# US 2013/0153870 A1 · Organic light emitting display device and method of fabricating thereof

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- Number: US 2013/0153870 A1
- Document ID: US20130153870A1
- Status: Published application
- Kind: A1
- Application number: 13/706,216
- Filed: 2012-12-05
- Published: 2013-06-20
- Earliest claimed: 2011-12-14
- Assignees: LG Display Co., Ltd.
- Inventors: Hyun-Sik SEO; Jeong-Hoon LEE; Dae-Won KIM; Yong-Ho CHOI
- Web page: https://patentgrep.com/patent/US20130153870A1

## CPC

- H10K 59/38: comprising colour filters or colour changing media [CCM]
- H10K 59/126: Shielding, e.g. light-blocking means over the TFTs
- H10D 86/451: {characterised by the compositions or shapes of the interlayer dielectrics}
- H10D 86/60: wherein the TFTs are in active matrices
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

The present invention is to provide an organic light emitting display device for preventing a thin-film transistor from being deteriorated due to hydrogen when forming a light compensation layer configured to enhance viewing angle, and the organic light emitting display device may include a first substrate and a second substrate comprising a plurality of pixels; a thin-film transistor formed at each pixel of the first substrate; a color filter layer formed at each pixel; an insulating layer formed on the color filter layer; a light compensation layer formed on the insulating layer and made of a material containing no hydrogen; a pixel electrode formed on the light compensation layer of each pixel; an organic light emitting unit formed on the pixel electrode to emit light; and a common electrode formed on the organic light emitting unit.

## Claims

### Claim 1

An organic light emitting display device, comprising:
a first substrate and a second substrate comprising a plurality of pixels;
a thin-film transistor formed on the first substrate;
a first insulating layer formed on the first substrate including the thin-film transistor;
a color filter layer formed on the first insulating layer in a pixel region;
a second insulating layer formed on the first substrate including the color filter layer;
a light compensation layer formed on the second insulating layer and made of a material without hydrogen, wherein the light compensation layer comes into contact with a pad of a drain of the thin-film transistor;
a pixel electrode formed on the light compensation layer of each pixel region;
an organic light emitting unit formed on the pixel electrode to emit light; and
a common electrode formed on the organic light emitting unit.

### Claim 2 (depends on 1)

The organic light emitting display device of claim 1, further comprising:
a plurality of holes formed on the light compensation layer to discharge foreign substances, wherein the holes are formed in an outer wall of each pixel regions.

### Claim 3 (depends on 2)

The organic light emitting display device of claim 2, wherein the light compensation layer is made of a transparent material.

### Claim 4 (depends on 3)

The organic light emitting display device of claim 3, wherein the light compensation layer is formed of a material selected from a group consisting of SiNx, indium tin oxide (ITO), and indium zinc oxide (IZO).

### Claim 5 (depends on 4)

The organic light emitting display device of claim 4, wherein the SiNx is deposited with a thickness of 1500 to 2000 Å.

### Claim 6 (depends on 5)

The organic light emitting display device of claim 5, wherein the plurality of holes are formed in a region corresponding to the color filter.

### Claim 7 (depends on 5)

The organic light emitting display device of claim 5, wherein the plurality of holes are formed in a region corresponding to the color filter and within a color filter region.

### Claim 8

A method of fabricating an organic light emitting display device, the method comprising:
providing a first substrate and a second substrate comprising a plurality of pixels;
forming a thin-film transistor at each pixel of the first substrate;
forming a first insulating layer on the first substrate including the thin-film transistor;
forming a color filter layer on the first insulating layer in a pixel region;
forming a second insulating layer on the first substrate including the color filter layer;
forming a light compensation layer made of SiNx in a gas atmosphere mixed with SiH4 and N2 on the second insulating layer and made of a material without hydrogen, wherein the light compensation layer comes into contact with a pad of a drain of the thin-film transistor;
forming a pixel electrode on the light compensation layer of each pixel region;
forming an organic light emitting unit for emitting light on the light compensation layer;
forming a common electrode on the organic light emitting unit; and
bonding the first substrate to the second substrate.

### Claim 9 (depends on 8)

The method of claim 8, further comprising:
etching the light compensation layer to form a plurality of holes formed in an outer wall of each pixel regions.

### Claim 10 (depends on 9)

The method of claim 9, wherein the SiNx is transparent.

### Claim 11 (depends on 10)

The method of claim 10, further comprising:
forming a SiNx layer in a gas atmosphere mixed with SiH4 and NH3, wherein the SiNx is formed by alternatively changing the gas atmosphere mixed with SiH4 and N2 and the gas atmosphere mixed with SiH4 and HN3.

### Claim 12 (depends on 11)

The method of claim 11, wherein further comprising:
performing vacuum curing on the layers formed subsequent to forming the pixel electrode for a predetermined period of time in a vacuum state to discharge foreign substances contained in the formed layers through the holes.

### Claim 13 (depends on 8)

The method of claim 8, wherein:
the light compensation layer is made of a transparent material.

### Claim 14 (depends on 8)

The method of claim 8, wherein the light compensation layer is formed of a material selected from a group consisting of SiNx, indium tin oxide (ITO), and indium zinc oxide (IZO).

### Claim 15 (depends on 8)

The method of claim 8, wherein further comprising:
performing vacuum curing on layers formed subsequent to forming the pixel electrode for a predetermined period of time in a vacuum state to discharge foreign substances contained in the formed layers through the holes.