# US 2013/0153850 A1 · Nonvolatile memory device and method for manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2013/0153850 A1 - Document ID: US20130153850A1 - Status: Published application - Kind: A1 - Application number: 13/715,180 - Filed: 2012-12-14 - Published: 2013-06-20 - Earliest claimed: 2011-12-20 - Assignees: Kabushiki Kaisha Toshiba - Inventors: Hidehiko Yabuhara; Takashi Hirotani; Junji Kataoka; Hisashi Kameoka - Web page: https://patentgrep.com/patent/US20130153850A1 ## CPC - H10N 70/021: {Formation of switching materials, e.g. deposition of layers} - H10N 70/063: {by etching of pre-deposited switching material layers, e.g. lithography} - H10N 70/245: {the species being metal cations, e.g. programmable metallization cells} - H10N 70/801: {Constructional details of multistable switching devices} - H10N 70/826: {adapted for essentially vertical current flow, e.g. sandwich or pillar type devices} - H10N 70/883: {Oxides or nitrides} - H10N 70/884: {based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors (compounds of sulfur, selenium or tellurium, e.g. chalcogenides H10N70/882; oxides or nitrides H10N70/883)} - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR ## Abstract According to one embodiment, a nonvolatile memory device includes a first electrode, a second electrode, and a memory cell provided between the first electrode and the second electrode. The memory cell includes a retention unit, a resistance change unit, and an ion supply unit. The retention unit is provided on the first electrode and has an electron trap. The resistance change unit is provided on the retention unit. The ion supply unit is provided between the resistance change unit and the second electrode and includes a metal element. ## Claims ### Claim 1 A nonvolatile memory device comprising a first electrode, a second electrode, and a memory cell provided between the first electrode and the second electrode, the memory cell including: a retention unit provided on the first electrode and having an electron trap; a resistance change unit provided on the retention unit; and an ion supply unit provided between the resistance change unit and the second electrode and including a metal element. ### Claim 2 (depends on 1) The device according to claim 1, wherein the retention unit includes a metal oxide having the electron trap. ### Claim 3 (depends on 1) The device according to claim 1, wherein the retention unit includes at least one selected from the group consisting of hafnium oxide (HfOx), silicon oxynitride (SiOxNy), aluminum oxide (AlxOy), lanthanum oxide (LaxOy), tantalum oxide (TaxOy), strontium oxide (SrxOy), yttrium oxide (YxOy), barium oxide (BaxOy), and zinc oxide (ZnxOy). ### Claim 4 (depends on 1) The device according to claim 1, wherein an electron trap density of the retention unit is 1×1011/cm3 or more. ### Claim 5 (depends on 1) The device according to claim 1, wherein an electron trap density of the retention unit is 1×1013/cm3 or less. ### Claim 6 (depends on 1) The device according to claim 1, wherein the retention unit includes a plurality of layers stacked. ### Claim 7 (depends on 1) The device according to claim 1, wherein the retention unit includes: a layer including silicon oxide (SiOx); and a layer including at least one selected from the group consisting of hafnium oxide (HfOx), silicon oxynitride (SiOxNy), aluminum oxide (AlxOy), lanthanum oxide (LaxOy), tantalum oxide (TaxOy), strontium oxide (SrxOy), yttrium oxide (YxOy), barium oxide (BaxOy), and zinc oxide (ZnxOy). ### Claim 8 (depends on 1) The device according to claim 1, wherein a dielectric constant of the retention unit is higher than a dielectric constant of the resistance change unit. ### Claim 9 (depends on 1) The device according to claim 1, wherein the retention unit includes at least one selected from the group consisting of a metal oxide having a higher dielectric constant than silicon oxide, a metal nitride having a higher dielectric constant than silicon oxide, and a mixture of a metal oxide and a metal nitride having a higher dielectric constant than silicon oxide. ### Claim 10 (depends on 1) The device according to claim 1, wherein the retention unit includes a plurality of layers stacked and the plurality of layers each include at least one of mutually different ones selected from the group consisting of a metal oxide having a higher dielectric constant than silicon oxide, a metal nitride having a higher dielectric constant than silicon oxide, and a mixture of a metal oxide and a metal nitride having a higher dielectric constant than silicon oxide. ### Claim 11 (depends on 1) The device according to claim 1, wherein the ion supply unit includes at least one selected from the group consisting of silver, copper, cobalt, nickel, aluminum, and titanium. ### Claim 12 (depends on 1) The device according to claim 1, wherein the resistance change unit includes at least one of amorphous silicon and silicon oxide. ### Claim 13 (depends on 1) The device according to claim 1, wherein the ion supply unit forms a conduction path in the resistance change unit and the retention unit traps an electron moving from the conduction path toward the first electrode side. ### Claim 14 (depends on 13) The device according to claim 13, wherein the retention unit includes a plurality of layers stacked and the retention unit traps an electron moving from the conduction path toward the first electrode side in the plurality of layers and at an interface between adjacent ones of the plurality of layers. ### Claim 15 (depends on 1) The device according to claim 1, wherein the memory cell is provided to be stacked in plural. ### Claim 16 A method for manufacturing a nonvolatile memory device including a first electrode, a second electrode, and a memory cell provided between the first electrode and the second electrode comprising: forming a film that forms a retention unit on a film that forms the first electrode; forming a film that forms a resistance change unit on the film that forms the retention unit; and forming a film that forms an ion supply unit on the film that forms the resistance change unit, ion implantation being performed to form an electron trap in the forming a film that forms the retention unit. ### Claim 17 (depends on 16) The method according to claim 16, wherein a density of the electron trap is controlled in performing the ion implantation and an electron trap density of the retention unit is made 1×1011/cm3 or more. ### Claim 18 (depends on 16) The method according to claim 16, wherein a density of the electron trap is controlled in performing the ion implantation and an electron trap density of the retention unit is made 1×1013/cm3 or less. ### Claim 19 (depends on 16) The method according to claim 16, wherein an oxygen ion is implanted in performing the ion implantation. ### Claim 20 (depends on 16) The method according to claim 16, wherein in the forming a film that forms the retention unit, the film including at least one selected from the group consisting of hafnium oxide (HfOx), silicon oxynitride (SiOxNy), aluminum oxide (AlxOy), lanthanum oxide (LaxOy), tantalum oxide (TaxOy), strontium oxide (SrxOy), yttrium oxide (YxOy), barium oxide (BaxOy), and zinc oxide (ZnxOy) is formed.