# US 2013/0153779 A1 · Dose measurement device for plasma-immersion ion implantation > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2013/0153779 A1 - Document ID: US20130153779A1 - Status: Published application - Kind: A1 - Application number: 13/701,291 - Filed: 2011-06-01 - Published: 2013-06-20 - Earliest claimed: 2010-06-03 - Assignees: Ion Beam Services - Inventors: Frank Torregrosa; Laurent Roux - Web page: https://patentgrep.com/patent/US20130153779A1 ## CPC - G01T 1/02: Dosimeters (G01T1/15 takes precedence) - H01J 37/244: Detectors; Associated components or circuits therefor - H01J 37/32412: {Plasma immersion ion implantation} - H01J 37/32422: {Arrangement for selecting ions or species in the plasma} - H01J 37/32935: {Monitoring and controlling tubes by information coming from the object and/or discharge} - H01J 2237/24405: Faraday cages - H01J 2237/2448: Secondary particle detectors - H01J 2237/31703: Dosimetry - G01T: MEASUREMENT OF NUCLEAR OR X-RADIATION (radiation analysis of materials, mass spectrometry G01N23/00; tubes for determining the presence, intensity, density or energy of radiation or particles H01J47/00) - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract The present invention relates to a dose-measurement device for ion implantation, the device comprising a module CUR for estimating implantation current, a secondary electron detector DSE, and a control circuit CC for estimating the ion current by taking the difference between said implantation current and the current from said secondary electron detector. Furthermore, said high-energy secondary electron detector comprises a collector COL, P supporting exactly three mutually insulated electrodes: a first repulsion electrode G1, A1, T1 for repelling charges of a predetermined sign that are to be repelled, said electrode being provided with at least one orifice for passing electrons; a second repulsion electrode G2, A2, T2 for repelling charges of the opposite sign that are to be repelled, said electrode also being provided with at least one orifice for passing electrons; and a selection electrode G3, A3, T3, this electrode also being provided with at least one orifice for passing electrons. ## Claims ### Claim 1 A dose-measurement device for ion implantation, the device comprising a module (CUR) for estimating implantation current, a secondary electron detector (DSE), and a control circuit (CC) for estimating the ion current by taking the difference between said implantation current and the current from said secondary electron detector, the device being characterized in that said high-energy secondary electron detector comprises a collector (COL, P) supporting exactly three mutually insulated electrodes: a first repulsion electrode (G1, A1, T1) for repelling charges of a predetermined sign that are to be repelled, said electrode being provided with at least one orifice for passing electrons; a second repulsion electrode (G2, A2, T2) for repelling charges of the opposite sign that are to be repelled, said electrode also being provided with at least one orifice for passing electrons; and a selection electrode (G3, A3, T3), this electrode also being provided with at least one orifice for passing electrons. ### Claim 2 (depends on 1) A device according to claim 1, characterized in that the orifices in said electrodes are in alignment on a conduction cylinder (D) that forms an opening of said electron detector (DSE). ### Claim 3 (depends on 1) A device according to claim 1, characterized in that said collector (COL) is in the form of a cup. ### Claim 4 (depends on 1) A device according to claim 1, characterized in that said electrodes (G1-A1-T1, G2-A2-T2, G3-A3-T3) are made of aluminum. ### Claim 5 (depends on 1) A device according to claim 1, characterized in that the spacing between two consecutive electrodes (G1-G2, G2-G3) lies in the range 6 mm to 10 mm. ### Claim 6 (depends on 1) A device according to claim 1, characterized in that the openings in said electrodes (G1-A1-T1, G2-A2-T2, G3-A3-T3) present an area lying in the range 15 mm2 to 30 mm2. ### Claim 7 (depends on 1) A device according to claim 1, characterized in that said electrodes are constituted by grids (G1, G2, G3). ### Claim 8 (depends on 7) A device according to claim 7, characterized in that the transparency of said grids (G1, G2, G3) is greater than 50%. ### Claim 9 (depends on 7) A device according to claim 7, characterized in that the distance between two consecutive grids is written h, the diameter of the orifices in said grids is written D, and the ratio written h/D is greater than 1. ### Claim 10 (depends on 1) A device according to claim 1, characterized in that said electrodes are constituted by rings (A1-T1, A2-T2, A3-T3). ### Claim 11 (depends on 10) A device according to claim 10, characterized in that the distance between two consecutive rings is written h, the diameter of said conduction cylinder is written D, and the ratio written h/D is greater than 1. ### Claim 12 (depends on 1) A device according to claim 1, characterized in that it also includes a spectrometer (SPC) for estimating the proportion of a predetermined species of ion, said control circuit (CC) including means for applying said proportion to said ion current.) ### Claim 13 (depends on 1) A device according to claim 1, characterized in that it includes at least one additional secondary electron detector.