# US 2013/0153864 A1 · Ambipolar inverter device structure and manufacturing method thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2013/0153864 A1 - Document ID: US20130153864A1 - Status: Published application - Kind: A1 - Application number: 13/454,107 - Filed: 2012-04-24 - Published: 2013-06-20 - Earliest claimed: 2011-12-16 - Assignees: Industrial Technology Research Institute - Inventors: Chao-Feng Sung; Yen-Min Hsieh - Web page: https://patentgrep.com/patent/US20130153864A1 ## CPC - H10K 19/10: comprising field-effect transistors - H10K 10/486: {the channel region comprising two or more active layers, e.g. forming pn heterojunctions} - H10K 85/324: {comprising aluminium, e.g. Alq3} - H10K 85/621: {Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide} - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract An ambipolar inverter device suitable for use in an integrated circuit. An electron blocking layer and a hole blocking layer are respectively disposed at two sides of the ambipolar semiconductor layer, so that the operation of the inverter may be executed in a single device. In addition, the manufacturing method of the disclosure is simple, adopting only one patterning step, so as to effectively improve the performance of the ambipolar device. ## Claims ### Claim 1 An ambipolar inverter device structure, comprising: a gate, disposed on a substrate; two first electrodes, disposed on the substrate, and respectively located at two sides of the gate and on a first plane; two second electrodes, disposed on the substrate, and respectively located at two sides of the gate and on a second plane, wherein one of the first electrodes is electrically connected to one of the second electrodes; an ambipolar semiconductor layer, disposed between the first plane and the second plane; a first carrier blocking layer, disposed between the ambipolar semiconductor layer and each of the first electrodes; a second carrier blocking layer, disposed between the ambipolar semiconductor layer and each of the second electrodes; and a dielectric layer, disposed between the gate and each of the second electrodes. ### Claim 2 (depends on 1) The ambipolar inverter device structure according to claim 1, wherein the first electrodes and the second electrodes are located below the gate. ### Claim 3 (depends on 2) The ambipolar inverter device structure according to claim 2, wherein the first plane is lower than the second plane. ### Claim 4 (depends on 1) The ambipolar inverter device structure according to claim 1, wherein the first electrodes and the second electrodes are located above the gate. ### Claim 5 (depends on 4) The ambipolar inverter device structure according to claim 4, wherein the first plane is higher than the second plane. ### Claim 6 (depends on 1) The ambipolar inverter device structure according to claim 1, wherein the ambipolar semiconductor layer is formed by stacking an N-type organic semiconductor material and a P-type organic semiconductor material. ### Claim 7 (depends on 1) The ambipolar inverter device structure according to claim 1, wherein the ambipolar semiconductor layer is formed by mixing an N-type organic semiconductor material with a P-type organic semiconductor material. ### Claim 8 (depends on 1) The ambipolar inverter device structure according to claim 1, wherein the ambipolar semiconductor layer is made of an organic semiconductor material with an ambipolar property. ### Claim 9 (depends on 1) The ambipolar inverter device structure according to claim 1, wherein the ambipolar semiconductor layer is formed by stacking an N-type inorganic semiconductor material and a P-type inorganic semiconductor material. ### Claim 10 (depends on 1) The ambipolar inverter device structure according to claim 1, wherein when the first carrier blocking layer is an electron blocking layer, the second carrier blocking layer is a hole blocking layer; or when the first carrier blocking layer is a hole blocking layer, the second carrier blocking layer is an electron blocking layer. ### Claim 11 (depends on 1) The ambipolar inverter device structure according to claim 1, wherein when the first carrier blocking layer or the second carrier blocking layer is an electron blocking layer, the electron blocking layer is made of an inorganic material or an organic material. ### Claim 12 (depends on 11) The ambipolar inverter device structure according to claim 11, wherein the inorganic material comprises WO3, V2O5 or MoO3. ### Claim 13 (depends on 11) The ambipolar inverter device structure according to claim 11, wherein the organic material comprises 4′,4″-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA) or bis(2-methyl-8-quinolinolato-N1,O8)-(1,1′-biphenyl-4-olato) aluminum (BALq). ### Claim 14 (depends on 1) The ambipolar inverter device structure according to claim 1, wherein when the first carrier blocking layer or the second carrier blocking layer is a hole blocking layer, the hole blocking layer is made of an inorganic material or an organic material. ### Claim 15 (depends on 14) The ambipolar inverter device structure according to claim 14, wherein the inorganic material comprises LiF, CsF or TiO2. ### Claim 16 (depends on 14) The ambipolar inverter device structure according to claim 14, wherein the organic material comprises 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP). ### Claim 17 A manufacturing method of an ambipolar inverter device structure, comprising: forming two first electrodes on a substrate; forming a first carrier blocking material layer, an ambipolar semiconductor material layer and a second carrier blocking material layer on the substrate, so as to cover the first electrodes; patterning the first carrier blocking material layer, the ambipolar semiconductor material layer and the second carrier blocking material layer, so as to form a stack structure exposing a part of one of the first electrodes; forming two second electrodes on the substrate, wherein one of the first electrodes is electrically connected to one of the second electrodes; forming a dielectric layer on the substrate, so as to cover the stack structure and the second electrodes; and forming a gate on the dielectric layer between the second electrodes. ### Claim 18 (depends on 17) The manufacturing method of an ambipolar inverter device structure according to claim 17, wherein a method for forming the second electrodes on the substrate comprises: forming an electrode layer on the substrate, so as to cover the stack structure and an exposed surface of the first electrode; forming a patterned photoresist layer on the electrode layer; removing a part of the electrode layer by using the pattered photoresist layer as a mask, so as to form the second electrodes, wherein one of the second electrodes is connected to the exposed surface of the first electrode along a side wall of the stack structure; and removing the pattered photoresist layer. ### Claim 19 (depends on 17) The manufacturing method of an ambipolar inverter device structure according to claim 17, wherein methods for forming the first carrier blocking material layer and the second carrier blocking material layer respectively comprise a vapor deposition method. ### Claim 20 (depends on 17) The manufacturing method of an ambipolar inverter device structure according to claim 17, wherein a method for forming the ambipolar semiconductor material layer comprises a vapor deposition method, a coevaporation method or a solution process. ### Claim 21 (depends on 17) The manufacturing method of an ambipolar inverter device structure according to claim 17, wherein the ambipolar semiconductor material layer is formed by stacking an N-type organic semiconductor material and a P-type organic semiconductor material. ### Claim 22 (depends on 17) The manufacturing method of an ambipolar inverter device structure according to claim 17, wherein the ambipolar semiconductor material layer is formed by mixing an N-type organic semiconductor material with a P-type organic semiconductor material. ### Claim 23 (depends on 17) The manufacturing method of an ambipolar inverter device structure according to claim 17, wherein the ambipolar semiconductor material layer is made of an organic semiconductor material with an ambipolar property. ### Claim 24 (depends on 17) The manufacturing method of an ambipolar inverter device structure according to claim 17, wherein the ambipolar semiconductor material layer is formed by stacking an N-type inorganic semiconductor material and a P-type inorganic semiconductor material. ### Claim 25 (depends on 17) The manufacturing method of an ambipolar inverter device structure according to claim 17, wherein when the first carrier blocking material layer is an electron blocking material layer, the second carrier blocking material layer is a hole blocking material layer; or when the first carrier blocking material layer is a hole blocking material layer, the second carrier blocking material layer is an electron blocking material layer. ### Claim 26 (depends on 17) The manufacturing method of an ambipolar inverter device structure according to claim 17, wherein when the first carrier blocking material layer or the second carrier blocking material layer is an electron blocking material layer, the electron blocking material layer is made of an inorganic material or an organic material. ### Claim 27 (depends on 26) The manufacturing method of an ambipolar inverter device structure according to claim 26, wherein the inorganic material comprises WO3, V2O5 or MoO3. ### Claim 28 (depends on 26) The manufacturing method of an ambipolar inverter device structure according to claim 26, wherein the organic material comprises 4′,4″-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA) or bis(2-methyl-8-quinolinolato-N1,O8)-(1,1′-biphenyl-4-olato) aluminum (BALq). ### Claim 29 (depends on 17) The manufacturing method of an ambipolar inverter device structure according to claim 17, wherein when the first carrier blocking material layer or the second carrier blocking material layer is a hole blocking material layer, the hole blocking material layer is made of an inorganic material or an organic material. ### Claim 30 (depends on 29) The manufacturing method of an ambipolar inverter device structure according to claim 29, wherein the inorganic material comprises LiF, CsF or TiO2. ### Claim 31 (depends on 29) The manufacturing method of an ambipolar inverter device structure according to claim 29, wherein the organic material comprises 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP). ### Claim 32 A manufacturing method of an ambipolar inverter device structure, comprising: forming a gate on a substrate; forming a dielectric layer covering the gate on the substrate; forming two first electrodes on the dielectric layer; forming a first carrier blocking material layer, an ambipolar semiconductor material layer and a second carrier blocking material layer on the dielectric layer, so as to cover the first electrodes; patterning the first carrier blocking material layer, the ambipolar semiconductor material layer and the second carrier blocking material layer, so as to form a stack structure exposing a part of one of the first electrodes; and forming two second electrodes on the stack structure, wherein one of the first electrodes is electrically connected to one of the second electrodes. ### Claim 33 (depends on 32) The manufacturing method of an ambipolar inverter device structure according to claim 32, wherein a method for forming the second electrodes on the substrate comprises: forming an electrode layer on the substrate, so as to cover the stack structure and an exposed surface of the first electrode; forming a patterned photoresist layer on the electrode layer; removing a part of the electrode layer by using the pattered photoresist layer as a mask, so as to form the second electrodes, wherein one of the second electrodes is connected to the exposed surface of the first electrode along a side wall of the stack structure; and removing the pattered photoresist layer. ### Claim 34 (depends on 32) The manufacturing method of an ambipolar inverter device structure according to claim 32, wherein methods for forming the first carrier blocking material layer and the second carrier blocking material layer respectively comprise a vapor deposition method. ### Claim 35 (depends on 32) The manufacturing method of an ambipolar inverter device structure according to claim 32, wherein a method for forming the ambipolar semiconductor material layer comprises a vapor deposition method, a coevaporation method or a solution process. ### Claim 36 (depends on 32) The manufacturing method of an ambipolar inverter device structure according to claim 32, wherein the ambipolar semiconductor material layer is formed by stacking an N-type organic semiconductor material and a P-type organic semiconductor material. ### Claim 37 (depends on 32) The manufacturing method of an ambipolar inverter device structure according to claim 32, wherein the ambipolar semiconductor material layer is formed by mixing an N-type organic semiconductor material with a P-type organic semiconductor material. ### Claim 38 (depends on 32) The manufacturing method of an ambipolar inverter device structure according to claim 32, wherein the ambipolar semiconductor material layer is made of an organic semiconductor material with an ambipolar property. ### Claim 39 (depends on 32) The manufacturing method of an ambipolar inverter device structure according to claim 32, wherein the ambipolar semiconductor material layer is formed by stacking an N-type inorganic semiconductor material and a P-type inorganic semiconductor material. ### Claim 40 (depends on 32) The manufacturing method of an ambipolar inverter device structure according to claim 32, wherein when the first carrier blocking material layer is an electron blocking material layer, the second carrier blocking material layer is a hole blocking material layer; or when the first carrier blocking material layer is a hole blocking material layer, the second carrier blocking material layer is an electron blocking material layer. ### Claim 41 (depends on 32) The manufacturing method of an ambipolar inverter device structure according to claim 32, wherein when the first carrier blocking material layer or the second carrier blocking material layer is an electron blocking material layer, the electron blocking material layer is made of an inorganic material or an organic material. ### Claim 42 (depends on 41) The manufacturing method of an ambipolar inverter device structure according to claim 41, wherein the inorganic material comprises WO3, V2O5 or MoO3. ### Claim 43 (depends on 41) The manufacturing method of an ambipolar inverter device structure according to claim 41, wherein the organic material comprises 4′,4″-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA) or bis(2-methyl-8-quinolinolato-N1,O8)-(1,1′-biphenyl-4-olato) aluminum (BALq). ### Claim 44 (depends on 32) The manufacturing method of an ambipolar inverter device structure according to claim 32, wherein when the first carrier blocking material layer or the second carrier blocking material layer is a hole blocking material layer, the hole blocking material layer is made of an inorganic material or an organic material. ### Claim 45 (depends on 44) The manufacturing method of an ambipolar inverter device structure according to claim 44, wherein the inorganic material comprises LiF, CsF or TiO2. ### Claim 46 (depends on 44) The manufacturing method of an ambipolar inverter device structure according to claim 44, wherein the organic material comprises 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP).