# US 2013/0153860 A1 · Method of forming hybrid nanostructure on graphene, hybrid nanostructure, and device including the hybrid nanostructure

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2013/0153860 A1
- Document ID: US20130153860A1
- Status: Published application
- Kind: A1
- Application number: 13/710,549
- Filed: 2012-12-11
- Published: 2013-06-20
- Earliest claimed: 2011-12-16
- Assignees: Samsung Electronics Co., Ltd.
- Inventors: Sang-woo KIM; Hyun-kyu PARK
- Web page: https://patentgrep.com/patent/US20130153860A1

## CPC

- H10K 71/10: Deposition of organic active material
- B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- B82Y 30/00: Nanotechnology for materials or surface science, e.g. nanocomposites
- B82Y 40/00: Manufacture or treatment of nanostructures
- C01B 32/186: by chemical vapour deposition [CVD]
- C01B 32/194: After-treatment
- H10D 62/122: {oriented at angles to substrates, e.g. perpendicular to substrates}
- H10D 62/882: {Graphene}
- H10D 64/205: {Nanosized electrodes, e.g. nanowire electrodes}
- H10F 71/138: {Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes}
- H10P 14/24: using chemical vapour deposition [CVD]
- H10P 14/274: {using seed materials}
- H10P 14/279: {Vapour-liquid-solid growth}
- H10P 14/2901: {Materials}
- H10P 14/3206: {Carbon, e.g. diamond-like carbon}
- H10P 14/3241: {being conductive materials}
- H10P 14/3248: {consisting of two layers}
- H10P 14/3402: {characterised by the chemical composition}
- H10P 14/3426: {Oxides}
- H10P 14/3452: {Microstructure}
- H10P 14/3462: {Nanowires}
- Y02E 10/50: Photovoltaic [PV] energy
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

A method of forming a hybrid nanostructure on graphene, the method including providing a graphene layer on a substrate; forming a metal layer on the graphene layer; and chemically depositing a nanomaterial on the graphene layer on which the metal layer is formed to form the hybrid nanostructure.

## Claims

### Claim 1

A method of forming a hybrid nanostructure on graphene, the method comprising:
providing a graphene layer on a substrate;
forming a metal layer on the graphene layer; and
chemically depositing a nanomaterial on the graphene layer on which the metal layer is formed to form the hybrid nanostructure.

### Claim 2 (depends on 1)

The method of claim 1, wherein the forming of the graphene layer comprises:
growing the graphene layer on a catalyst layer via chemical deposition;
removing the catalyst layer from the graphene layer; and
transferring the graphene layer to the substrate.

### Claim 3 (depends on 1)

The method of claim 1, wherein a thickness of the metal layer is from about 0.5 nanometers to about 5 nanometers.

### Claim 4 (depends on 1)

The method of claim 1, wherein the metal layer consists of gold.

### Claim 5 (depends on 1)

The method of claim 1, wherein the nanomaterial is chemically deposited for about 30 minutes to about 2 hours at about 800 to about 950° C.

### Claim 6 (depends on 1)

The method of claim 1, wherein a thickness of the formed metal layer is effective to selectively grow a nanowall or a nanowire.

### Claim 7 (depends on 1)

The method of claim 1, wherein the nanomaterial is a Group IV semiconductor, a Group III-V semiconductor, a Group II-VI semiconductor, a Group IV-VI semiconductor, a Group IV-V-VI semiconductor, an oxide semiconductor, a nitride semiconductor, a metal, or a combination thereof.

### Claim 8 (depends on 1)

The method of claim 1, wherein the hybrid nanostructure comprises a nanowall, a combination of a nanowall and a nanowire, and a nanowire in the stated order from the graphene layer.

### Claim 9 (depends on 1)

The method of claim 1, wherein a structure of the metal layer is converted to an island structure when the nanomaterial is chemically deposited.

### Claim 10

A composite nanostructure comprising:
a substrate;
a graphene layer formed on the substrate; and
a hybrid nanostructure formed on the graphene layer and comprising a combination of a nanowall and a nanowire.

### Claim 11 (depends on 10)

The composite nanostructure of claim 10, further comprising a metal layer between the graphene layer and the nanostructure, wherein the metal layer has an island structure.

### Claim 12 (depends on 11)

The composite nanostructure of claim 11, wherein the metal layer consists of gold.

### Claim 13 (depends on 10)

The composite nanostructure of claim 10, wherein the hybrid nanostructure comprises a nanowall, a combination of a nanowall and a nanowire, and a nanowire in the stated order from the substrate.

### Claim 14 (depends on 10)

The composite nanostructure of claim 10, wherein the substrate is transparent and comprises polyethylene naphthalate, silicon oxide, aluminum oxide, or a combination thereof.

### Claim 15 (depends on 10)

A nanoelectronic device comprising the composite nanostructure according to claim 10.

### Claim 16 (depends on 15)

The nanoelectronic device of claim 15, further comprising a counter electrode layer spaced apart from the hybrid nanostructure.

### Claim 17 (depends on 16)

The nanoelectronic device of claim 16, wherein the counter electrode layer comprises graphene, indium tin oxide, gold, platinum, indium zinc tin oxide, or combination thereof.

### Claim 18 (depends on 15)

The nanoelectronic device of claim 15, wherein the nanoelectronic device is a direct current nanogenerator.

### Claim 19

A hybrid nanostructure comprising:
a nanowall; and
a nanowire abutting the nanowall,
wherein the nanowall and the nanowire comprise a Group IV semiconductor, a Group III-V semiconductor, a Group II-VI semiconductor, a Group IV-VI semiconductor, a Group IV-V-VI semiconductor, an oxide semiconductor, a nitride semiconductor, or a combination thereof; and
wherein a thickness of the nanowall is about 5 to about 100 nm and a diameter of the nanowire is about 5 to about 100 nm.

### Claim 20 (depends on 19)

The hybrid nanostructure of claim 19, further comprising a combination of a nanowall and a nanowire between both the nanowall and the nanowire, wherein the combination comprises a Group IV semiconductor, a Group III-V semiconductor, a Group II-VI semiconductor, a Group IV-VI semiconductor, a Group IV-V-VI semiconductor, an oxide semiconductor, a nitride semiconductor, or a combination thereof.

### Claim 21 (depends on 19)

The hybrid nanostructure of claim 19, wherein the nanowall has a height of about 1 to about 100 μm, the nanowire has a length of about 1 to about 100 μm, and a direction of the height of the nanowall and a direction of the length of the nanowire are parallel.