# US 2013/0153869 A1 · Conductive elements in organic electronic devices

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- Number: US 2013/0153869 A1
- Document ID: US20130153869A1
- Status: Published application
- Kind: A1
- Application number: 13/701,571
- Filed: 2011-06-03
- Published: 2013-06-20
- Earliest claimed: 2010-06-04
- Assignees: Plastic Logic Limited
- Inventors: Ricardo Mikalo; Anja Wellner; Jens Dienelt; Patrick Too
- Web page: https://patentgrep.com/patent/US20130153869A1

## CPC

- H10K 10/481: {characterised by the gate conductors}
- H10K 71/60: Forming conductive regions or layers, e.g. electrodes
- H10K 71/621: {Providing a shape to conductive layers, e.g. patterning or selective deposition}
- H10K 19/10: comprising field-effect transistors
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A technique comprising: forming a conductive element of an electronic device on a portion of the surface of a first organic layer, applying a second organic layer over said conductive element and said first organic layer, and then treating at least one of the first and second organic layers to increase the strength of adhesion between said first and second organic layers. Thereby the retention of said conductive element on said first organic layer is improved.

## Claims

### Claim 1

A method comprising: forming a conductive element of an electronic device on a portion of the surface of a first organic layer, applying a second organic layer over said conductive element and said first organic layer, and then treating at least one of the first and second organic layers to increase the strength of adhesion between said first and second organic layers and thereby improve the retention of said conductive element on said first organic layer.

### Claim 2 (depends on 1)

A method according to claim 1, wherein said conductive element is a metal element.

### Claim 3 (depends on 2)

A method according to claim 2, wherein forming said metal element includes patterning a deposit of metal through the direct absorption of laser energy and evaporation of metal at selected regions of said deposit.

### Claim 4 (depends on 2)

A method according to claim 2, wherein said metal is a noble metal element.

### Claim 5 (depends on 4)

A method according to claim 4, wherein said noble metal element is gold.

### Claim 6 (depends on 1)

A method according to claim 1, wherein the conductive element forms part of a conductive pattern, and wherein the density of coverage of the conductive pattern is no more than 90% for any 1 mm×1 mm unit area.

### Claim 7 (depends on 6)

A method according to claim 6, wherein the conductive element forms part of a conductive pattern, and wherein the density of coverage of the conductive pattern is no more than 50% for any 1 mm×1 mm unit area.

### Claim 8 (depends on 1)

A method according to claim 1, wherein the second organic layer exhibits better chemical barrier properties than the first organic layer.

### Claim 9 (depends on 1)

A method according to claim 1, wherein applying said second organic layer over said conductive element and said first organic layer comprises depositing a solution of an organic material in a solvent onto said conductive element and said first organic layer, wherein said solvent is compatible with said conductive element.

### Claim at position 10

10-15. (canceled)

### Claim 16

The use of a noble metal for a gate line in an organic thin-film transistor for the purpose of reducing gate-line breaks.

### Claim 17

The use of a noble metal for a gate line above a solution-processed organic gate dielectric layer having a thickness of no greater than about 300 nm.

### Claim at position 13

18-19. (canceled)