third oxide conductive layer provided between the second oxide semiconductor layer and the second source; and a fourth oxide conductive layer provided between the second oxide semiconductor layer and the second drain. ### Claim 7 (depends on 1) The semiconductor device according to claim 1, wherein at least a part of the first oxide semiconductor layer is in an oxygen-excess state, and wherein at least a part of the second oxide semiconductor layer is in an oxygen-excess state. ### Claim 8 (depends on 4) The semiconductor device according to claim 4, wherein at least a part of the first oxide semiconductor layer is in an oxygen-excess state, and wherein at least a part of the second oxide semiconductor layer is in an oxygen-excess state. ### Claim 9 (depends on 1) The semiconductor device according to claim 1, wherein the oxide insulating layer includes an excessive amount of oxygen. ### Claim 10 (depends on 4) The semiconductor device according to claim 4, wherein the oxide insulating layer includes an excessive amount of oxygen. ### Claim 11 (depends on 1) The semiconductor device according to claim 1, further comprising a flexible metal substrate over the first transistor and the second transistor, wherein the driving circuit portion and the pixel portion are sealed with the flexible metal substrate. ### Claim 12 (depends on 4) The semiconductor device according to claim 4, further comprising a flexible metal substrate over the first transistor and the second transistor, wherein the driving circuit portion and the pixel portion are sealed with the flexible metal substrate.